公开(公告)号：US20110049383A1

公开(公告)日：2011-03-03

申请号：US12553946

申请日：2009-09-03

Applicant: ZHIMIN WAN ,  JOHN D. POLLOCK ,  DON BERRIAN

Inventor： ZHIMIN WAN ,  JOHN D. POLLOCK ,  DON BERRIAN

IPC: C23C14/48 ,  H01J27/02

CPC classification number: C23C14/48 ,  C23C14/04 ,  C23C14/50 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/30488

Abstract: An ion implanter and an ion implant method for achieving a two-dimensional implantation on a wafer are disclosed. The ion implanter includes an ion source, a mass analyzer, a wafer driving mechanism, an aperture mechanism, and an aperture driving mechanism. The ion source and the mass analyzer are capable of providing an ion beam. The wafer driving mechanism is configured to drive a wafer along only a first direction. The aperture mechanism has an aperture for filtering the ion beam before the wafer is implanted. The aperture driving mechanism is configured to drive the aperture along a second direction intersecting the first direction. By moving the wafer and the aperture along different directions separately, the projection of the ion beam can achieve a two-dimensional implantation on the wafer. Here, at least one of the directions is optionally parallel to the longer dimension of the two-dimensional cross-section of the ion beam.

Abstract translation: 公开了一种用于在晶片上实现二维注入的离子注入机和离子注入方法。 离子注入机包括离子源，质量分析器，晶片驱动机构，孔径机构和孔径驱动机构。 离子源和质量分析仪能够提供离子束。 晶片驱动机构构造成仅沿第一方向驱动晶片。 光圈机构具有用于在晶片植入之前对离子束进行过滤的孔。 孔径驱动机构构造成沿着与第一方向相交的第二方向驱动孔。 通过分别沿不同方向移动晶片和孔，离子束的投影可以在晶片上实现二维注入。 这里，至少一个方向可选地平行于离子束的二维横截面的较长尺寸。

公开(公告)号：US20120115318A1

公开(公告)日：2012-05-10

申请号：US13351334

申请日：2012-01-17

Applicant: JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

Inventor： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC: H01L21/265

CPC classification number: C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

Abstract translation: 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始植入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US20110244669A1

公开(公告)日：2011-10-06

申请号：US12750983

申请日：2010-03-31

Applicant: JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

Inventor： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC: H01L21/265

CPC classification number: C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

Abstract translation: 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始植入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US20110229987A1

公开(公告)日：2011-09-22

申请号：US12727573

申请日：2010-03-19

Applicant: JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

Inventor： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC: H01L21/66 ,  H01L21/265

CPC classification number: H01L21/265 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/67248 ,  Y10S438/905

Abstract: Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.

Abstract translation: 提供了低温离子注入技术，以提高产量。 具体地说，在植入过程开始之前，背面气体的压力可以暂时地，持续地或连续增加，使得晶片可以从室温快速冷却到基本等于规定的植入温度。 此外，在真空排气过程之后，晶片可以在晶片移出离子注入机之前在加载锁定室中等待额外的时间，以便允许晶片温度快速达到更高的温度以使晶片上的水冷凝最小化 表面。 此外，为了在晶片温度变化期间精确地监视晶片温度，可以使用非接触型温度测量装置以最小化的冷凝实时监测晶片温度。

公开(公告)号：US20120019257A1

公开(公告)日：2012-01-26

申请号：US12841833

申请日：2010-07-22

Applicant: PETER M. KOPALIDIS ,  ZHIMIN WAN

Inventor： PETER M. KOPALIDIS ,  ZHIMIN WAN

IPC: G01N27/62

CPC classification number: G01N27/404

Abstract: Techniques for ion beam current measurement, especially for measuring low energy ion beam current, are disclosed. In one exemplary embodiment, the techniques may be realized as an ion beam current measurement apparatus has at least a planar Faraday cup and a magnet device. The planar Faraday cup is close to an inner surface of a chamber wall, and may be non-parallel to or parallel to the inner surface. The magnet device is located close to the planar Faraday cup. Therefore, by properly adjusting the magnetic field, secondary electrons, incoming electrons and low energy ions may be adequately suppressed. Further, the planar Faraday cup may surround an opening of an additional Faraday cup being any conventional Faraday cup. Therefore, the whole ion beam may be received and measured well by the larger cross-section area of at least the planar Faraday cup on the ion beam path.

Abstract translation: 公开了用于离子束电流测量的技术，特别是用于测量低能量离子束电流。 在一个示例性实施例中，可以实现这些技术，因为离子束电流测量装置至少具有平面的法拉第杯和磁体装置。 平面法拉第杯靠近腔壁的内表面，并且可以不平行于或平行于内表面。 磁铁装置靠近平面法拉第杯。 因此，通过适当地调整磁场，可以适当地抑制二次电子，入射电子和低能离子。 此外，平面法拉第杯可以围绕任何常规法拉第杯的附加法拉第杯的开口。 因此，可以通过离子束路径上的至少平面法拉第杯的较大横截面面积良好地接收和测量整个离子束。

公开(公告)号：US20130001433A1

公开(公告)日：2013-01-03

申请号：US13608941

申请日：2012-09-10

Applicant: Wei-Cheng LIN ,  ZHIMIN WAN

Inventor： Wei-Cheng LIN ,  ZHIMIN WAN

IPC: G21K5/04 ,  G21K5/10 ,  G21K5/00

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30472

Abstract: The invention provides a method to real time monitor the ion beam. Initially, turn on an ion implanter which has a wafer holder, a Faraday cup and a measurement device positioned close to a special portion of a pre-determined ion beam path of the ion beam, wherein the Faraday cup is positioned downstream the wafer holder and the measurement device is positioned upstream the wafer holder. Then, measure a first ion beam current received by the Faraday cup and a second ion beam current received by the measurement device. By continuously measuring the first and second ion beam current, the ion beam is real-time monitored even the Faraday cup is at least partially blocked during the period of moving the wafer holder across the ion beam. Accordingly, the on-going implantation process and the operation of the implanter can be adjusted.

Abstract translation: 本发明提供了一种实时监测离子束的方法。 最初，打开一个离子注入机，该离子注入机具有晶片保持器，法拉第杯和靠近离子束预定离子束路径的特殊部分的测量装置，其中法拉第杯位于晶片保持器的下游， 测量装置位于晶片保持器的上游。 然后，测量由法拉第杯接收的第一离子束电流和由测量装置接收的第二离子束电流。 通过连续地测量第一和第二离子束电流，即使在移动晶片夹持器穿过离子束的时段期间，即使法拉第杯至少部分被阻挡，离子束也被实时监测。 因此，可以调整正在进行的植入过程和注入机的操作。

公开(公告)号：US20120187290A1

公开(公告)日：2012-07-26

申请号：US13012759

申请日：2011-01-24

Applicant: KO-CHUAN JEN ,  ZHIMIN WAN

Inventor： KO-CHUAN JEN ,  ZHIMIN WAN

IPC: H01J49/30

CPC classification number: H01J37/3171 ,  H01J37/141 ,  H01J2237/24542

Abstract: Apparatus and method for adjusting an ion beam between a mass analyzer and a substrate holder. Herein, one or more bended, such as arch-shaped, curved or zigzag shaped, bar magnets are configured to apply one or more magnetic fields to adjust the shape or cross section of an ion beam passing through a space partially surrounded by the one or more bended bar magnets. At least one of the gap width between neighbor bended bar magnets, the curvature of each bended bar magnet and the current flowing through each bended bar magnet may be fixed or adjusted dependently or independently. Therefore, the Lorentz force applied on the ion beam along different directions may be changed in a desired manner, and then the ion beam may be flexibly elongated, compressed or shaped to meet the process requirement.

Abstract translation: 用于调整质量分析器和衬底保持器之间的离子束的装置和方法。 这里，一个或多个弯曲的，例如拱形，弯曲或锯齿形的棒状磁体被构造成施加一个或多个磁场以调节通过部分地围绕一个或多个磁体的空间的离子束的形状或横截面， 更弯曲的酒吧磁铁。 相邻的弯曲棒状磁体之间的间隙宽度中的至少一个，每个弯曲棒状磁体的曲率和流过每个弯曲磁体的磁体的电流可以相关地或独立地被固定或调节。 因此，沿着不同方向施加在离子束上的洛伦兹力可以以期望的方式改变，然后离子束可以灵活地伸长，压缩或成形以满足工艺要求。