摘要:
A heating assembly (36) for heating a cathode (38) of an electron gun (30) of an exposure apparatus (10) includes a radiation source (42) and a beam shaper (44). The radiation source (42) generates a source beam (46). The beam shaper (44) receives the source beam (46) and selectively shapes the source beam (46) into a shaped beam (48) that is directed to the cathode (38). In certain embodiments, the beam shaper (44) can readily change the shape and intensity profile of the shaped beam (48) to achieve a desired electron beam (32) from the electron gun (30). In one embodiment, the radiation source (42) generates a pulsed source beam (46).
摘要:
An ion source device includes an ion source having a filament for emitting thermoelectrons, a current measuring device for measuring current flowing through the filament, a voltage measuring device for measuring voltage across the filament, a resistance operation device for computing a resistance value of the filament by using the current and the voltage measured by the current and voltage measuring devices, and a prediction operation device for computing a time till the application limits of the filament or a time left till the application limits of the filament.
摘要:
An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an ExB separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample. When the sample is evaluated, a direction in which the stage is moved is corrected to align with the direction in which the dies are arranged.
摘要:
An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an ExB separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample. When the sample is evaluated, a direction in which the stage is moved is corrected to align with the direction in which the dies are arranged.
摘要:
The invention provides an ion source structure of an ion implanter, which comprises an arc chamber, a filament in the arc chamber, and a cathode in the arc chamber, wherein the cathode has an upper surface and a lower surface, and at least one of the upper surface and the lower surface is non-planar.
摘要:
One or more examples relate, generally, to an apparatus. The apparatus includes a charged particle source and a charged particle pointer. The charged particle pointer urges charged particles emitted by the charged particle source in a predetermined direction. The charged particle pointer comprises a repeller, and an isolator positioned along a path extending from the repeller in the predetermined direction.
摘要:
Sterilization device, in particular for sterilization of packaging material, comprising a first chamber, a barrier element and a connection area. The first chamber is adapted to provide charge carriers for sterilization, and the connection area is connected to a third chamber so that the barrier element forms at least one part of the boundary of a volume in which a first atmosphere exists.
摘要:
A heating assembly (36) for heating a cathode (38) of an electron gun (30) of an exposure apparatus (10) includes a radiation source (42) and a beam shaper (44). The radiation source (42) generates a source beam (46). The beam shaper (44) receives the source beam (46) and selectively shapes the source beam (46) into a shaped beam (48) that is directed to the cathode (38). In certain embodiments, the beam shaper (44) can readily change the shape and intensity profile of the shaped beam (48) to achieve a desired electron beam (32) from the electron gun (30). In one embodiment, the radiation source (42) generates a pulsed source beam (46).
摘要:
An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an E×B separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample. When the sample is evaluated, a direction in which the stage is moved is corrected to align with the direction in which the dies are arranged.
摘要:
The invention provides an ion source structure of an ion implanter, which comprises an arc chamber, a filament in the arc chamber, and a cathode in the arc chamber, wherein the cathode has an upper surface and a lower surface, and at least one of the upper surface and the lower surface is non-planar.