Charged-particle-beam optical systems including beam tube exhibiting reduced eddy currents
    1.
    发明申请
    Charged-particle-beam optical systems including beam tube exhibiting reduced eddy currents 审中-公开
    带电粒子束光学系统包括显示减小的涡流的束管

    公开(公告)号:US20010051317A1

    公开(公告)日:2001-12-13

    申请号:US09875330

    申请日:2001-06-05

    Inventor: Katsushi Nakano

    CPC classification number: H01J37/09 H01J2237/0209

    Abstract: Charged-particle-beam (CPB) optical systems are disclosed that exhibit reduced eddy currents forming in the beam tube of the system. The eddy currents otherwise would degrade beam-control response time of the system. In an embodiment, the beam tube defines at least one slit in an nulleddy-current zonenull of the beam tube adjacent an energizable coil of the system, such as a deflector coil. The slit(s) is situated so as to divide the eddy-current zone. The slit(s) extends at least part way through the thickness dimension of the beam tube and can be formed using conventional machine tools, wire cutting, or electrical-discharge machining, or other suitable technique. Compared to an eddy-current zone lacking a slit, the divided eddy-current zones produced by the slit(s) have substantially reduced overall area, thereby reducing eddy current in the beam tube and allowing a corresponding increase in beam-control speed.

    Abstract translation: 公开了带电粒子束(CPB)光学系统,其在系统的光束管中形成减小的涡流。 否则涡流会降低系统的波束控制响应时间。 在一个实施例中,光束管在光束管的“涡流区”中限定了与系统的可激励线圈相邻的至少一个狭缝,例如偏转线圈。 狭缝位于以便划分涡流区。 狭缝至少部分延伸穿过梁管的厚度尺寸,并且可以使用常规的机床,线切割或放电加工或其他合适的技术形成。 与没有狭缝的涡流区相比,由狭缝产生的分开的涡流区具有大大减小的总面积,从而减小射束管中的涡流,并允许波束控制速度的相应增加。

    MOUNTING STAGE AND PLASMA PROCESSING APPARATUS
    2.
    发明申请
    MOUNTING STAGE AND PLASMA PROCESSING APPARATUS 审中-公开
    安装阶段和等离子体加工设备

    公开(公告)号:US20090199967A1

    公开(公告)日:2009-08-13

    申请号:US12365385

    申请日:2009-02-04

    Abstract: A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition: δ/z≧85 where δ=(ρv/(μπf))1/2 where z is the thickness of the electrode film, δ is the skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is the frequency of the radio-frequency electrical power, π is the ratio of a circumference of a circle to its diameter, μ is the magnetic permeability of the electrode film, and ρv is the specific resistance of the electrode film.

    Abstract translation: 一种等离子体处理装置的安装平台,其能够防止基板上的半导体装置中的绝缘膜的劣化。 导体构件连接到用于产生等离子体的射频电源。 电介质层埋在导体部件的上表面的中心部分。 静电卡盘安装在电介质层上。 静电吸盘具有满足以下条件的电极膜:<?in-line-formula description =“In-line formula”end =“lead”?> delta / z> = 85 <?in-line-formula description = “直线公式”end =“tail”?>其中delta =(rhov /(mupif))1/2其中z是电极膜的厚度,delta是电极膜相对于放射线的厚度, f是射频电力的频率,pi是圆周长与其直径的比率,μ是电极膜的导磁率,rhov 是电极膜的电阻率。

    Electron microscope and method of adjusting the same
    4.
    发明授权
    Electron microscope and method of adjusting the same 有权
    电子显微镜及其调整方法

    公开(公告)号:US08859964B2

    公开(公告)日:2014-10-14

    申请号:US13915725

    申请日:2013-06-12

    Applicant: JEOL Ltd.

    Inventor: Yuji Kohno

    Abstract: An electron microscope is offered which has a detector and a noise canceling circuit whose offset can be easily adjusted if any information about the offset of the detector is not available. Also, a method of adjusting this microscope is offered. The method of adjusting the electron microscope (1) starts with measuring the output voltage from a preamplifier (20) at given timing while blocking the electron beam transmitted through a sample (14) from hitting the detector (15) (step S140). An offset voltage to be set into the noise canceling circuit (30) is calculated based on the measured output voltage from the preamplifier (20) (step S150). The calculated offset voltage is set into the noise canceling circuit (30) (step S160).

    Abstract translation: 提供具有检测器和噪声消除电路的电子显微镜,如果没有关于检测器的偏移的信息不可用,则可以容易地调整其偏移。 此外,还提供了一种调整该显微镜的方法。 调整电子显微镜(1)的方法从在给定时刻测量来自前置放大器(20)的输出电压开始,同时阻挡透过样品(14)的电子束撞击检测器(15)(步骤S140)。 基于来自前置放大器(20)的测量输出电压计算要设置到噪声消除电路(30)中的偏移电压(步骤S150)。 将计算出的偏移电压设定在噪声消除电路(30)中(步骤S160)。

    Magnetic object lens for an electron beam exposure apparatus which
processes a wafer carried on a continuously moving stage
    5.
    发明授权
    Magnetic object lens for an electron beam exposure apparatus which processes a wafer carried on a continuously moving stage 失效
    用于处理在连续移动台上承载的晶片的电子束曝光装置的磁性物镜

    公开(公告)号:US4929838A

    公开(公告)日:1990-05-29

    申请号:US310347

    申请日:1989-02-14

    Abstract: An electron beam exposure apparatus scans an electron beam in a limited space for electron beam lithography. A magnetic object lens of the apparatus has a lower pole piece facing an object to be processed, which is placed on a continuously moving stage to be exposed to the electron beam. A bore is opened in the lower pole piece which faces the object, and has a stripe-like cross-section to allow the passage of the electron beam. The shape of the opening inhibits the passage of undesirable leakage magnetic flux issued from the magnetic lens toward the object, and guides the electron beam to land on the object perpendicularly. With this configuration, deflection aberration of the deflection apparatus which is caused by an eddy current induced in the moving stage due to the magnetic flux reaching the stage is substantially prevented, and normal landing of the electron beam on the object is realized.

    Abstract translation: 电子束曝光装置在用于电子束光刻的有限空间内扫描电子束。 该装置的磁性物镜具有面对被处理物体的下极片,放置在要暴露于电子束的连续移动台上。 在面向物体的下极片中打开孔,并且具有条状横截面以允许电子束通过。 开口的形状禁止从磁性透镜向物体发出的不期望的泄漏磁通的通过,并且引导电子束垂直地对准物体。 利用这种结构,基本上防止了由于到达载物台的磁通量而在移动台中感应的涡流导致的偏转装置的偏转像差,并且实现了电子束在物体上的正常着落。

    CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD
    6.
    发明申请
    CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD 审中-公开
    充电颗粒光束书写装置和方法

    公开(公告)号:US20080265174A1

    公开(公告)日:2008-10-30

    申请号:US12103321

    申请日:2008-04-15

    Abstract: A charged particle beam writing apparatus includes an unit configured to irradiate a beam, a deflector configured to deflect the beam, a stage, on which a target is placed, configured to perform moving continuously, an lens configured to focus the beam onto the target, an unit configured to calculate a correction amount for correcting positional displacement of the beam on a surface of the target resulting from a first magnetic field caused by the lens and a second magnetic field caused by an eddy current generated by the first magnetic field and the moving of the stage, an unit configured to calculate a correction position where the positional displacement on the surface of the target has been corrected using the correction amount, and an unit configured to control the deflector so that the beam may be deflected onto the correction position.

    Abstract translation: 带电粒子束写入装置包括被配置为照射光束的单元,被配置为使光束偏转的偏转器,配置有目标的台阶,其被配置为连续地进行移动;配置成将光束聚焦到目标上的透镜, 被配置为计算校正量,用于校正由由透镜引起的第一磁场产生的目标表面上的光束的位置偏移和由由第一磁场和移动的所产生的涡流引起的第二磁场 所述单元被配置为使用所述校正量来计算已经校正了所述目标的表面上的位置偏移的校正位置,以及被配置为控制所述偏转器使得所述光束可能偏转到所述校正位置的单元。

    Magnetron assembly
    7.
    发明申请
    Magnetron assembly 审中-公开
    磁控管总成

    公开(公告)号:US20060049043A1

    公开(公告)日:2006-03-09

    申请号:US10919791

    申请日:2004-08-17

    Abstract: A rotating magnetron assembly having a structure to reduce bearing degradation by substantially preventing the flow of current through the bearing using non-conductive materials or providing a low resistance current flow path or by allowing current to flow through the bearing in a way which prevents arcing between the various bearing components.

    Abstract translation: 旋转磁控管组件具有通过基本上防止电流通过轴承使用非导电材料或提供低电阻电流流动路径或通过允许电流流过轴承的方式来减少轴承退化的结构,以防止电弧 各种轴承组件。

    Electron beam exposure apparatus
    8.
    发明授权
    Electron beam exposure apparatus 失效
    电子束曝光装置

    公开(公告)号:US4585943A

    公开(公告)日:1986-04-29

    申请号:US502571

    申请日:1983-06-09

    Abstract: An electron beam exposure apparatus having a control apparatus wherein the positioning error caused by transient response characteristics of an electron beam deflection device is detected by using a knife-edge type gauge and a reflecting electron detector. A compensation signal to compensate for the positioning error is produced in a compensation device, and the compensation signal is applied to the electron beam deflection device, whereby the deviation of the position of the electron beam, from the normal position, caused by the transient response characteristics, is reduced.

    Abstract translation: 一种具有控制装置的电子束曝光装置,其中通过使用刀刃式量规和反射电子检测器来检测由电子束偏转装置的瞬态响应特性引起的定位误差。 在补偿装置中产生用于补偿定位误差的补偿信号,并且补偿信号被施加到电子束偏转装置,由此由瞬态响应引起的电子束与正常位置的位置的偏离 特点,减少。

    Electron Microscope and Method of Adjusting the Same
    9.
    发明申请
    Electron Microscope and Method of Adjusting the Same 有权
    电子显微镜及其调整方法

    公开(公告)号:US20130327938A1

    公开(公告)日:2013-12-12

    申请号:US13915725

    申请日:2013-06-12

    Applicant: JEOL Ltd.

    Inventor: Yuji Kohno

    Abstract: An electron microscope is offered which has a detector and a noise canceling circuit whose offset can be easily adjusted if any information about the offset of the detector is not available. Also, a method of adjusting this microscope is offered. The method of adjusting the electron microscope (1) starts with measuring the output voltage from a preamplifier (20) at given timing while blocking the electron beam transmitted through a sample (14) from hitting the detector (15) (step S140). An offset voltage to be set into the noise canceling circuit (30) is calculated based on the measured output voltage from the preamplifier (20) (step S150). The calculated offset voltage is set into the noise canceling circuit (30) (step S160).

    Abstract translation: 提供具有检测器和噪声消除电路的电子显微镜,如果没有关于检测器的偏移的信息不可用,则可以容易地调整其偏移。 此外,还提供了一种调整该显微镜的方法。 调整电子显微镜(1)的方法从在给定时刻测量来自前置放大器(20)的输出电压开始,同时阻挡透过样品(14)的电子束撞击检测器(15)(步骤S140)。 基于来自前置放大器(20)的测量输出电压计算要设置到噪声消除电路(30)中的偏移电压(步骤S150)。 将计算出的偏移电压设定在噪声消除电路(30)中(步骤S160)。

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