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公开(公告)号：US20230420278A1
公开(公告)日：2023-12-28
申请号：US17849554
申请日：2022-06-24
Applicant: KLA CORPORATION
Inventor： Stefan Eyring , Zhijin Chen , Frank Laske
CPC classification number: H01L21/67276 , G06T7/0004 , G06T2207/30148
Abstract: A wafer metrology tool, such as a scanning electron microscope, can generate an image of a structure on a wafer. A simulated image of the structure also is determined from a design of the wafer. A contour of the structure in the image and a contour of the structure in the simulated image are determined. These contours are compared.
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公开(公告)号：US11703767B2
公开(公告)日：2023-07-18
申请号：US17487784
申请日：2021-09-28
Applicant: KLA Corporation
Inventor： Inna Steely-Tarshish , Stefan Eyring , Mark Ghinovker , Yoel Feier , Eitan Hajaj , Ulrich Pohlmann , Nadav Gutman , Chris Steely , Raviv Yohanan , Ira Naot
CPC classification number: G03F7/70633 , G03F7/70683
Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.
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公开(公告)号：US20220415725A1
公开(公告)日：2022-12-29
申请号：US17487842
申请日：2021-09-28
Applicant: KLA Corporation
Inventor： Inna Steely-Tarshish , Stefan Eyring , Mark Ghinovker , Yoel Feler , Eitan Hajaj , Ulrich Pohlmann , Nadav Gutman , Chris Steely , Raviv Yohanan , Ira Naot
IPC: H01L21/66 , H01L23/544
Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.
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公开(公告)号：US11508551B2
公开(公告)日：2022-11-22
申请号：US16691847
申请日：2019-11-22
Applicant: KLA CORPORATION
Inventor： Henning Stoschus , Stefan Eyring , Christopher Sears
IPC: H01J37/28 , H01J37/304 , G01N23/2251 , H01J37/22 , H01L21/66 , G06N20/00
Abstract: A detection and correction method for an electron beam system are provided. The method includes emitting an electron beam towards a specimen; modulating a beam current of the electron beam to obtain a beam signal. The method further includes detecting, using an electron detector, secondary and/or backscattered electrons emitted by the specimen to obtain electron data, wherein the electron data defines a detection signal. The method further includes determining, using a processor, a phase shift between the beam signal and the detection signal. The method further includes filtering, using the processor, the detection signal based on the phase shift.
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公开(公告)号：US12055859B2
公开(公告)日：2024-08-06
申请号：US18204662
申请日：2023-06-01
Applicant: KLA Corporation
Inventor： Inna Steely-Tarshish , Stefan Eyring , Mark Ghinovker , Yoel Feler , Eitan Hajaj , Ulrich Pohlmann , Nadav Gutman , Chris Steely , Raviv Yohanan , Ira Naot
IPC: G03F7/00
CPC classification number: G03F7/70633 , G03F7/70683
Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.
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Patent Agency Ranking
公开(公告)号：US20230326710A1
公开(公告)日：2023-10-12
申请号：US17967854
申请日：2022-10-17
Applicant: KLA Corporation
Inventor： Stefan Eyring
IPC: H01J37/22 , H01J37/28 , H01J37/244
CPC classification number: H01J37/222 , H01J37/28 , H01J37/244 , H01J2237/2814 , H01J2237/2817
Abstract: A simulated tool signal is determined from design data and tool properties of the tool making the measurements. A design-assisted composite signal is determined from measurements. An edge placement uniformity signal is then determined by comparing the simulated tool signal and the design-assisted composite signal. A shape and/or an area of the edge placement uniformity signal can be analyzed. The edge placement uniformity signal enables screening of structures with respect to wafer stochastics without the need to fully characterize all individual structures.
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公开(公告)号：US11720031B2
公开(公告)日：2023-08-08
申请号：US17487725
申请日：2021-09-28
Applicant: KLA Corporation
Inventor： Inna Steely-Tarshish , Stefan Eyring , Mark Ghinovker , Yoel Feler , Eitan Hajaj , Ulrich Pohlmann , Nadav Gutman , Chris Steely , Raviv Yohanan , Ira Naot
CPC classification number: G03F7/70633 , G01N21/4785 , G01N21/4788 , G01N21/9501 , G03F7/70625
Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.
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公开(公告)号：US20210405540A1
公开(公告)日：2021-12-30
申请号：US16916272
申请日：2020-06-30
Applicant: KLA Corporation
Inventor： Henning Stoschus , Stefan Eyring , Ulrich Pohlmann , Inna Steely-Tarshish , Nadav Gutman
Abstract: A metrology system may include a characterization tool configured to generate metrology data for a sample based on the interaction of an illumination beam with the sample, and may also include one or more adjustable measurement parameters to control the generation of metrology data. The metrology system may include one or more processors that may receive design data associated with a plurality of regions of interest for measurement, select individualized measurement parameters of the characterization tool for the plurality of regions of interest, and direct the characterization tool to characterize the plurality of regions of interest based on the individualized measurement parameters.
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公开(公告)号：US11209737B1
公开(公告)日：2021-12-28
申请号：US16916272
申请日：2020-06-30
Applicant: KLA Corporation
Inventor： Henning Stoschus , Stefan Eyring , Ulrich Pohlmann , Inna Steely-Tarshish , Nadav Gutman
Abstract: A metrology system may include a characterization tool configured to generate metrology data for a sample based on the interaction of an illumination beam with the sample, and may also include one or more adjustable measurement parameters to control the generation of metrology data. The metrology system may include one or more processors that may receive design data associated with a plurality of regions of interest for measurement, select individualized measurement parameters of the characterization tool for the plurality of regions of interest, and direct the characterization tool to characterize the plurality of regions of interest based on the individualized measurement parameters.
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公开(公告)号：US12085385B2
公开(公告)日：2024-09-10
申请号：US17524152
申请日：2021-11-11
Applicant: KLA Corporation
Inventor： Stefan Eyring , Frank Laske
CPC classification number: G01B15/04 , G01B11/002 , G01B11/24
Abstract: A metrology system may receive design data including a layout of fabricated instances of a structure on a sample. The system may further receive detection signals from the metrology tool associated within a field of view including multiple of the fabricated instances of the structure. The system may further generate design-assisted composite data for the structure by combining detection signals from one or more common features of the structure associated with the fabricated instances of the structure within the field of view using the design data. The system may further generate one or more metrology measurements of the structure based on the design-assisted composite data.
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