-
公开(公告)号：US11614692B2
公开(公告)日：2023-03-28
申请号：US16758908
申请日：2020-03-20
Applicant: KLA Corporation
Inventor： Vladimir Levinski , Yoel Feler
Abstract: A grating for use in metrology including a periodic structure including a plurality of units having a pitch P, at least one unit of the plurality of units including at least a first periodic sub-structure having a first sub-pitch P1 smaller than the pitch P, and at least a second periodic sub-structure arranged along-side and separated from the first periodic sub-structure within the at least one unit and having a second sub-pitch P2 smaller than the pitch P and different from the first sub-pitch P1, P1 and P2 being selected to yield at least one Moir pitch Pm=P1·P2/(P2−P1), the pitch P being an integer multiple of the first sub-pitch P and of the second sub-pitch P2.
-
公开(公告)号：US20230068016A1
公开(公告)日：2023-03-02
申请号：US17446161
申请日：2021-08-26
Applicant: KLA Corporation
Inventor： Alexander Novikov , Amnon Manassen , Ido Dolev , Yuri Paskover , Nir Ben David , Yoel Feler , Yoram Uziel
Abstract: A system and method for generating an angular calibration factor (ACF) for a metrology tool useful in a fabrication process, the method including providing the metrology tool, the metrology tool including a stage and a housing, measuring a rotational orientation of the stage relative to the housing and generating the ACF for the stage based at least partially on the rotational orientation.
-
公开(公告)号：US20220413395A1
公开(公告)日：2022-12-29
申请号：US17487784
申请日：2021-09-28
Applicant: KLA Corporation
Inventor： Inna Steely-Tarshish , Stefan Eyring , Mark Ghinovker , Yoel Feler , Eitan Hajaj , Ulrich Pohlmann , Nadav Gutman , Chris Steely , Raviv Yohanan , Ira Naot
IPC: G03F7/20
Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.
-
公开(公告)号：US20210333218A1
公开(公告)日：2021-10-28
申请号：US17142934
申请日：2021-01-06
Applicant: KLA Corporation
Inventor： Yoel Feler
Abstract: A metrology system configured to measure overlay errors on a sample is disclosed. The metrology system measures overlay error on the sample in a first direction and/or a second direction simultaneously or sequentially. The metrology system comprises an illumination sub-system configured to illuminate a hatched overlay target on the sample with one or more illumination lobes. The metrology system further comprises an objective lens and a detector at an image plane configured to image the hatched overlay target. A controller is configured to direct illumination source to generate the illumination lobes, receive images of the hatched overlay target, and calculate the overlay errors between a first layer of the sample and a second layer of the sample.
-
公开(公告)号：US20210200106A1
公开(公告)日：2021-07-01
申请号：US16758908
申请日：2020-03-20
Applicant: KLA Corporation
Inventor： Vladimir Levinski , Yoel Feler
Abstract: A grating for use in metrology including a periodic structure including a plurality of units having a pitch P, at least one unit of the plurality of units including at least a first periodic sub-structure having a first sub-pitch P1 smaller than the pitch P, and at least a second periodic sub-structure arranged along-side and separated from the first periodic sub-structure within the at least one unit and having a second sub-pitch P2 smaller than the pitch P and different from the first sub-pitch P1, P1 and P2 being selected to yield at least one Moir pitch Pm=P1·P2/(P2−P1), the pitch P being an integer multiple of the first sub-pitch P and of the second sub-pitch P2.
-
Patent Agency Ranking
公开(公告)号：US20210072650A1
公开(公告)日：2021-03-11
申请号：US16743124
申请日：2020-01-15
Applicant: KLA Corporation
Inventor： Yoel Feler , Mark Ghinovker , Diana Shaphirov , Evgeni Gurevich , Vladimir Levinski
Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.
-
公开(公告)号：US12204254B2
公开(公告)日：2025-01-21
申请号：US16760797
申请日：2020-03-27
Applicant: KLA CORPORATION
Inventor： Yoel Feler , Mark Ghinovker
IPC: G03F7/00
Abstract: A multi-layered moir target, useful in the calculation of misregistration between at least first, second and third layers being formed on a semiconductor device wafer, including at least one group of periodic structure stacks, each including a first stack, including a first stack first periodic structure (S1P1) having an S1P1 pitch along a first axis, a second stack, including a second stack first periodic structure (S2P1) having an S2P1 pitch along a second axis and a third stack, including a third stack first periodic structure (S3P1) having an S3P1 pitch along a third axis, the first axis being parallel to an x-axis or a y-axis, and at least one of the stacks including a second periodic structure having a second periodic structure pitch along at least one fourth axis parallel to the first axis and co-axial with one of the axes.
-
公开(公告)号：US20250021019A1
公开(公告)日：2025-01-16
申请号：US18902197
申请日：2024-09-30
Applicant: KLA Corporation
Inventor： Yoel Feler , Mark Ghinovker , Diana Shaphirov , Evgeni Gurevich , Vladimir Levinski
Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.
-
公开(公告)号：US20240110780A1
公开(公告)日：2024-04-04
申请号：US18131163
申请日：2023-04-05
Applicant: KLA Corporation
Inventor： Yoel Feler
IPC: G01B11/24
CPC classification number: G01B11/24
Abstract: A mosaic overlay target may include two or more cell sets distributed across a sample, wherein each cell set includes one or more cells, where each cell set is oriented to have at least one of mirror symmetry with respect to a central axis of the mosaic overlay target or rotational symmetry with respect to a central point of the mosaic overlay target. The cell sets may be configured according to a metrology recipe such that images of the mosaic overlay target generated based on the metrology recipe include metrology data suitable for two or more overlay measurements. A particular one of the overlay measurements may be based on portions of the images associated with at least one of the cell sets. At least two of the two or more overlay measurements may be alternative measurements of a common property of the sample.
-
公开(公告)号：US11862524B2
公开(公告)日：2024-01-02
申请号：US17487842
申请日：2021-09-28
Applicant: KLA Corporation
Inventor： Inna Steely-Tarshish , Stefan Eyring , Mark Ghinovker , Yoel Feler , Eitan Hajaj , Ulrich Pohlmann , Nadav Gutman , Chris Steely , Raviv Yohanan , Ira Naot
IPC: H01L21/66 , H01L23/544
CPC classification number: H01L22/30 , H01L23/544 , H01L22/12
Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.
-
-
-
-
-
-
-
-
-
Search Results
34
records
(took 0.014 seconds)
