OVERLAY MARK DESIGN FOR ELECTRON BEAM OVERLAY

    公开(公告)号:US20220413395A1

    公开(公告)日:2022-12-29

    申请号:US17487784

    申请日:2021-09-28

    Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

    Overlay mark design for electron beam overlay

    公开(公告)号:US11703767B2

    公开(公告)日:2023-07-18

    申请号:US17487784

    申请日:2021-09-28

    CPC classification number: G03F7/70633 G03F7/70683

    Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

    OVERLAY MARK DESIGN FOR ELECTRON BEAM OVERLAY

    公开(公告)号:US20230324810A1

    公开(公告)日:2023-10-12

    申请号:US18204662

    申请日:2023-06-01

    CPC classification number: G03F7/70633 G03F7/70683

    Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

    Overlay mark design for electron beam overlay

    公开(公告)号:US12055859B2

    公开(公告)日:2024-08-06

    申请号:US18204662

    申请日:2023-06-01

    CPC classification number: G03F7/70633 G03F7/70683

    Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

    Performance Optimized Scanning Sequence for eBeam Metrology and Inspection

    公开(公告)号:US20210405540A1

    公开(公告)日:2021-12-30

    申请号:US16916272

    申请日:2020-06-30

    Abstract: A metrology system may include a characterization tool configured to generate metrology data for a sample based on the interaction of an illumination beam with the sample, and may also include one or more adjustable measurement parameters to control the generation of metrology data. The metrology system may include one or more processors that may receive design data associated with a plurality of regions of interest for measurement, select individualized measurement parameters of the characterization tool for the plurality of regions of interest, and direct the characterization tool to characterize the plurality of regions of interest based on the individualized measurement parameters.

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