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公开(公告)号：US20220413395A1
公开(公告)日：2022-12-29
申请号：US17487784
申请日：2021-09-28
Applicant: KLA Corporation
Inventor： Inna Steely-Tarshish , Stefan Eyring , Mark Ghinovker , Yoel Feler , Eitan Hajaj , Ulrich Pohlmann , Nadav Gutman , Chris Steely , Raviv Yohanan , Ira Naot
IPC: G03F7/20
Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.
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公开(公告)号：US11355375B2
公开(公告)日：2022-06-07
申请号：US16931078
申请日：2020-07-16
Applicant: KLA Corporation
Inventor： Roie Volkovich , Liran Yerushalmi , Raviv Yohanan , Mark Ghinovker
Abstract: A metrology system and metrology methods are disclosed. The metrology system comprises a set of device features on a first layer of a sample, a first set of target features on a second layer of the sample and overlapping the set of device features, and a second set of target features on the second layer of the sample and overlapping the set of device features. Relative positions of a first set of Moiré fringes and a second set of Moiré fringes indicate overlay error between the first layer of the sample and the second layer of the sample.
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公开(公告)号：US10990022B2
公开(公告)日：2021-04-27
申请号：US16678840
申请日：2019-11-08
Applicant: KLA Corporation
Inventor： Enna Leshinsky-Altshuller , Inna Tarshish-Shapir , Mark Ghinovker , Diana Shaphirov , Guy Ben Dov , Roie Volkovich , Chris Steely
IPC: G03F7/20
Abstract: A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.
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公开(公告)号：US20210072650A1
公开(公告)日：2021-03-11
申请号：US16743124
申请日：2020-01-15
Applicant: KLA Corporation
Inventor： Yoel Feler , Mark Ghinovker , Diana Shaphirov , Evgeni Gurevich , Vladimir Levinski
Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.
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公开(公告)号：US12094100B2
公开(公告)日：2024-09-17
申请号：US17686382
申请日：2022-03-03
Applicant: KLA Corporation
Inventor： Mark Ghinovker , Yoel Feler
IPC: G06T7/68 , G03F9/00 , G06T7/00 , G06T7/73 , H01L21/027
CPC classification number: G06T7/0004 , G03F9/7092 , G06T7/68 , G06T7/73 , G06T2207/30148 , H01L21/0274
Abstract: A method of semiconductor metrology includes patterning a film layer on a semiconductor substrate to define a first field on the semiconductor substrate with a first pattern comprising at least a first target feature within a first margin along a first edge of the first field and to define a second field, which abuts the first field, with a second pattern comprising at least a second target feature within a second margin along a second edge of the second field, such that the second edge of the second field adjoins the first edge of the first field. The first target feature in the first margin is adjacent to the second target feature in the second margin without overlapping the second target feature. An image is captured of at least the first and second target features and is processed to detect a misalignment between the first and second fields.
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Patent Agency Ranking
公开(公告)号：US20240295827A1
公开(公告)日：2024-09-05
申请号：US17762030
申请日：2022-03-04
Applicant: KLA Corporation
Inventor： Yoel Feler , Mark Ghinovker , Nir BenDavid , Yoram Uziel
IPC: G03F7/00
CPC classification number: G03F7/70633 , G03F7/70516 , G03F7/70625
Abstract: A method for semiconductor metrology includes depositing first and second film layers on a substrate, patterning the layers to define a first target including a first feature in the first layer and a second feature in the second layer adjacent to the first feature, and a second target on the substrate including a first part, which is identical to the first target, and a second part adjacent to the first part such that the second overlay target has rotational symmetry of 180° around a normal to the substrate. The method further includes capturing and processing a first image of the second target to compute a calibration function based on the first and second parts of the target, and capturing and processing a second image of the first target while applying the calibration function to estimate an overlay error between the first and second film layers at the first location.
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公开(公告)号：US12055859B2
公开(公告)日：2024-08-06
申请号：US18204662
申请日：2023-06-01
Applicant: KLA Corporation
Inventor： Inna Steely-Tarshish , Stefan Eyring , Mark Ghinovker , Yoel Feler , Eitan Hajaj , Ulrich Pohlmann , Nadav Gutman , Chris Steely , Raviv Yohanan , Ira Naot
IPC: G03F7/00
CPC classification number: G03F7/70633 , G03F7/70683
Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.
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公开(公告)号：US20240035812A1
公开(公告)日：2024-02-01
申请号：US18144540
申请日：2023-05-08
Applicant: KLA Corporation
Inventor： Yoel Feler , Mark Ghinovker
CPC classification number: G01B11/272 , G06T7/0004 , G06T2207/30148
Abstract: A metrology target includes a first target structure set having one or more first target structures formed within at least one of a first working zone or a second working zone of a sample. The metrology target includes a second target structure set having one or more second target structures formed within at least one of the first working zone or the second working zone. The first working zone may include a center of symmetry that overlaps with a center of symmetry of the second working zone when an overlay error of one or more layers of the sample is not present. The metrology target may additionally include a third target structure set, a fourth target structure set, or a fifth target structure set.
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公开(公告)号：US11720031B2
公开(公告)日：2023-08-08
申请号：US17487725
申请日：2021-09-28
Applicant: KLA Corporation
Inventor： Inna Steely-Tarshish , Stefan Eyring , Mark Ghinovker , Yoel Feler , Eitan Hajaj , Ulrich Pohlmann , Nadav Gutman , Chris Steely , Raviv Yohanan , Ira Naot
CPC classification number: G03F7/70633 , G01N21/4785 , G01N21/4788 , G01N21/9501 , G03F7/70625
Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.
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公开(公告)号：US11686576B2
公开(公告)日：2023-06-27
申请号：US17098835
申请日：2020-11-16
Applicant: KLA Corporation
Inventor： Yoel Feler , Mark Ghinovker
CPC classification number: G01B11/272 , G06T7/0004 , G06T2207/30148
Abstract: A metrology target includes a first target structure set having one or more first target structures formed within at least one of a first working zone or a second working zone of a sample. The metrology target includes a second target structure set having one or more second target structures formed within at least one of the first working zone or the second working zone. The first working zone may include a center of symmetry that overlaps with a center of symmetry of the second working zone when an overlay error of one or more layers of the sample is not present. The metrology target may additionally include a third target structure set, a fourth target structure set, or a fifth target structure set.
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