公开(公告)号：US10990022B2

公开(公告)日：2021-04-27

申请号：US16678840

申请日：2019-11-08

Applicant: KLA Corporation

Inventor： Enna Leshinsky-Altshuller ,  Inna Tarshish-Shapir ,  Mark Ghinovker ,  Diana Shaphirov ,  Guy Ben Dov ,  Roie Volkovich ,  Chris Steely

IPC: G03F7/20

Abstract: A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.

公开(公告)号：US11874605B2

公开(公告)日：2024-01-16

申请号：US16921880

申请日：2020-07-06

Applicant: KLA Corporation

Inventor： Michael E. Adel ,  Inna Tarshish-Shapir ,  Shiming Wei ,  Mark Ghinovker

IPC: H01L21/66 ,  G03F7/00 ,  G06F30/00

CPC classification number: G03F7/70491 ,  G03F7/70616 ,  G06F30/00 ,  H01L22/30

Abstract: Metrology target design methods and verification targets are provided. Methods comprise using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may comprise overlay target features and be size optimized to be measureable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also comprise modifications to workflows between manufacturers and metrology vendors which provide enable higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.

公开(公告)号：US11467503B2

公开(公告)日：2022-10-11

申请号：US17200479

申请日：2021-03-12

Applicant: KLA Corporation

Inventor： Enna Leshinsky-Altshuller ,  Inna Tarshish-Shapir ,  Mark Ghinovker ,  Diana Shaphirov ,  Guy Ben Dov ,  Roie Volkovich ,  Chris Steely

IPC: G03F7/20

Abstract: A metrology system may include a controller to receive a first metrology dataset associated with a first set of metrology target features on a sample including first features from a first exposure field on a first sample layer and second features from a second exposure field on a second sample layer, where the second exposure field partially overlaps the first exposure field. The controller may further receive a second metrology dataset associated with a second set of metrology target features including third features from a third exposure field on the second layer that overlaps the first exposure field and fourth features formed from a fourth exposure field on the first layer of the sample that overlaps the second exposure field. The controller may further determine fabrication errors based on the first and second metrology datasets and generate correctables to adjust a lithography tool based on the fabrication errors.

公开(公告)号：US20210240089A1

公开(公告)日：2021-08-05

申请号：US16996254

申请日：2020-08-18

Applicant: KLA Corporation

Inventor： Anna Golotsvan ,  Inna Tarshish-Shapir ,  Mark Ghinovker ,  Rawi Dirawi

IPC: G03F7/20 ,  G01N23/2251 ,  G01N21/47

Abstract: A metrology target includes a first set of pattern elements compatible with a first metrology mode along one or more directions, and a second set of pattern elements compatible with a second metrology mode along one or more directions, wherein the second set of pattern elements includes a first portion of the first set of pattern elements, and wherein the second set of pattern elements is surrounded by a second portion of the first set of pattern elements not included in the second set of pattern elements.

公开(公告)号：US20210200105A1

公开(公告)日：2021-07-01

申请号：US17200479

申请日：2021-03-12

Applicant: KLA Corporation

Inventor： Enna Leshinsky-Altshuller ,  Inna Tarshish-Shapir ,  Mark Ghinovker ,  Diana Shaphirov ,  Guy Ben Dov ,  Roie Volkovich ,  Chris Steely

IPC: G03F7/20

Abstract: A metrology system may include a controller to receive a first metrology dataset associated with a first set of metrology target features on a sample including first features from a first exposure field on a first sample layer and second features from a second exposure field on a second sample layer, where the second exposure field partially overlaps the first exposure field. The controller may further receive a second metrology dataset associated with a second set of metrology target features including third features from a third exposure field on the second layer that overlaps the first exposure field and fourth features formed from a fourth exposure field on the first layer of the sample that overlaps the second exposure field. The controller may further determine fabrication errors based on the first and second metrology datasets and generate correctables to adjust a lithography tool based on the fabrication errors.

公开(公告)号：US20200348604A1

公开(公告)日：2020-11-05

申请号：US16921880

申请日：2020-07-06

Applicant: KLA Corporation

Inventor： Michael E. Adel ,  Inna Tarshish-Shapir ,  Shiming Wei ,  Mark Ghinovker

IPC: G03F7/20 ,  H01L21/66 ,  G06F30/00

Abstract: Metrology target design methods and verification targets are provided. Methods comprise using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may comprise overlay target features and be size optimized to be measureable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also comprise modifications to workflows between manufacturers and metrology vendors which provide enable higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.