公开(公告)号：US10950737B2

公开(公告)日：2021-03-16

申请号：US16486280

申请日：2018-02-13

Applicant: ELFYS OY

Inventor： Mikko Juntunen ,  Hele Savin ,  Ville Vähänissi ,  Päivikki Repo ,  Juha Heinonen

IPC: H01L31/0216 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/103 ,  H01L31/18 ,  H01L31/074

Abstract: A layered semiconductor structure with a width in a lateral direction, having an operating area covering part of the width of the semiconductor structure, comprises a semiconductor substrate with majority charge carriers of a first polarity; and a first dielectric layer with inducing net charge of the first polarity on the semiconductor substrate. An induced junction is induced in the semiconductor substrate by an electric field generated in the semiconductor substrate by the inducing net charge. The semiconductor structure is configured to confine the electric field generated in the semiconductor substrate in the operating area.

公开(公告)号：US11810987B2

公开(公告)日：2023-11-07

申请号：US17614884

申请日：2020-05-26

Applicant: ELFYS OY

Inventor： Antti Haarahiltunen ,  Juha Heinonen ,  Mikko Juntunen ,  Chiara Modanese ,  Toni Pasanen ,  Hele Savin ,  Ville Vähänissi

IPC: G01T1/20 ,  H01L31/0236 ,  G01T1/24 ,  H01L27/146 ,  H01L31/115

CPC classification number: H01L31/02363 ,  G01T1/20183 ,  G01T1/24 ,  H01L27/1461 ,  H01L27/14676 ,  H01L31/115

Abstract: This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.