公开(公告)号：US11810987B2

公开(公告)日：2023-11-07

申请号：US17614884

申请日：2020-05-26

申请人： ELFYS OY

发明人： Antti Haarahiltunen ,  Juha Heinonen ,  Mikko Juntunen ,  Chiara Modanese ,  Toni Pasanen ,  Hele Savin ,  Ville Vähänissi

IPC分类号： G01T1/20 ,  H01L31/0236 ,  G01T1/24 ,  H01L27/146 ,  H01L31/115

CPC分类号： H01L31/02363 ,  G01T1/20183 ,  G01T1/24 ,  H01L27/1461 ,  H01L27/14676 ,  H01L31/115

摘要： This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.