公开(公告)号：US10083770B2

公开(公告)日：2018-09-25

申请号：US14182908

申请日：2014-02-18

申请人： Jae Wan Kwon ,  Tongtawee Wacharasindhu ,  John David Robertson

发明人： Jae Wan Kwon ,  Tongtawee Wacharasindhu ,  John David Robertson

IPC分类号： G21H1/00 ,  G21H1/06

CPC分类号： G21H1/00 ,  G21H1/06

摘要： A solid-state high energy-density micro radioisotope power source device including a dielectric and radiation shielding body having an internal cavity, a first electrode disposed a first end of the cavity, and a second electrode disposed at an opposing second end of the cavity and spaced apart from the first electrode such that a micro chamber is provided therebetween. The device further includes a solid-state composite voltaic semiconductor disposed within the micro chamber fabricated by combining at least one semiconductor material with at least one radioisotope material to provide a pre-voltaic semiconductor composition; depositing the pre-voltaic semiconductor composition into the micro chamber; heating the body to liquefy the pre-voltaic semiconductor composition within the micro chamber such that the semiconductor and radioisotope materials are uniformly mixed; and cooling the body and liquid state composite mixture such that liquid state composite mixture solidifies to provide the solid-state composite voltaic semiconductor.

公开(公告)号：US20180211738A1

公开(公告)日：2018-07-26

申请号：US15414698

申请日：2017-01-25

申请人： Bor-Ruey CHEN

发明人： Bor-Ruey CHEN

IPC分类号： G21H1/06 ,  H01L51/44 ,  H01L51/42

CPC分类号： G21H1/06 ,  H01L51/4213 ,  H01L51/441 ,  H01L51/448

摘要： Herein is disclosed a quantum cell from top to down including: an N-type ohmic contact electrode, an N-type π-orbital semiconductor substrate, an N-type π-orbital semiconductor epitaxy layer, a SiO2 passivation layer, a graphite contact layer, a Schottky contact electrode, a binding layer, and a radioisotope layer. The N-type π-orbital semiconductor substrate includes an organic semiconductor material with an aromatic group or a semiconductor material with a carbon-carbon bond. The N-type π-orbital semiconductor epitaxy layer has a doping concentration of 1×1013-5×1014 cm−3 and is formed by injection of a cationic complex in a dose of 6×1013-1×1015 cm−3.

公开(公告)号：US09893226B2

公开(公告)日：2018-02-13

申请号：US15392769

申请日：2016-12-28

申请人： TRI ALPHA ENERGY, INC.

发明人： Michl W. Binderbauer ,  Toshiki Tajima

IPC分类号： G01J1/00 ,  H01L31/0725 ,  H01L31/115 ,  G01T1/28 ,  G21H1/04 ,  G21H1/06

CPC分类号： H01L31/0725 ,  G01T1/28 ,  G21H1/04 ,  G21H1/06 ,  H01L31/0352 ,  H01L31/115 ,  Y02E10/542

摘要： Systems and methods for the conversion of energy of high-energy photons into electricity which utilize a series of materials with differing atomic charges to take advantage of the emission of a large multiplicity of electrons by a single high-energy photon via a cascade of Auger electron emissions. In one embodiment, a high-energy photon converter preferably includes a linearly layered nanometric-scaled wafer made up of layers of a first material sandwiched between layers of a second material having an atomic charge number differing from the atomic charge number of the first material. In other embodiments, the nanometric-scaled layers are configured in a tubular or shell-like configuration and/or include layers of a third insulator material.

公开(公告)号：US09728292B2

公开(公告)日：2017-08-08

申请号：US14349933

申请日：2012-05-31

申请人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Yujuan Zhang ,  Chao Han ,  Yanqiang Shi

发明人： Hui Guo ,  Keji Zhang ,  Yuming Zhang ,  Yujuan Zhang ,  Chao Han ,  Yanqiang Shi

IPC分类号： G21H1/06 ,  H01L29/868 ,  H01L21/04 ,  H01L29/66 ,  H01L29/36 ,  H01L29/861 ,  H01L29/16 ,  H01L29/167 ,  H01L21/02

CPC分类号： G21H1/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/861 ,  H01L29/868

摘要： A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm−3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm−3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm−3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.

公开(公告)号：US09570644B2

公开(公告)日：2017-02-14

申请号：US15087283

申请日：2016-03-31

申请人： TRI ALPHA ENERGY, INC.

发明人： Michl W. Binderbauer ,  Toshiki Tajima

IPC分类号： G01J1/00 ,  H01L31/0725 ,  G01T1/28 ,  G21H1/06 ,  H01L31/0352 ,  H01L31/115 ,  G21H1/04

CPC分类号： H01L31/0725 ,  G01T1/28 ,  G21H1/04 ,  G21H1/06 ,  H01L31/0352 ,  H01L31/115 ,  Y02E10/542

摘要： Systems and methods for the conversion of energy of high-energy photons into electricity which utilize a series of materials with differing atomic charges to take advantage of the emission of a large multiplicity of electrons by a single high-energy photon via a cascade of Auger electron emissions. In one embodiment, a high-energy photon converter preferably includes a linearly layered nanometric-scaled wafer made up of layers of a first material sandwiched between layers of a second material having an atomic charge number differing from the atomic charge number of the first material. In other embodiments, the nanometric-scaled layers are configured in a tubular or shell-like configuration and/or include layers of a third insulator material.

摘要翻译： 用于将高能光子能量转换成电的系统和方法，其利用具有不同原子电荷的一系列材料，以利用单个高能光子通过俄歇电子级联发射大量多个电子 排放。 在一个实施例中，高能量光子转换器优选地包括由夹在第二材料的层之间的第一材料的层构成的线性层状纳米尺度晶片，其具有与第一材料的原子电荷数不同的原子电荷数。 在其他实施例中，纳米尺度的层被构造成管状或壳状构造和/或包括第三绝缘体材料的层。

公开(公告)号：US09305674B1

公开(公告)日：2016-04-05

申请号：US13427165

申请日：2012-03-22

申请人： Alan Kevin Wertsching ,  Troy Joseph Trantor ,  Rhonda Tranter ,  Matthias Anthony Ebner ,  Brad Curtis Norby

发明人： Alan Kevin Wertsching ,  Troy Joseph Trantor ,  Matthias Anthony Ebner ,  Brad Curtis Norby

IPC分类号： H01L31/02 ,  G21H1/12 ,  H01L31/04

CPC分类号： G21H1/12 ,  G21G1/00 ,  G21G1/06 ,  G21H1/06

摘要： A method and device for producing secure, high-density tritium bonded with carbon. A substrate comprising carbon is provided. A precursor is intercalated between carbon in the substrate. The precursor intercalated in the substrate is irradiated until at least a portion of the precursor, preferably a majority of the precursor, is transmutated into tritium and bonds with carbon of the substrate forming bonded tritium. The resulting bonded tritium, tritium bonded with carbon, produces electrons via beta decay. The substrate is preferably a substrate from the list of substrates consisting of highly-ordered pyrolytic graphite, carbon fibers, carbon nanotunes, buckministerfullerenes, and combinations thereof. The precursor is preferably boron-10, more preferably lithium-6. Preferably, thermal neutrons are used to irradiate the precursor. The resulting bonded tritium is preferably used to generate electricity either directly or indirectly.

摘要翻译： 一种生产安全，高密度氚与碳结合的方法和装置。 提供了包含碳的衬底。 前体被插入到基底中的碳之间。 插入到基底中的前体被辐照，直到前体的至少一部分，优选大部分前体被转变为氚并与形成键合的氚的基底的碳结合。 所得的结合的氚，与碲结合的氚通过β衰变产生电子。 基材优选是由高度有序的热解石墨，碳纤维，碳纳米管，巴克斯特勒，以及它们的组合构成的基材列表中的基材。 前体优选为硼-10，更优选为锂-6。 优选地，使用热中子照射前体。 所得到的结合氚优选用于直接或间接地发电。

公开(公告)号：US20150001988A1

公开(公告)日：2015-01-01

申请号：US14313953

申请日：2014-06-24

申请人： PETER CABAUY

发明人： PETER CABAUY

IPC分类号： G21H1/06 ,  H01L31/18

CPC分类号： G21H1/06

摘要： A betavoltaic power source. The betavoltaic power source comprises a source of beta particles, a substrate with shaped features defined therein and a InGaP betavoltaic junction disposed between the source of beta particles and the substrate, and also having shaped features therein responsive to the shaped features in the substrate, the InGaP betavoltaic junction device for collecting the beta particles and for generating electron hole pairs responsive thereto.

摘要翻译： 一个betavoltaic电源。 紫外线电源包括β粒子源，其中限定有成形特征的基底和设置在β粒子源和基底之间的InGaP贝塔联结，并且还具有响应于基底中的成形特征的成形特征， 用于收集β粒子并产生响应于其的电子空穴对的InGaP贝塔结合装置。

公开(公告)号：US08487507B1

公开(公告)日：2013-07-16

申请号：US12637735

申请日：2009-12-14

申请人： Peter Cabauy ,  Larry C. Olsen ,  Noren Pan

发明人： Peter Cabauy ,  Larry C. Olsen ,  Noren Pan

IPC分类号： G21H1/06

CPC分类号： G21H1/06

摘要： A multilayer device for producing electricity. The device comprising a betavoltaic source layer for generating beta particles, and at least three semiconductor layers each having a bandgap substantially similar to a band gap of the other layers, the at least three layers comprising a doped top layer, an undoped intermediate layer and a doped bottom layer, wherein the top and the bottom layers are doped with opposite-type dopants, and wherein the top layer is closer to the betavoltaic source layer than the bottom layer.

摘要翻译： 一种用于生产电力的多层器件。 该装置包括用于产生β粒子的贝塔源源层和至少三个半导体层，每个半导体层具有基本上类似于其它层的带隙的带隙，所述至少三个层包括掺杂的顶层，未掺杂的中间层和 掺杂的底层，其中顶层和底层掺杂有相反型掺杂剂，并且其中顶层比底层更接近于betalol源源层。

公开(公告)号：US20120161575A1

公开(公告)日：2012-06-28

申请号：US13302353

申请日：2011-11-22

申请人： Byoung Gun CHOI ,  Jung Bum Kim ,  In Gi Lim ,  Chang Hee Hyoung ,  Hyung Il Park ,  Kyung Hwan Park ,  Tae Young Kang ,  Sung Eun Kim ,  Jung Hwan Hwang ,  Tae Wook Kang ,  Kyung Soo Kim ,  Sung Weon Kang

发明人： Byoung Gun CHOI ,  Jung Bum Kim ,  In Gi Lim ,  Chang Hee Hyoung ,  Hyung Il Park ,  Kyung Hwan Park ,  Tae Young Kang ,  Sung Eun Kim ,  Jung Hwan Hwang ,  Tae Wook Kang ,  Kyung Soo Kim ,  Sung Weon Kang

IPC分类号： G21H1/06 ,  H01L31/18

CPC分类号： G21H1/06

摘要： Provided are a stack-type beta battery generating a current from a beta source and a method of manufacturing the same. The method includes forming an oxide mask in a predetermined pattern on a surface of a substrate, forming a plurality of recesses by etching a region without the oxide mask from the substrate, removing the oxide mask and forming a PN-junction layer on the substrate, forming a first electrode on the PN-junction layer and forming a second electrode on another surface of the substrate, and forming a unit module by stacking a radioisotope layer on the PN-junction layer, the radioisotope layer emitting a beta ray. The beta battery can improve efficiency per unit area than a single layered beta battery by the number of stacked PN-junctions, and the process is simpler than a pore-forming process using DRIE, and manufacturing costs and time can be saved.

摘要翻译： 提供了生成来自β源的电流的堆叠型β电池及其制造方法。 该方法包括在基板的表面上形成预定图案的氧化物掩模，通过从衬底上蚀刻没有氧化掩模的区域形成多个凹槽，去除氧化物掩模并在衬底上形成PN结层， 在所述PN结层上形成第一电极，并在所述衬底的另一表面上形成第二电极，以及通过在所述PN结层上叠放放射性同位素层来形成单位模块，所述放射性同位素层发射β射线。 β电池可以通过堆叠PN结的数量提高单层面积的单位面积效率，并且该工艺比使用DRIE的成孔工艺简单，并且可以节省制造成本和时间。

公开(公告)号：US20120149142A1

公开(公告)日：2012-06-14

申请号：US13372734

申请日：2012-02-14

申请人： Michael Spencer ,  Mvs Chandrashekhar

发明人： Michael Spencer ,  Mvs Chandrashekhar

IPC分类号： H01L21/20

CPC分类号： H01L21/02625 ,  G21H1/02 ,  G21H1/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02579

摘要： This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+ N− SiC junctions and a pillared or planar device surface (as an example). Junctions are deemed “ultra shallow”, since the thin junction layer (which is proximal to the device's radioactive source) is only 300 nm to 5 nm thick (as an example). This is a betavoltaic device, made of ultra-shallow junctions, which allows such penetration of emitted lower energy electrons, thus, reducing or eliminating losses through electron-hole pair recombination at the surface.

摘要翻译： 这是一种新型的SiC催化剂装置（作为实例），其包括一个或多个“超浅”P + N-SiC结和柱状或平面的器件表面（作为示例）。 连接点被认为是“超浅”，因为薄接层（其接近器件的放射源）仅为300nm至5nm厚（作为示例）。 这是一种由超浅结点制成的紫外线装置，其允许发射的较低能量电子的这种穿透，从而减少或消除在表面处的电子 - 空穴对复合的损耗。