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    TRITIUM THERMOELECTRIC GENERATOR
    1.
    发明公开
    TRITIUM THERMOELECTRIC GENERATOR 审中-公开

    公开(公告)号：US20230360816A1

    公开(公告)日：2023-11-09

    申请号：US18144194

    申请日：2023-05-06

    申请人： City Labs, Inc.

    发明人： Peter Cabauy ,  Larry C. OLSEN ,  Jesse P. Grant ,  Johann Hernandez ,  Rachel Cabauy

    IPC分类号： G21H1/06 ,  G21H1/10 ,  G21H1/02

    CPC分类号： G21H1/103 ,  G21H1/02 ,  G21H1/06

    摘要： A device for producing electricity. The device comprises a source of tritium radioisotopes, an element Th maintained at a temperature Th, and an element Tc maintained at a temperature Tc; Tc lower than Th. The source generates heat and is disposed in thermal communication with the element Th to maintain the temperature Th. First and second doped elements, each doped with a different dopant type, are oriented in parallel relative to the heat flow path between the element Th and the element Tc and electrically connected in series According to the Seebeck effect, a voltage is generated between the first and second doped elements due to a temperature differential between the Tc and Th, causing current to flow through the serially-connected doped elements. Helium generated during generation of the radioisotopes is vented from the device.

    Series and/or parallel connected alpha, beta, and gamma voltaic cell devices
    2.
    发明授权
    Series and/or parallel connected alpha, beta, and gamma voltaic cell devices 有权

    公开(公告)号：US10978215B2

    公开(公告)日：2021-04-13

    申请号：US15602078

    申请日：2017-05-22

    申请人： City Labs, Inc.

    发明人： Peter Cabauy ,  Larry C. Olsen ,  Bret J. Elkind ,  Jesse Grant

    IPC分类号： G21H1/06 ,  H01L31/0304

    摘要： A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

    Tritium Direct Conversion Semiconductor Device
    4.
    发明申请
    Tritium Direct Conversion Semiconductor Device 有权

    公开(公告)号：US20170092385A1

    公开(公告)日：2017-03-30

    申请号：US15286567

    申请日：2016-10-06

    申请人： City Labs, Inc.

    发明人： Peter Cabauy ,  Larry C. Olsen ,  Noren Pan

    IPC分类号： G21H1/06 ,  H01L31/115

    CPC分类号： G21H1/06 ,  H01L31/115

    摘要： A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide material layers each layer having different dopant concentrations and doped with either n-type dopants or p-type dopants, a first terminal on a first surface of the semiconductor material, a beta particle source proximate the first surface for emitting beta particles that penetrate into the semiconductor material, and a second terminal on a second surface of the semiconductor material; the semiconductor material for producing current between the first and second terminals responsive to the beta particles penetrating into the semiconductor material.

    SERIES AND/OR PARALLEL CONNECTED ALPHA, BETA, AND GAMMA VOLTAIC CELL DEVICES
    5.
    发明公开
    SERIES AND/OR PARALLEL CONNECTED ALPHA, BETA, AND GAMMA VOLTAIC CELL DEVICES 审中-公开

    公开(公告)号：US20240242853A1

    公开(公告)日：2024-07-18

    申请号：US18412728

    申请日：2024-01-15

    申请人： CITY LABS, INC.

    发明人： Peter CABAUY ,  Larry C. OLSEN ,  Bret J. ELKIND ,  Jesse GRANT

    IPC分类号： G21H1/06 ,  H01L31/0304

    CPC分类号： G21H1/06 ,  H01L31/03046

    摘要： A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

    SERIES AND/OR PARALLEL CONNECTED ALPHA, BETA, AND GAMMA VOLTAIC CELL DEVICES
    6.
    发明申请
    SERIES AND/OR PARALLEL CONNECTED ALPHA, BETA, AND GAMMA VOLTAIC CELL DEVICES 有权

    公开(公告)号：US20230091756A1

    公开(公告)日：2023-03-23

    申请号：US17937575

    申请日：2022-10-03

    申请人： CITY LABS, INC.

    发明人： PETER CABAUY ,  LARRY OLSEN ,  BRET J. ELKIND ,  JESSE GRANT

    IPC分类号： G21H1/06

    摘要： A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

    Series and/or parallel connected alpha, beta, and gamma voltaic cell devices
    7.
    发明授权
    Series and/or parallel connected alpha, beta, and gamma voltaic cell devices 有权

    公开(公告)号：US11462337B2

    公开(公告)日：2022-10-04

    申请号：US17227756

    申请日：2021-04-12

    申请人： CITY LABS, INC.

    发明人： Peter Cabauy ,  Larry Olsen ,  Bret J. Elkind ,  Jesse Grant

    IPC分类号： G21H1/06 ,  H01L31/0304

    摘要： A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

    Semiconductor device for directly converting radioisotope emissions into electrical power
    8.
    发明授权
    Semiconductor device for directly converting radioisotope emissions into electrical power 有权

    公开(公告)号：US10607744B2

    公开(公告)日：2020-03-31

    申请号：US16252698

    申请日：2019-01-20

    申请人： City Labs, Inc.

    发明人： Peter Cabauy

    IPC分类号： G21H1/00 ,  G21H1/06 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/115 ,  H01L31/0216

    摘要： A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture the beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A beta particle source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material.

    SEMICONDUCTOR DEVICE FOR DIRECTLY CONVERTING RADIOISOTOPE EMISSIONS INTO ELECTRICAL POWER
    9.
    发明申请
    SEMICONDUCTOR DEVICE FOR DIRECTLY CONVERTING RADIOISOTOPE EMISSIONS INTO ELECTRICAL POWER 审中-公开

    公开(公告)号：US20190228872A1

    公开(公告)日：2019-07-25

    申请号：US16252698

    申请日：2019-01-20

    申请人： City Labs, Inc.

    发明人： Peter Cabauy

    IPC分类号： G21H1/06 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/115

    摘要： A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture the beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A beta particle source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material.