知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

22 条记录 (耗时 0.054 秒)

    SEMICONDUCTOR DEVICE WITH EPITAXIAL LIFTOFF LAYERS FOR DIRECTLY CONVERTING RADIOISOTOPE EMISSIONS INTO ELECTRICAL POWER
    2.
    发明申请
    SEMICONDUCTOR DEVICE WITH EPITAXIAL LIFTOFF LAYERS FOR DIRECTLY CONVERTING RADIOISOTOPE EMISSIONS INTO ELECTRICAL POWER 审中-公开

    公开(公告)号：US20200279666A1

    公开(公告)日：2020-09-03

    申请号：US16835219

    申请日：2020-03-30

    申请人： CITY LABS, INC.

    发明人： Peter Cabauy

    IPC分类号： G21H1/06 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/115 ,  H01L31/0216

    摘要： A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A radioisotope source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material. The devices can be connected in series or parallel.

    Semiconductor device for directly converting radioisotope emissions into electrical power
    3.
    发明授权
    Semiconductor device for directly converting radioisotope emissions into electrical power 有权

    公开(公告)号：US10186339B2

    公开(公告)日：2019-01-22

    申请号：US15790713

    申请日：2017-10-23

    申请人： City Labs, Inc.

    发明人： Peter Cabauy

    IPC分类号： G21H1/06 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/115 ,  H01L31/0216

    摘要： A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture the beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A beta particle source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material.

    Series and/or parallel connected alpha, beta, and gamma voltaic cell devices
    4.
    发明授权
    Series and/or parallel connected alpha, beta, and gamma voltaic cell devices 有权

    公开(公告)号：US11462337B2

    公开(公告)日：2022-10-04

    申请号：US17227756

    申请日：2021-04-12

    申请人： CITY LABS, INC.

    发明人： Peter Cabauy ,  Larry Olsen ,  Bret J. Elkind ,  Jesse Grant

    IPC分类号： G21H1/06 ,  H01L31/0304

    摘要： A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.

    Semiconductor device for directly converting radioisotope emissions into electrical power
    5.
    发明授权
    Semiconductor device for directly converting radioisotope emissions into electrical power 有权

    公开(公告)号：US10607744B2

    公开(公告)日：2020-03-31

    申请号：US16252698

    申请日：2019-01-20

    申请人： City Labs, Inc.

    发明人： Peter Cabauy

    IPC分类号： G21H1/00 ,  G21H1/06 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/115 ,  H01L31/0216

    摘要： A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture the beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A beta particle source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material.

    SEMICONDUCTOR DEVICE FOR DIRECTLY CONVERTING RADIOISOTOPE EMISSIONS INTO ELECTRICAL POWER
    6.
    发明申请
    SEMICONDUCTOR DEVICE FOR DIRECTLY CONVERTING RADIOISOTOPE EMISSIONS INTO ELECTRICAL POWER 审中-公开

    公开(公告)号：US20190228872A1

    公开(公告)日：2019-07-25

    申请号：US16252698

    申请日：2019-01-20

    申请人： City Labs, Inc.

    发明人： Peter Cabauy

    IPC分类号： G21H1/06 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/115

    摘要： A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture the beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A beta particle source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material.