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公开(公告)号:US12080822B2
公开(公告)日:2024-09-03
申请号:US17311798
申请日:2019-11-29
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Hironori Sonobe
IPC: H01L31/107 , G01J1/44 , H01L27/144 , H01L31/02
CPC classification number: H01L31/107 , G01J1/44 , H01L27/1446 , H01L31/02027 , G01J2001/4466
Abstract: In a light detection device, the semiconductor substrate forms an APD and a temperature compensation diode so as to be spaced apart from each other. The semiconductor substrate includes a peripheral carrier absorbing portion configured to absorb carriers located at the periphery, between the APD and the temperature compensation diode when viewed from the direction perpendicular to the main surface. When viewed from the direction perpendicular to the main surface, on a line segment connecting the APD and the temperature compensation diode at the shortest distance, the shortest distance between the APD and the peripheral carrier absorbing portion is smaller than the shortest distance between the temperature compensation diode and a portion, which is closest to the APD, of edges of the peripheral carrier absorbing portion.
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公开(公告)号:US11561131B2
公开(公告)日:2023-01-24
申请号:US17311766
申请日:2019-11-29
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Hironori Sonobe
IPC: G01J1/44 , H01L27/144 , H01L31/02 , H01L31/107
Abstract: A determination method determines a difference voltage between a breakdown voltage and a bias voltage. A temperature compensation unit provides temperature compensation for the gain of the APD by controlling the bias voltage based on the difference voltage. The bias voltage is “Vr”, and the gain of the APD to which the bias voltage is applied is “M”. The slope and intercept of the regression line having “(1/M)×(dM/dVr)” as an objective variable and “M” as an explanatory variable in data indicating the correlation between the bias voltage and the gain are obtained. “ΔV” calculated by substituting the slope into “a” in the Equation (1), substituting the intercept into “b” in the Equation (1), and substituting a gain to be set in an avalanche photodiode of a light detection device into “Md” in the Equation (1) is determined as the difference voltage. [ Equation 1 ] Δ V = 1 b log ( b / a M d + 1 ) ( 1 )
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公开(公告)号:US12113088B2
公开(公告)日:2024-10-08
申请号:US17311838
申请日:2019-11-29
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Hironori Sonobe , Fumitaka Nishio , Yuji Okazaki , Kazuaki Maekita
IPC: H01L27/146 , G01J1/44 , H01L31/107
CPC classification number: H01L27/14636 , G01J1/44 , H01L31/107 , G01J2001/4466
Abstract: In a light detection device, the semiconductor substrate has first and second main surfaces facing each other. The semiconductor substrate includes a plurality of cells. Each of the plurality of cells includes at least one avalanche photodiode. The plurality of pad electrodes are arranged on the first main surface so as to be spaced apart from the plurality of cells. The plurality of wiring portions are arranged on the first main surface. Each of the plurality of wiring portions connects the cell and the pad electrode corresponding to each other. The semiconductor substrate includes a peripheral carrier absorbing portion configured to absorb carriers located at a periphery of the peripheral carrier absorbing portion. The peripheral carrier absorbing portion is provided around each pad electrode and each wiring portion when viewed from a direction perpendicular to the first main surface.
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公开(公告)号:US11901379B2
公开(公告)日:2024-02-13
申请号:US17311824
申请日:2019-11-29
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Hironori Sonobe , Fumitaka Nishio , Masanori Muramatsu , Yuji Okazaki
IPC: H01L27/144 , H01L31/107 , G01J1/44
CPC classification number: H01L27/1446 , G01J1/44 , H01L31/107
Abstract: In a light detection device 1 the plurality of pad electrodes are arranged on the semiconductor substrate. Each of the plurality of wires is connected to the pad electrode corresponding thereto. A stitch bond of a corresponding wire is formed on each pad electrode. A distance between each pad electrode and a cell corresponding to the pad electrode is smaller than a distance between the pad electrodes connected to mutually different cells of the cells. The plurality of pad electrodes are arranged in a first region and a second region that are spaced apart from each other with a light receiving region interposed therebetween. The pad electrode corresponding to a cell is arranged in the first region. The pad electrode corresponding to a cell is arranged in the second region.
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公开(公告)号:US11513002B2
公开(公告)日:2022-11-29
申请号:US17311756
申请日:2019-11-29
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Hironori Sonobe , Takahiro Kondo , Kazuaki Maekita
IPC: G01J1/44 , G01J1/42 , G01J1/02 , H01L31/10 , H01L31/107
Abstract: A light detection device includes an APD, a plurality of temperature compensation diodes, and a circuit unit. The plurality of temperature compensation diodes have different breakdown voltages lower than a breakdown voltage of the APD. The circuit unit puts any one of the plurality of temperature compensation diodes into a breakdown state. The circuit unit includes a plurality of terminals and a terminal. The plurality of terminals are respectively connected to electrodes of the mutually different temperature compensation diodes. The terminal is electrically connected to the APD and electrodes of the temperature compensation diodes.
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公开(公告)号:US11927478B2
公开(公告)日:2024-03-12
申请号:US17311763
申请日:2019-11-29
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Hironori Sonobe
IPC: H01L31/107 , G01J1/44 , H01L27/144 , H01L31/02
CPC classification number: G01J1/44 , H01L27/1446 , H01L31/02027 , H01L31/107 , G01J2001/444 , G01J2001/4466
Abstract: In a light detection device, the light detection unit includes an APD, a plurality of temperature compensation diodes, and a terminal electrically connecting the APD and the plurality of temperature compensation diodes in parallel with each other. The plurality of temperature compensation diodes is configured to provide temperature compensation for the gain of the APD. The light detection unit has a light detection region and temperature detection regions. The APD is provided in the light detection region. The temperature detection regions are located around the light detection region. The plurality of temperature compensation diodes are provided in the temperature detection regions. The light detection region is interposed between the temperature detection region and the temperature detection region.
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