公开(公告)号：US20220302185A1

公开(公告)日：2022-09-22

申请号：US17836256

申请日：2022-06-09

申请人： SONY GROUP CORPORATION

发明人： Hideyuki HONDA ,  Tetsuya UCHIDA ,  Toshifumi WAKANO ,  Yusuke TANAKA ,  Yoshiharu KUDOH ,  Hirotoshi NOMURA ,  Tomoyuki HIRANO ,  Shinichi YOSHIDA ,  Yoichi UEDA ,  Kosuke NAKANISHI

IPC分类号： H01L27/146 ,  H01L21/76 ,  H04N5/369 ,  H04N5/365 ,  H04N5/378

摘要： The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

公开(公告)号：US20220150429A1

公开(公告)日：2022-05-12

申请号：US17585109

申请日：2022-01-26

申请人： SONY GROUP CORPORATION

发明人： Yoshiaki MASUDA ,  Yuki MIYANAMI ,  Hideshi ABE ,  Tomoyuki HIRANO ,  Masanari YAMAGUCHI ,  Yoshiki EBIKO ,  Kazufumi WATANABE ,  Tomoharu OGITA

IPC分类号： H04N5/369 ,  G02B1/118 ,  H01L27/146 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H04N5/225 ,  H01L31/10

摘要： The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.