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    NITRIDE SEMICONDUCTOR LASER, EPITAXIAL SUBSTRATE
    1.
    发明申请
    NITRIDE SEMICONDUCTOR LASER, EPITAXIAL SUBSTRATE 有权
    硝酸根半导体激光，外延衬底

    公开(公告)号：US20130177035A1

    公开(公告)日：2013-07-11

    申请号：US13644478

    申请日：2012-10-04

    申请人： Sumitomo Electric Industries, Ltd. ,  SONY CORPORATION

    发明人： Takashi KYONO ,  Yohei ENYA ,  Takamichi SUMITOMO ,  Yusuke YOSHIZUMI ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA

    IPC分类号： H01S5/30

    CPC分类号： H01S5/30 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2304/04

    摘要： A nitride semiconductor laser comprises a conductive support base having a primary surface of gallium nitride based semiconductor, an active layer on the primary surface, and a p-type cladding region on the primary surface. The primary surface is tilted to a reference plane perpendicular to a reference axis extending in the c-axis direction of the gallium nitride based semiconductor. The p-type cladding region comprises a first p-type group III nitride semiconductor layer of an AlGaN layer anisotropically-strained, and a second p-type group III nitride semiconductor layer of material different from the AlGaN layer. The first p-type group III nitride semiconductor layer is provided between the second p-type group III nitride semiconductor layer and the active layer. The AlGaN layer has the largest bandgap in the p-type cladding region. The second p-type group III nitride semiconductor layer has a resistivity lower than the first p-type group III nitride semiconductor layer.

    摘要翻译： 氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑基底，主表面上的有源层和主表面上的p型包层区域。 主表面倾斜到垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面。 p型包层区包括各向异性应变的AlGaN层的第一p型III族氮化物半导体层和与AlGaN层不同的材料的第二p型III族氮化物半导体层。 第一p型III族氮化物半导体层设置在第二p型III族氮化物半导体层和有源层之间。 AlGaN层在p型包层区域具有最大的带隙。 第二p型III族氮化物半导体层的电阻率低于第一p型III族氮化物半导体层。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    氮化物半导体发光器件

    公开(公告)号：US20130142210A1

    公开(公告)日：2013-06-06

    申请号：US13658239

    申请日：2012-10-23

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. ,  SONY CORPORATION

    发明人： Takashi KYONO ,  Yohei ENYA ,  Masaki UENO ,  Katsunori YANASHIMA ,  Kunihiko TASAI ,  Hiroshi NAKAJIMA ,  Noriyuki FUTAGAWA

    IPC分类号： H01S5/30

    CPC分类号： H01S5/3013 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/34333

    摘要： A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer between the active layer and a p-type cladding. The first inner-layer, active layer and second inner-layer constitute a core-region. The n-type cladding, core-region and p-type cladding constitute a waveguide-structure. The active layer and the first inner-layer constitute a first heterojunction inclined at an angle greater than zero with respect to a reference plane of the c-plane of the nitride semiconductor of the n-type cladding. Piezoelectric polarization of the well layer is oriented in a direction from the p-type cladding toward the n-type cladding. The second inner-layer and InGaN well layer constitute a second heterojunction. A distance between the ridge bottom and the second heterojunction is 200 nm or less. The ridge includes a third heterojunction between the second inner-layer and the p-type cladding.

    摘要翻译： 氮化物半导体发光器件具有半导体脊，并且包括在有源层和n型包层之间的第一内层和在有源层和p型包层之间的第二内部半导体层。 第一内层，活性层和第二内层构成核心区域。 n型包层，芯区和p型包层构成波导结构。 有源层和第一内层构成相对于n型包层的氮化物半导体的c面的参考平面以大于零的角度倾斜的第一异质结。 阱层的压电极化在从p型包层朝向n型包层的方向上取向。 第二内层和InGaN阱层构成第二异质结。 脊底与第二异质结之间的距离为200nm以下。 脊包括在第二内层和p型包层之间的第三异质结。