公开(公告)号：US09276379B2

公开(公告)日：2016-03-01

申请号：US14495904

申请日：2014-09-25

申请人： Panasonic Corporation

发明人： Tomoya Satoh ,  Takeshi Yokoyama ,  Shouichi Takasuka ,  Isao Kidoguchi

IPC分类号： H01L27/15 ,  H01S5/22 ,  H01S5/32 ,  H01S5/343 ,  B82Y20/00 ,  H01L23/532 ,  H01L21/285 ,  H01L21/316

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01L21/28575 ,  H01L23/53223 ,  H01L2924/0002 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/34313 ,  H01L2924/00

摘要： A semiconductor light emitting device includes a first conductive clad layer that is group III-V semiconductor mixed crystal, an active layer, and a second conductive clad layer. The second conductive clad layer has a laminated structure of at least three layers including a first layer, a second layer, and a third layer disposed in this order closer to the active layer. The second layer and the third layer are included in a striped ridge, and the second layer is positioned at a skirt of the ridge. The surface of the first layer is a flat part at both sides of the ridge. When Al compositions of the first layer, second layer, and third layer are X1, X2, and X3, respectively, the relation X2>X1, X3 is satisfied. When film thicknesses of the first layer, second layer, and third layer are D1, D2, and D3, the relation D2

摘要翻译： 半导体发光器件包括作为III-V族半导体混晶的第一导电覆层，有源层和第二导电覆层。 第二导电覆层具有包括第一层，第二层和第三层的至少三层的叠层结构，该第三层以更靠近有源层的顺序布置。 第二层和第三层包括在条纹脊中，第二层位于脊的裙部。 第一层的表面是脊的两侧的平坦部分。 当第一层，第二层和第三层的Al组分分别为X1，X2和X3时，满足关系X2> X1，X3。 当第一层，第二层和第三层的膜厚为D1，D2和D3时，满足关系D2