公开(公告)号：US20190245322A1

公开(公告)日：2019-08-08

申请号：US16316602

申请日：2017-06-28

申请人： PANASONIC CORPORATION

发明人： Hiroyuki HAGINO ,  Osamu IMAFUJI ,  Shinichiro NOZAKI

IPC分类号： H01S5/028 ,  H01S5/22 ,  H01S5/343 ,  H01S5/042

CPC分类号： H01S5/0281 ,  H01S5/0224 ,  H01S5/02276 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/343 ,  H01S5/34333

摘要： A nitride semiconductor laser includes: a first nitride semiconductor layer; a light-emitting layer formed on the first nitride semiconductor layer and including a nitride semiconductor; a second nitride semiconductor layer formed on the light-emitting layer and having a ridge portion; an electrode component formed on the second nitride semiconductor layer, and which is wider than the ridge portion; and a dielectric layer formed on side surfaces of the ridge portion and including SiO2. A space is present between the electrode component and the dielectric layer, and the electrode component is prevented from being in contact with the dielectric layer by the space, and is in contact with the upper surface of the ridge portion.