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公开(公告)号:US11867813B2
公开(公告)日:2024-01-09
申请号:US17690200
申请日:2022-03-09
发明人: James W. Raring , Melvin McLaurin , Paul Rudy , Vlad Novotny
IPC分类号: G01S17/86 , G01S17/10 , G01S17/89 , G01S7/481 , F21K9/64 , H01S5/00 , H01S5/024 , F21V29/70 , G01S7/487 , H01S5/02212 , H01S5/343 , H01S5/40 , G01S17/931 , H01S5/02251 , H01S5/02325 , H01S5/02375 , H01S5/028 , H01S5/22 , H01S5/02 , H01S5/02255 , H01S5/02345
CPC分类号: G01S17/10 , F21K9/64 , F21V29/70 , G01S7/487 , G01S7/4817 , G01S17/86 , G01S17/89 , G01S17/931 , H01S5/0085 , H01S5/02212 , H01S5/02251 , H01S5/02325 , H01S5/02375 , H01S5/02469 , H01S5/34333 , H01S5/4012 , H01S5/0215 , H01S5/0217 , H01S5/0287 , H01S5/02255 , H01S5/02345 , H01S5/22 , H01S5/4031
摘要: A distance detecting system for use in mobile machines comprises a gallium and nitrogen containing laser diode disposed within a light of a mobile machine. The gallium and nitrogen containing laser diode is configured to emit a first light with a first peak wavelength. A wavelength conversion member is configured to produce a white light. A first sensing light signal is based on the first peak wavelength. One or more optical elements are configured to direct at least partially the white light to illuminate one or more target objects or areas and to transmit respectively the first sensing light signal for sensing at least one remote point. A detector is configured to detect reflected signals of the first sensing light signal to determine coordinates of the at least one remote point.
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公开(公告)号:US20230139114A1
公开(公告)日:2023-05-04
申请号:US17816967
申请日:2022-08-02
申请人: JoeScan, Inc.
发明人: Jason Farmer , John Joseph Kollmann
IPC分类号: H01S5/02315 , H01S5/02375 , H01S5/02365
摘要: Adjustable rotation stages include a dual-axis flexure that define first and second axes of rotation A clamp secures a laser diode beam generator or other components to the dual-axis flexure and provides adjustable rotation about a third axis that if different from the first and second axes. Rotation adjustments can be made with screws facing in a common direction.
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公开(公告)号:US11329452B2
公开(公告)日:2022-05-10
申请号:US16818801
申请日:2020-03-13
IPC分类号: H01S3/10 , H01S5/0687 , H01S5/343 , H01S5/40 , H01S5/10 , H01S5/06 , H01S5/028 , H01S5/026 , H01S5/02 , H01S5/14 , H01S5/0234 , H01S5/02375 , H01S5/02326 , H01S5/065 , H01S5/0625
摘要: A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.
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公开(公告)号:US11784456B2
公开(公告)日:2023-10-10
申请号:US17002722
申请日:2020-08-25
发明人: Guomin Yu
IPC分类号: H01S5/00 , H01S5/02 , H01S5/125 , H01S5/026 , H01S5/22 , H01S5/02326 , H01S5/20 , H01L33/00 , H01S5/02375
CPC分类号: H01S5/021 , H01S5/026 , H01S5/0215 , H01S5/02326 , H01S5/125 , H01S5/2081 , H01S5/2206 , H01L33/0066 , H01S5/02375
摘要: A method of manufacturing a III-V based optoelectronic device on a silicon-on-insulator wafer. The silicon-on-insulator wafer comprises a silicon device layer, a substrate, and an insulator layer between the substrate and silicon device layer. The method includes the steps of: providing a device coupon, the device coupon being formed of a plurality of III-V based layers; providing the silicon-on-insulator wafer, the wafer including a cavity with a bonding region; transfer printing the device coupon into the cavity, and bonding a layer of the device coupon to the bonding region, such that a channel is left around one or more lateral sides of the device coupon; filling the channel with a bridge-waveguide material; and performing one or more etching steps on the device coupon, silicon-on-insulator wafer, and/or channel.
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公开(公告)号:US11710942B2
公开(公告)日:2023-07-25
申请号:US16769357
申请日:2018-09-13
申请人: SONY CORPORATION
发明人: Hidekazu Kawanishi , Jugo Mitomo , Kei Satou
IPC分类号: H01S5/40 , H01S5/02 , H01S5/02326 , H01S5/0239 , H01S5/0237 , H01S5/02345 , H01S5/02251 , H01S5/02375 , H01S5/02234 , H01S5/024 , B41J2/455
CPC分类号: H01S5/4031 , B41J2/455 , H01S5/0201 , H01S5/0237 , H01S5/0239 , H01S5/02251 , H01S5/02326 , H01S5/02345 , H01S5/02375 , H01S5/02234 , H01S5/02476
摘要: To provide a method of manufacturing a light-emitting module capable of accurately arranging a plurality of light-emitting elements at narrow intervals, and a light-emitting module manufactured by the method of manufacturing, and, moreover, a device on which the light-emitting module is mounted. Provided is a method of manufacturing a light-emitting module including: a plurality of light-emitting element arrays each including, in a plane parallel to resonator length of a light-emitting element, a plurality of the light-emitting elements arranged along a width direction perpendicular to a direction of the resonator length; and a substrate on which the plurality of light-emitting element arrays is mounted, the method including arranging the plurality of light-emitting elements on the substrate at predetermined intervals along the width direction in the light-emitting module, by causing side surfaces of the respective light-emitting element arrays adjacent to each other along the width direction to be in contact with each other and mounting the respective light-emitting element arrays on the substrate.
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公开(公告)号:US20230176202A1
公开(公告)日:2023-06-08
申请号:US18073695
申请日:2022-12-02
申请人: HL KLEMOVE CORP.
发明人: Yun Ki HAN , HoSeok SHIN , HakGu HAN , Yong Min PARK , Hyuk RYU
IPC分类号: G01S7/497 , H01S5/02375 , G01S7/481
CPC分类号: G01S7/4972 , G01S7/4813 , H01S5/02375
摘要: Provided are an apparatus for manufacturing a light detection and ranging (LiDAR) receiver and a method of manufacturing a LiDAR receiver. In the apparatus for manufacturing a LiDAR receiver according to one embodiment of the present disclosure, a receiver board is coupled integrally to a barrel having one side provided with a lens after the receiver board having one side on which a light detection element is mounted is aligned with the other side of the barrel, and the apparatus includes a base plate having a plate shape, a light source unit, and a receiver alignment unit, wherein the light source unit may include a light-emitting module and a light-emitting module fixing member, and the receiver alignment unit may include an alignment plate having a plate shape, a barrel fixing member, a receiver board fixing member, and a receiver board alignment member.
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公开(公告)号:US11303095B2
公开(公告)日:2022-04-12
申请号:US16791791
申请日:2020-02-14
申请人: NICHIA CORPORATION
发明人: Tadayuki Kitajima , Tomokazu Taji
IPC分类号: H01S5/02375 , H01S5/00
摘要: A method of manufacturing a light emitting device, the method including: disposing a first semiconductor laser element on a disposition surface of a base member such that a light emission end surface of the first semiconductor laser element is parallel to a first line passing through a pair of alignment marks provided on the base member; and disposing a first light-reflective member on the disposition surface such that a reference line for the first light-reflective member, which serves as an alignment reference in disposing the first light-reflective member, is parallel to a second line that is oblique to the first line at a predetermined angle.
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公开(公告)号:US11239631B2
公开(公告)日:2022-02-01
申请号:US16584218
申请日:2019-09-26
发明人: Tymon Barwicz , Yves C. Martin , Jason S. Orcutt
IPC分类号: H01S5/02375 , H01S5/22 , H01S5/0234 , H01S5/02326 , H01S5/042 , H01S5/0237
摘要: A method of forming a laser including device is provided that in one embodiment includes providing a laser chip including at least one ridge structure that provides an alignment features. The method further includes bonding a type IV photonics chip to the laser chip, wherein a vertical alignment feature from the type IV photonics chip is inserted in a recess relative to the at least one ridge structure that provides the alignment features of the laser structure.
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公开(公告)号:US12123769B2
公开(公告)日:2024-10-22
申请号:US17412739
申请日:2021-08-26
发明人: Scott Burroughs , Brent Fisher , James Carter
IPC分类号: G01J1/44 , F21V5/04 , G01S7/481 , G01S17/02 , G01S17/89 , G01S17/894 , G02B5/08 , G02B26/10 , H01L25/00 , H01L31/167 , H01L31/18 , H01S3/02 , H01S5/00 , H01S5/02253 , H01S5/02375 , H01S5/026 , H01S5/042 , H01S5/062 , H01S5/12 , H01S5/183 , H01S5/30 , H01S5/40 , H01S5/42 , G02B3/00 , H01S5/02 , H01S5/02255
CPC分类号: G01J1/44 , F21V5/041 , F21V5/045 , G01S7/4815 , G01S17/02 , G01S17/89 , G01S17/894 , G02B5/0883 , G02B26/10 , H01L25/50 , H01L31/167 , H01L31/18 , H01S3/025 , H01S5/0028 , H01S5/0071 , H01S5/02253 , H01S5/02375 , H01S5/026 , H01S5/0262 , H01S5/04254 , H01S5/062 , H01S5/12 , H01S5/183 , H01S5/18394 , H01S5/18397 , H01S5/30 , H01S5/40 , H01S5/4025 , H01S5/4037 , H01S5/4075 , H01S5/423 , G01J2001/448 , G02B3/0006 , H01S5/0216 , H01S5/0217 , H01S5/02255 , H01S5/04257
摘要: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
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公开(公告)号:US20240089002A1
公开(公告)日:2024-03-14
申请号:US18502449
申请日:2023-11-06
申请人: Marvell Asia Pte Ltd
IPC分类号: H04B10/40 , G02B6/12 , G02B6/126 , G02B6/42 , H01S3/13 , H01S5/00 , H01S5/0234 , H01S5/02375
CPC分类号: H04B10/40 , G02B6/12004 , G02B6/126 , G02B6/4246 , G02B6/428 , H01S3/13 , H01S5/0085 , H01S5/0234 , H01S5/02375 , G02B6/1228
摘要: An integrated circuit includes a silicon photonics substrate having a silicon-based material, silicon photonics components formed in the silicon photonics substrate to receive and transmit optical signals, and electrical connections; a transimpedance amplifier chip arranged on the silicon photonics substrate, having a silicon-germanium material that is different than the silicon-based material, connected via the electrical connections to at least one of the silicon photonics components configured to receive an optical signal, and configured to process a received optical signal and output a processed signal to a digital signal processor; and a driver chip arranged on the silicon photonics substrate, having CMOS material that is different than the silicon-germanium material and the silicon-based material, connected via the electrical connections to drive at least one of the silicon photonics components configured to generate an optical signal for transmission.
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