公开(公告)号：US09130121B2

公开(公告)日：2015-09-08

申请号：US14220459

申请日：2014-03-20

Applicant: NICHIA CORPORATION

Inventor： Tokuya Kozaki

IPC: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/343 ,  H01L33/24 ,  H01S5/183 ,  H01S5/20 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/24 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3407 ,  H01S5/3415 ,  H01S5/343 ,  H01S5/34333 ,  H01S2304/12

Abstract: In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

公开(公告)号：US20130028283A1

公开(公告)日：2013-01-31

申请号：US13416981

申请日：2012-03-09

Applicant: Wolfgang Kaiser ,  Jörg Troger ,  Michael Moser

Inventor： Wolfgang Kaiser ,  Jörg Troger ,  Michael Moser

IPC: H01S5/125

CPC classification number: H01S5/06226 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3403 ,  H01S5/3415

Abstract: There is described a high speed vertical-cavity surface-emitting laser (VCSEL) comprising a substrate and first and second distributed Bragg reflectors (DBRs) disposed on the substrate, each comprising a stack of layers of alternating refractive index. A resonant cavity is disposed between the DBRs and an active region disposed in the resonant cavity. The resonant cavity is formed of material having low refractive index and has an optical thickness in a direction perpendicular to the substrate of ½λ, where λ is the wavelength of light emitted by the VCSEL.

Abstract translation: 描述了包括基板的高速垂直腔表面发射激光器（VCSEL），以及设置在基板上的第一和第二分布布拉格反射器（DBR），每个包括交替折射率层的叠层。 谐振腔设置在DBR和设置在谐振腔中的有源区之间。 谐振腔由具有低折射率的材料形成，并且在垂直于衬底的方向上的光学厚度为½λ，其中λ是由VCSEL发射的光的波长。

公开(公告)号：US07646009B2

公开(公告)日：2010-01-12

申请号：US11348331

申请日：2006-02-07

Applicant: Tokuya Kozaki

Inventor： Tokuya Kozaki

IPC: H01L29/06

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/24 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3086 ,  H01S5/3407 ,  H01S5/3415 ,  H01S5/343 ,  H01S5/34333 ,  H01S2304/12

Abstract: In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

公开(公告)号：US20070153856A1

公开(公告)日：2007-07-05

申请号：US11611500

申请日：2006-12-15

Applicant: Takeo KAGEYAMA ,  Yoshihiko Ikenaga

Inventor： Takeo KAGEYAMA ,  Yoshihiko Ikenaga

IPC: H01S5/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3415 ,  H01S5/34306

Abstract: An active layer is formed by arranging a plurality of quantum-well layers and a plurality of barrier layers alternatively. An amount of band discontinuity in a conduction band between a barrier layer that is sandwiched by the quantum-well layers and adjacent quantum-well layers is equal to or more than 26 meV and less than 300 meV, so that an overflow of injected carriers due to a thermal excitation between the quantum-well layers is intentionally caused to make the carrier density uniform between the quantum-well layers.

Abstract translation: 通过交替地布置多个量子阱层和多个势垒层来形成有源层。 夹在量子阱层和相邻量子阱层之间的阻挡层之间的导带中的带间的数量等于或大于26meV且小于300meV，从而使注入的载流子溢出 有意地引起量子阱层之间的热激发使得量子阱层之间的载流子密度均匀。

公开(公告)号：US06870194B2

公开(公告)日：2005-03-22

申请号：US10350068

申请日：2003-01-24

Applicant: Sergey Vainshtein ,  Juha Tapio Kostamovaara ,  Larisa Shestak ,  Mikhail Sverdlov

Inventor： Sergey Vainshtein ,  Juha Tapio Kostamovaara ,  Larisa Shestak ,  Mikhail Sverdlov

IPC: H01S1/00 ,  H01S5/062 ,  H01S5/20 ,  H01S5/32 ,  H01S5/34 ,  H01L27/15 ,  H01L21/00

CPC classification number: B82Y20/00 ,  H01S5/06216 ,  H01S5/2009 ,  H01S5/32 ,  H01S5/3415

Abstract: An apparatus and a method are provided for generating an optical pulse by using a current pulse. The arrangement is based on a specific semiconductor structure, where a carrier injector is separated from the optically active region by a potential barrier for the injected carriers and on low carrier mobility in the semiconductor component, which features give rise to formation of a current-assisted strong electric field in the optically active region at moderate current densities before positive net gain is achieved. The current-assisted electric field broadens the gain spectrum in the active layer thus suppressing positive net gain and permitting carrier accumulation in the active layer. When the current pulse is stopped, the positive net gain is achieved, giving rise to an optical emission from the active layer.

Abstract translation: 提供了一种通过使用电流脉冲来产生光脉冲的装置和方法。 该布置基于特定的半导体结构，其中载流子注入器与注入的载流子的势垒与光学活性区域分离，并且在半导体组件中具有低载流子迁移率，其特征在于形成电流辅助 在获得正净增益之前，以适当的电流密度在光学活性区域中的强电场。 电流辅助电场使有源层中的增益谱变宽，从而抑制正净增益并允许载流子在有源层中的累积。 当电流脉冲停止时，实现正净增益，从而产生来自有源层的光发射。

公开(公告)号：US06682949B2

公开(公告)日：2004-01-27

申请号：US10191151

申请日：2002-07-09

Applicant: Masakazu Ukita

Inventor： Masakazu Ukita

IPC: H01L2100

CPC classification number: B82Y20/00 ,  H01S5/0658 ,  H01S5/2022 ,  H01S5/2231 ,  H01S5/2237 ,  H01S5/3415

Abstract: A semiconductor laser basically includes a first cladding layer; an active layer; a second cladding layer; and a current constriction means for defining a current injection region in the active layer. The active layer has a gain region which acquires an optical gain by current injection thereto; a saturable absorption region in which current injection thereto little occurs and light effusion thereto occurs; and an outside region, being in contact with the saturable absorption region, in which current injection thereto little occurs and light effusion thereto little occurs. In this semiconductor laser, an effective band gap of the saturable absorption region is set to be larger than that of the outside region. With this configuration, carriers in the saturable absorption region are efficiently migrated to the outside region, so that the carrier lifetime in the saturable absorption region is actually shortened. As a result, the semiconductor laser can sustain the self pulsation at a high light output and a high operational temperature, and further can be produced with a good production yield.

Abstract translation: 半导体激光器基本上包括第一覆层; 活性层 第二覆层; 以及用于限定有源层中的电流注入区域的电流收缩装置。 有源层具有通过电流注入而获得光学增益的增益区域; 饱和吸收区域，其中几乎不发生电流注入并发生光渗出; 以及与可饱和吸收区域接触的外部区域，其中几乎不发生电流注入，并且少量发生光渗出。 在该半导体激光器中，可饱和吸收区域的有效带隙被设定为大于外部区域的有效带隙。 利用这种构造，可饱和吸收区域中的载流子被有效地迁移到外部区域，从而实际上缩短了可饱和吸收区域中的载流子寿命。 结果，半导体激光器能够在高光输出和高操作温度下维持自脉动，并且可以以良好的产量获得。

公开(公告)号：US06636541B1

公开(公告)日：2003-10-21

申请号：US09516835

申请日：2000-03-02

Applicant: Hisashi Nakayama ,  Masahiro Kito ,  Masato Ishino ,  Yasushi Matsui

Inventor： Hisashi Nakayama ,  Masahiro Kito ,  Masato Ishino ,  Yasushi Matsui

IPC: H01S500

CPC classification number: B82Y20/00 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3409 ,  H01S5/3415

Abstract: A semiconductor laser device includes a substrate, a p-type cladding layer and a n-type cladding layer provided on the substrate, and an active layer provided between the p-type cladding layer and the n-type cladding layer, having at least two barrier layers and at least two well layers, the barrier layers and the well layers being disposed alternately. Band offsets in a conduction band between the barrier layers and the well layers are provided so as to increase from the n-type cladding layer aide toward the p-type cladding layer side.

Abstract translation: 半导体激光装置包括基板，设置在基板上的p型覆层和n型覆层，以及设置在p型覆层和n型覆层之间的有源层，具有至少两个 阻挡层和至少两个阱层，阻挡层和阱层交替布置。 阻挡层和阱层之间的导带中的带偏移被设置为从n型包覆层向p型包覆层侧增加。

公开(公告)号：US06470039B1

公开(公告)日：2002-10-22

申请号：US09457133

申请日：1999-12-09

Applicant: Masakazu Ukita

Inventor： Masakazu Ukita

IPC: H01S500

CPC classification number: B82Y20/00 ,  H01S5/0658 ,  H01S5/2022 ,  H01S5/2231 ,  H01S5/2237 ,  H01S5/3415

Abstract: A semiconductor laser basically includes a first cladding layer; an active layer; a second cladding layer; and a current constriction means for defining a current injection region in the active layer. The active layer has a gain region which acquires an optical gain by current injection thereto; a saturable absorption region in which current injection thereto little occurs and light effusion thereto occurs; and an outside region, being in contact with the saturable absorption region, in which current injection thereto little occurs and light effusion thereto little occurs. In this semiconductor laser, an effective band gap of the saturable absorption region is set to be larger than that of the outside region. With this configuration, carriers in the saturable absorption region are efficiently migrated to the outside region, so that the carrier lifetime in the saturable absorption region is actually shortened. As a result, the semiconductor laser can sustain the self pulsation at a high light output and a high operational temperature, and further can be produced with a good production yield.

Abstract translation: 半导体激光器基本上包括第一覆层; 活性层 第二覆层; 以及用于限定有源层中的电流注入区域的电流收缩装置。 有源层具有通过电流注入而获得光学增益的增益区域; 饱和吸收区域，其中几乎不发生电流注入并发生光渗出; 以及与可饱和吸收区域接触的外部区域，其中几乎不发生电流注入，并且少量发生光渗出。 在该半导体激光器中，可饱和吸收区域的有效带隙被设定为大于外部区域的有效带隙。 利用这种构造，可饱和吸收区域中的载流子被有效地迁移到外部区域，从而实际上缩短了可饱和吸收区域中的载流子寿命。 结果，半导体激光器能够在高光输出和高操作温度下维持自脉动，并且可以以良好的产量获得。

公开(公告)号：US6111904A

公开(公告)日：2000-08-29

申请号：US2401

申请日：1998-01-02

Applicant: Shinji Takano

Inventor： Shinji Takano

IPC: H01S5/00 ,  H01S5/062 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/22 ,  H01S5/34 ,  H01S5/06209 ,  H01S5/1053 ,  H01S5/106 ,  H01S5/12 ,  H01S5/2077 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/3211 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/3415 ,  H01S5/34306 ,  H01S5/34366

Abstract: The present invention provides another active layer structure provided in a light emission device for emitting a light with a predetermined wavelength. The active layer structure comprises a multiple quantum well structure and at least a second well layer. The multiple quantum well structure comprises alternating laminations of first well layers showing electroluminescence and potential barrier layers. The first well layers have a first set of energy band gaps which are uniform and corresponds to the predetermined wavelength, provided that energy band gap is defined as a difference between a ground level of electrons in conduction band and a ground level of holes in valence band. The second well layer is provided within any of the potential barer layers so that the second well layer is separated via the potential barrier layers from the first well layers. The second well layer has a second energy band gap in a range which is above the first set of energy band gaps and below a set of forbidden band widths of the potential barrier layers. The range of the second energy band gaps is defined so that the second well layer exhibits carrier accumulations and no electro-luminescence to thereby ensure that carriers accumulated in the second well layer are injected into the first well layers when the first well layers are deficient in carriers for the electro-luminescence.

Abstract translation: 本发明提供了一种设置在用于发射具有预定波长的光的发光装置中的另一有源层结构。 有源层结构包括多量子阱结构和至少第二阱层。 多量子阱结构包括显示电致发光和势垒层的第一阱层的交替层叠。 第一阱层具有均匀的并且对应于预定波长的第一组能带隙，只要能带隙被定义为导带中的电子的地电位与价带中的空穴的地平面之间的差 。 第二阱层设置在任何潜在的覆盖层内，使得第二阱层经由势垒层与第一阱层分离。 第二阱层具有在第一组能带隙之上并且低于势垒层的一组禁带宽度的范围内的第二能带隙。 定义第二能带隙的范围，使得第二阱层表现出载流子积聚和无电致发光，从而确保当第一阱层缺陷时将积聚在第二阱层中的载流子注入到第一阱层中 载体用于电致发光。

公开(公告)号：US5790578A

公开(公告)日：1998-08-04

申请号：US625345

申请日：1996-04-01

Applicant: Shinji Takano

Inventor： Shinji Takano

IPC: H01S5/00 ,  H01S5/062 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/22 ,  H01S5/34 ,  H01S5/06209 ,  H01S5/1053 ,  H01S5/106 ,  H01S5/12 ,  H01S5/2077 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/3211 ,  H01S5/3403 ,  H01S5/3407 ,  H01S5/3415 ,  H01S5/34306 ,  H01S5/34366

Abstract: The present invention provides another active layer structure provided in a light emission device for emitting a light with a predetermined wavelength. The active layer structure comprises a multiple quantum well structure and at least a second well layer. The multiple quantum well structure comprises alternating laminations of first well layers showing electroluminescence and potential barrier layers. The first well layers have a first set of energy band gaps which are uniform and correspond to the predetermined wavelength. An energy band gap is defined as a difference between a ground level of electrons in conduction band and a ground level of holes in valence band. The second well layer is provided within any of the potential barrier layers so that the second well layer is separated by the potential barrier layers from the first well layers. The second well layer has a second energy band gap in a range which is above the first set of energy band gaps and below a set of forbidden band widths of the potential barrier layers. The range of the second energy band gaps is defined so that the second well layer exits carrier accumulations and no electroluminescence to thereby ensure that carriers accumulated in the second well layer are injected into the first well layers when the first well layers are deficient in carriers for the electro-luminescence.

Abstract translation: 本发明提供了一种设置在用于发射具有预定波长的光的发光装置中的另一有源层结构。 有源层结构包括多量子阱结构和至少第二阱层。 多量子阱结构包括显示电致发光和势垒层的第一阱层的交替层叠。 第一阱层具有均匀且对应于预定波长的第一组能带隙。 能带隙被定义为导带中的电子的地电平和价带中的空穴的地平面之间的差。 第二阱层设置在任何势垒层内，使得第二阱层被势垒层与第一阱层隔开。 第二阱层具有在第一组能带隙之上并且低于势垒层的一组禁带宽度的范围内的第二能带隙。 定义第二能带隙的范围，使得第二阱层离开载流子积聚并且不产生电致发光，从而确保当第一阱层在载流子不足时将积聚在第二阱层中的载流子注入到第一阱层中 电致发光。