发明授权
- 专利标题： VCSEL system with transverse P/N junction
- 专利标题（中）： 具有横向P / N结的VCSEL系统
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申请号： US11187477申请日： 2005-07-22
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公开(公告)号： US07502401B2公开(公告)日： 2009-03-10
- 发明人: Jeffrey N. Miller , Scott W. Corzine , David P. Bour
- 申请人： Jeffrey N. Miller , Scott W. Corzine , David P. Bour
- 申请人地址： SG Singapore
- 专利权人： Avago Technologies General IP (Singapore) Pte. Ltd.
- 当前专利权人： Avago Technologies General IP (Singapore) Pte. Ltd.
- 当前专利权人地址： SG Singapore
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and forming a transverse p/n junction laterally to the integrated multiple gain regions, wherein forward biasing the transverse p/n junction causes photon emission in the integrated multiple gain regions.
公开/授权文献
- US20070019697A1 VCSEL system with transverse P/N junction 公开/授权日：2007-01-25
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