公开(公告)号：US20120273794A1

公开(公告)日：2012-11-01

申请号：US13407191

申请日：2012-02-28

Applicant: Shinji SAITO ,  Shinya Nunoue ,  Rei Hashimoto

Inventor： Shinji SAITO ,  Shinya Nunoue ,  Rei Hashimoto

IPC: H01L33/32 ,  H01L33/00 ,  H01L29/06 ,  H01L33/20

CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01S5/0217 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3428 ,  H01S5/34333 ,  H01S5/4037 ,  H01S5/4056 ,  H01S2301/173 ,  H01S2301/176 ,  H01S2304/02 ,  H01S2304/04

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first layer has a first upper surface and a first side surface. The active layer has a first portion covering the first upper surface and having a second upper surface, and a second portion covering the first side surface and having a second side surface. The second layer has a third portion covering the second upper surface, and a fourth portion covering the second side surface. The first and second layers include a nitride semiconductor. The first portion along a stacking direction has a thickness thicker than the second portion along a direction from the first side surface toward the second side surface. The third portion along the stacking direction has a thickness thicker than the fourth portion along the direction.

Abstract translation: 根据一个实施例，半导体发光器件包括第一半导体层，有源层和第二半导体层。 第一层具有第一上表面和第一侧面。 有源层具有覆盖第一上表面并具有第二上表面的第一部分和覆盖第一侧表面并具有第二侧表面的第二部分。 第二层具有覆盖第二上表面的第三部分和覆盖第二侧表面的第四部分。 第一层和第二层包括氮化物半导体。 沿着层叠方向的第一部分沿着从第一侧面朝向第二侧面的方向具有比第二部分厚的厚度。 沿堆叠方向的第三部分沿着该方向具有比第四部分厚的厚度。

公开(公告)号：US20120056524A1

公开(公告)日：2012-03-08

申请号：US13034128

申请日：2011-02-24

Applicant: Shinji SAITO ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinya Nunoue

Inventor： Shinji SAITO ,  Yasushi Hattori ,  Rei Hashimoto ,  Shinya Nunoue

IPC: H01J1/63

CPC classification number: H05B33/145

Abstract: A light emitter according to one embodiment has a fiber shape. And it includes a core portion containing a light emitting material, the material absorbing excitation light and emitting light having a wavelength longer than a wavelength of the excitation light. And also it includes a clad portion provided outside the core portion, the clad portion having a first region and second regions, the second regions being periodically formed in the first region, the second regions having a refractive index higher than a refractive index of a first region, the refractive index of the first region being equal to or higher than a refractive index of the core portion.

Abstract translation: 根据一个实施例的发光体具有纤维形状。 并且它包括含有发光材料的芯部分，该材料吸收激发光并发射具有比激发光的波长更长的波长的光。 并且还包括设置在芯部外侧的包层部分，所述包层部分具有第一区域和第二区域，所述第二区域周期性地形成在所述第一区域中，所述第二区域的折射率高于第一区域的折射率 第一区域的折射率等于或高于芯部分的折射率。

公开(公告)号：US20110216798A1

公开(公告)日：2011-09-08

申请号：US12873821

申请日：2010-09-01

Applicant: Maki SUGAI ,  Shinji SAITO ,  Rei HASHIMOTO ,  Yasushi HATTORI ,  Jongil HWANG ,  Masaki TOHYAMA ,  Shinya NUNOUE

Inventor： Maki SUGAI ,  Shinji SAITO ,  Rei HASHIMOTO ,  Yasushi HATTORI ,  Jongil HWANG ,  Masaki TOHYAMA ,  Shinya NUNOUE

IPC: H01S5/22 ,  H01S5/323 ,  H01L33/30

CPC classification number: H01L33/30 ,  H01S5/22 ,  H01S5/323

Abstract: Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.

Abstract translation: 实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。 在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。 凹槽的深度小于GaN衬底的厚度。 该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。 在半导体激光装置中，GaN衬底和半导体层的总厚度为100μm以上，脊的顶面与凹部的底面之间的距离为5μm以上且50μm以下 。

公开(公告)号：US20110222149A1

公开(公告)日：2011-09-15

申请号：US12874778

申请日：2010-09-02

Applicant: Shinji SAITO ,  Yasushi Hattori ,  Yoshiyuki Harada ,  Shinya Nunoue

Inventor： Shinji SAITO ,  Yasushi Hattori ,  Yoshiyuki Harada ,  Shinya Nunoue

IPC: G03B21/56 ,  F21V9/16 ,  H01J1/62 ,  B05D5/00

CPC classification number: G03B21/204 ,  F21K9/232 ,  F21K9/64 ,  H01L33/504

Abstract: According to the embodiments, an easy-to-fabricate light-emitting apparatus is provided in which a plurality of phosphors is disposed so as not to overlap each other. The light-emitting apparatus includes a light source that emits excitation light; a substrate having a protrusion and recess configuration where first planes and second planes which intersect the first planes are formed periodically; first phosphor layers formed on the first planes and absorbing the excitation light to emit a first fluorescence; and second phosphor layers formed on the second planes and absorbing the excitation light to emit a second fluorescence with a wavelength different from that of the first fluorescence.

Abstract translation: 根据实施例，提供了一种易于制造的发光装置，其中多个荧光体被布置为不彼此重叠。 发光装置包括发射激发光的光源; 具有突起和凹部构造的基板，其中周期性地形成与第一平面相交的第一平面和第二平面; 形成在第一平面上并吸收激发光以发射第一荧光的第一荧光体层; 以及形成在所述第二平面上并吸收所述激发光以发射具有与所述第一荧光的波长不同的波长的第二荧光的第二荧光体层。

公开(公告)号：US20120032215A1

公开(公告)日：2012-02-09

申请号：US13034329

申请日：2011-02-24

Applicant: Shinji SAITO ,  Jongil Hwang ,  Shinya Nunoue

Inventor： Shinji SAITO ,  Jongil Hwang ,  Shinya Nunoue

IPC: H01L33/60 ,  H01L33/32

CPC classification number: H01S5/164 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2304/04

Abstract: A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer.

Abstract translation: 一个实施例的半导体发光器件包括：衬底; n型氮化物半导体的n型层; n型半导体层上的氮化物半导体的有源层; 在有源层上的p型氮化物半导体的p型层。 p型层具有脊条形状。 该器件具有形成在n型半导体层，有源层和p型半导体层的端面上的氮化物半导体的端面层。 端面垂直于脊条形状的延伸方向。 端面层具有比有源层宽的带隙。 端面层在与p型层相邻的区域具有在5E16原子/ cm3至5E17原子/ cm3范围内的Mg浓度。

公开(公告)号：US20100178721A1

公开(公告)日：2010-07-15

申请号：US12539275

申请日：2009-08-11

Applicant: Shinji SAITO ,  Shinya Nunoue ,  Toshiyuki Oka

Inventor： Shinji SAITO ,  Shinya Nunoue ,  Toshiyuki Oka

IPC: H01L31/0256 ,  H01L21/316

CPC classification number: H01S5/0425 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00

Abstract: A semiconductor device includes a p-type nitride semiconductor layer (14); and a p-side electrode (18) including a palladium oxide film (30) connected to a surface of the nitride semiconductor layer (14).

Abstract translation: 半导体器件包括p型氮化物半导体层（14）; 和包括与氮化物半导体层（14）的表面连接的氧化钯膜（30）的p侧电极（18）。

公开(公告)号：US20120002137A1

公开(公告)日：2012-01-05

申请号：US13038728

申请日：2011-03-02

Applicant: Shinji SAITO ,  Yasushi Hattori ,  Shinya Nunoue

Inventor： Shinji SAITO ,  Yasushi Hattori ,  Shinya Nunoue

IPC: G02F1/13357

CPC classification number: G02B6/0055 ,  G02B5/0215 ,  G02B5/0231 ,  G02B5/0284 ,  G02B6/0096 ,  G02F1/133606 ,  G02F1/133615

Abstract: A liquid crystal display device of an embodiment has: a semiconductor laser diode emitting a first laser beam; a first reflecting unit configured to reflect the first laser beam and form a second laser beam having a one-dimensionally spread distribution; and a second reflecting unit configured to reflect the second laser beam and form a third laser beam having a two-dimensionally spread distribution. The device also has: an optical switch using liquid crystal, the optical switch being configured to control passage and blocking of the third laser beam; and a first scattering unit scattering the third laser beam.

Abstract translation: 实施例的液晶显示装置具有：发射第一激光束的半导体激光二极管; 第一反射单元，被配置为反射第一激光束并形成具有一维扩展分布的第二激光束; 以及第二反射单元，被配置为反射第二激光束并形成具有二维扩散分布的第三激光束。 该装置还具有：使用液晶的光开关，该光开关被配置为控制第三激光束的通过和阻塞; 以及散射第三激光束的第一散射单元。

公开(公告)号：US20080194050A1

公开(公告)日：2008-08-14

申请号：US12098309

申请日：2008-04-04

Applicant: Shinji SAITO ,  Shinya Nunoue

Inventor： Shinji SAITO ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L33/385 ,  H01L33/20 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, and a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction.

Abstract translation: 半导体发光元件具有层叠部，该层叠部具有由半导体构成的有源层，第一和第二包层各自设置为夹持有源层并由半导体构成，一对第一高反射层为 被配置成沿着与所述层叠部的层叠方向正交的第一方向夹持所述有源层，以及低反射层和第二高反射层，各自设置成沿与所述层叠方向正交的第二方向夹持所述有源层 并跨越第一个方向。

公开(公告)号：US20120056153A1

公开(公告)日：2012-03-08

申请号：US13035069

申请日：2011-02-25

Applicant: Shinji SAITO ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

Inventor： Shinji SAITO ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

IPC: H01L33/06 ,  H01L29/20

CPC classification number: H01L33/405 ,  B82Y20/00 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333

Abstract: A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

Abstract translation: 实施例的半导体器件包括：由p型氮化物半导体制成的半导体层; 形成在所述半导体层上的氧化物层，所述氧化物层由多晶氧化镍构成，所述氧化物层的厚度为3nm以下; 以及形成在氧化物层上的金属层。

公开(公告)号：US20090059986A1

公开(公告)日：2009-03-05

申请号：US12039303

申请日：2008-02-28

Applicant: Koichi TACHIBANA ,  Shinji SAITO ,  Shinya NUNOUE ,  Haruhiko YOSHIDA

Inventor： Koichi TACHIBANA ,  Shinji SAITO ,  Shinya NUNOUE ,  Haruhiko YOSHIDA

IPC: H01S5/30

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2218 ,  H01S2301/18

Abstract: A semiconductor light emitting element includes a first clad layer of a first conductivity type provided on a substrate; an active layer provided on the first clad layer; a second clad layer of a second conductivity type provided on the active layer, an upper portion of the second clad layer implements a ridge extending in a predetermined direction; a pair of first current block layers provided on the second clad layer sandwiching the ridge along the extending direction; and a pair of second current block layers provided between the first current block layers on the second clad layer and at sidewalls of the ridge to be contacted with the first current block layers, sandwiching selectively a region including an edge of the ridge, the second current block layers having a refractive index larger than the first current block layers at an emission peak wavelength of the active layer.

Abstract translation: 半导体发光元件包括设置在基板上的第一导电类型的第一覆盖层; 设置在所述第一包层上的有源层; 设置在所述有源层上的第二导电类型的第二覆盖层，所述第二覆层的上部实现沿预定方向延伸的脊; 一对第一电流阻挡层，设置在沿所述延伸方向夹着所述脊的所述第二覆层上; 以及一对第二电流阻挡层，设置在所述第二覆盖层上的所述第一电流阻挡层之间并且在所述脊的侧壁处与所述第一电流阻挡层接触，选择性地夹持包括所述脊的边缘的区域，所述第二电流 在有源层的发射峰值波长处具有大于第一电流阻挡层的折射率的阻挡层。