公开(公告)号：US08823016B2

公开(公告)日：2014-09-02

申请号：US13404553

申请日：2012-02-24

申请人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

IPC分类号： H01L29/24 ,  H01L33/12 ,  H01L33/32 ,  H01L29/12 ,  C30B29/40 ,  H01L33/00

CPC分类号： H01L33/06 ,  C30B29/406 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，具有主表面，第二导电类型的第二半导体层和设置在第一和第二半导体层之间的发光层。 主表面与发光层相对。 第一半导体层具有设置在主表面上的结构体。 结构体是凹陷或突起。 第一结构体的质心与最靠近第一结构的第二结构体的质心对齐。 hb，rb和Rb满足rb /（2·hb）＆nlE; 0.7和rb / Rb <1，其中hb是凹部的深度，rb是凹部的底部的宽度，Rb是 突起的宽度。

公开(公告)号：US07915630B2

公开(公告)日：2011-03-29

申请号：US12408810

申请日：2009-03-23

申请人： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Eiji Muramoto ,  Koichi Tachibana ,  Saori Abe ,  Jongil Hwang ,  Maki Sugai

发明人： Yasushi Hattori ,  Shinji Saito ,  Shinya Nunoue ,  Eiji Muramoto ,  Koichi Tachibana ,  Saori Abe ,  Jongil Hwang ,  Maki Sugai

IPC分类号： H01L33/00

CPC分类号： H01L33/507 ,  B82Y20/00 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/18 ,  H01S5/183 ,  H01S5/2027 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/42 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.

摘要翻译： 一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜 半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与​​激发光的波长不同的光的荧光材料，并且板状波长转换构件为 整个发射可见光。

公开(公告)号：US08456010B2

公开(公告)日：2013-06-04

申请号：US13035069

申请日：2011-02-25

申请人： Shinji Saito ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

发明人： Shinji Saito ,  Maki Sugai ,  Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L23/482

CPC分类号： H01L33/405 ,  B82Y20/00 ,  H01L33/32 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333

摘要： A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.

摘要翻译： 实施例的半导体器件包括：由p型氮化物半导体制成的半导体层; 形成在所述半导体层上的氧化物层，所述氧化物层由多晶氧化镍构成，所述氧化物层的厚度为3nm以下; 以及形成在氧化物层上的金属层。

公开(公告)号：US20120007113A1

公开(公告)日：2012-01-12

申请号：US13032907

申请日：2011-02-23

申请人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

发明人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

IPC分类号： H01L33/26

CPC分类号： H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。

公开(公告)号：US08829544B2

公开(公告)日：2014-09-09

申请号：US13406770

申请日：2012-02-28

申请人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

IPC分类号： H01L33/32 ,  H01L33/20 ,  H01L33/12

CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/48

摘要： According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.

摘要翻译： 根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。 基底层具有凹部，侧部和突起部的凹凸。 基础层的第一主表面具有覆盖区域。 基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。 到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。 到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

公开(公告)号：US08564006B2

公开(公告)日：2013-10-22

申请号：US13405985

申请日：2012-02-27

申请人： Koichi Tachibana ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

摘要： According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.

摘要翻译： 根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。 衬底是单晶。 半导体功能层设置在基板的主表面上并且包括氮化物半导体。 基板包括设置在主表面中的多个结构体。 多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。 多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度 。

公开(公告)号：US08432947B2

公开(公告)日：2013-04-30

申请号：US12719468

申请日：2010-03-08

申请人： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Shinya Nunoue

发明人： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Shinya Nunoue

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1039 ,  H01S5/16 ,  H01S5/164 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/3063 ,  H01S2301/18

摘要： A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion

摘要翻译： 一种半导体发光器件包括：分别包括第一和第二导电类型的第一和第二半导体层的层叠体，以及设置在其间的发光层; 分别与第一和第二半导体层接触的第一和第二电极。 发射的光在第一方向上相对的层叠体的第一和第二端面之间共振。 第二半导体层包括脊部和宽部。 沿着与第一方向垂直的第二方向和堆叠方向的脊部的宽度在第二电极侧比在发光层侧窄。 沿着第二方向的宽部的宽度比脊部宽。 沿着第二方向的第二电极的窄部的宽度比脊部的宽度窄

公开(公告)号：US08369375B2

公开(公告)日：2013-02-05

申请号：US12729636

申请日：2010-03-23

申请人： Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Maki Sugai ,  Shinya Nunoue

发明人： Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Maki Sugai ,  Shinya Nunoue

IPC分类号： H01S3/04 ,  H01S5/00 ,  H01S3/091

CPC分类号： H01S5/02296 ,  H01S5/005 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/02216 ,  H01S5/0228 ,  H01S5/32341 ,  H01S5/327

摘要： Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.

摘要翻译： 公开了一种半导体发光装置，其包括具有出光口的封装，设置在封装中的半导体激光二极管，并将具有落入紫外线范围内的第一波长的光照射到可见光，以及可见光发射极 所述荧光物质吸收从所述半导体激光二极管照射的光并发射具有与所述第一波长不同的第二波长的可见光，所述可见光发射极配置在所述激光二极管的光路上， 可见光发射器与封装件接触。

公开(公告)号：US20120298952A1

公开(公告)日：2012-11-29

申请号：US13406770

申请日：2012-02-28

申请人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

发明人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

IPC分类号： H01L33/06 ,  H01L21/20 ,  H01L29/38

CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/48

摘要： According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.

摘要翻译： 根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。 基底层具有凹部，侧部和突起部的凹凸。 基础层的第一主表面具有覆盖区域。 基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。 到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。 到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

公开(公告)号：US20110216798A1

公开(公告)日：2011-09-08

申请号：US12873821

申请日：2010-09-01

申请人： Maki SUGAI ,  Shinji SAITO ,  Rei HASHIMOTO ,  Yasushi HATTORI ,  Jongil HWANG ,  Masaki TOHYAMA ,  Shinya NUNOUE

发明人： Maki SUGAI ,  Shinji SAITO ,  Rei HASHIMOTO ,  Yasushi HATTORI ,  Jongil HWANG ,  Masaki TOHYAMA ,  Shinya NUNOUE

IPC分类号： H01S5/22 ,  H01S5/323 ,  H01L33/30

CPC分类号： H01L33/30 ,  H01S5/22 ,  H01S5/323

摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.

摘要翻译： 实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。 在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。 凹槽的深度小于GaN衬底的厚度。 该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。 在半导体激光装置中，GaN衬底和半导体层的总厚度为100μm以上，脊的顶面与凹部的底面之间的距离为5μm以上且50μm以下 。