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1.发明申请公开(公告)号：US20170205351A1
公开(公告)日：2017-07-20
申请号：US15432732
申请日：2017-02-14
IPC分类号： G01N21/64 , G02B6/132 , G02B6/122 , H01L31/16 , H01L33/32 , H01L33/00 , H01L31/0304 , G02B6/136 , G02B6/12
CPC分类号： G01N21/6454 , B01L3/502707 , B01L3/502715 , B01L2300/0654 , G01N15/1436 , G01N15/1459 , G01N15/1484 , G01N21/6428 , G01N21/645 , G01N2015/1006 , G01N2021/6439 , G01N2021/6482 , G01N2201/0873 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B6/132 , G02B6/136 , G02B2006/12078 , G02B2006/12123 , H01L27/14 , H01L27/15 , H01L31/03044 , H01L31/16 , H01L33/007 , H01L33/32
摘要： A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.
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2.发明申请公开(公告)号：US20170205349A1
公开(公告)日：2017-07-20
申请号：US15432696
申请日：2017-02-14
CPC分类号： G01N21/6454 , B01L3/502707 , B01L3/502715 , B01L2300/0654 , G01N15/1436 , G01N15/1459 , G01N15/1484 , G01N21/6428 , G01N21/645 , G01N2015/1006 , G01N2021/6439 , G01N2021/6482 , G01N2201/0873 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B6/132 , G02B6/136 , G02B2006/12078 , G02B2006/12123 , H01L27/14 , H01L27/15 , H01L31/03044 , H01L31/16 , H01L33/007 , H01L33/32
摘要： A semiconductor structure includes a first optical waveguide and a second optical waveguide located on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate.
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3.发明授权公开(公告)号：US09995682B2
公开(公告)日：2018-06-12
申请号：US15432719
申请日：2017-02-14
IPC分类号： G01N21/64 , G02B6/132 , H01L31/16 , H01L33/32 , H01L33/00 , H01L31/0304 , G02B6/13 , G02B6/12 , G02B6/136 , G02B6/122 , H01L27/14 , H01L27/15
CPC分类号： G01N21/6454 , B01L3/502707 , B01L3/502715 , B01L2300/0654 , G01N15/1436 , G01N15/1459 , G01N15/1484 , G01N21/6428 , G01N21/645 , G01N2015/1006 , G01N2021/6439 , G01N2021/6482 , G01N2201/0873 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B6/132 , G02B6/136 , G02B2006/12078 , G02B2006/12123 , H01L27/14 , H01L27/15 , H01L31/03044 , H01L31/16 , H01L33/007 , H01L33/32
摘要： A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.
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4.发明授权公开(公告)号：US09983133B2
公开(公告)日：2018-05-29
申请号：US15432732
申请日：2017-02-14
IPC分类号： H01L31/16 , H01L31/0304 , H01L33/32 , G01N21/64 , G02B6/132 , G02B6/136 , G02B6/122 , G02B6/12 , H01L33/00 , H01L27/14 , H01L27/15
CPC分类号： G01N21/6454 , B01L3/502707 , B01L3/502715 , B01L2300/0654 , G01N15/1436 , G01N15/1459 , G01N15/1484 , G01N21/6428 , G01N21/645 , G01N2015/1006 , G01N2021/6439 , G01N2021/6482 , G01N2201/0873 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B6/132 , G02B6/136 , G02B2006/12078 , G02B2006/12123 , H01L27/14 , H01L27/15 , H01L31/03044 , H01L31/16 , H01L33/007 , H01L33/32
摘要： A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.
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公开(公告)号：US20140374695A1
公开(公告)日：2014-12-25
申请号：US14041922
申请日：2013-09-30
IPC分类号： G01N33/487
CPC分类号： G01N33/48721 , B01L3/502707 , B01L2300/0645 , B01L2300/0896 , B81B2201/0214 , B81B2203/0353 , B81C1/00206 , H01L29/0669 , H01L29/413
摘要： An anti-retraction capping material is formed on a surface of a nanowire that is located upon a dielectric membrane. A gap is then formed into the anti-retraction capping material and nanowire forming first and second capped nanowire structures of a nanodevice. The nanodevice can be used for recognition tunneling measurements including, for example DNA sequencing. The anti-retraction capping material serves as a mobility barrier to pin, i.e., confine, a nanowire portion of each of the first and second capped nanowire structures in place, allowing long-term structural stability. In some embodiments, interelectrode leakage through solution during recognition tunneling measurements can be minimized.
摘要翻译： 在位于电介质膜上的纳米线的表面上形成防回缩封盖材料。 然后形成纳米线形成第一和第二封端的纳米线结构的抗回缩封盖材料和纳米线的间隙。 纳米器件可用于识别隧道测量，包括例如DNA测序。 抗回缩封盖材料用作将第一和第二封端的纳米线结构中的每一个的纳米线部分引导，即限制在适当位置的迁移率屏障，从而允许长期的结构稳定性。 在一些实施例中，可以最小化在识别隧道测量期间通过溶液的电极间泄漏。
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6.发明授权公开(公告)号：US09989467B2
公开(公告)日：2018-06-05
申请号：US15432696
申请日：2017-02-14
IPC分类号： H01L31/16 , G01N21/64 , G02B6/132 , H01L33/32 , G02B6/122 , G02B6/12 , H01L33/00 , H01L31/0304 , H01L27/14 , H01L27/15
CPC分类号： G01N21/6454 , B01L3/502707 , B01L3/502715 , B01L2300/0654 , G01N15/1436 , G01N15/1459 , G01N15/1484 , G01N21/6428 , G01N21/645 , G01N2015/1006 , G01N2021/6439 , G01N2021/6482 , G01N2201/0873 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B6/132 , G02B6/136 , G02B2006/12078 , G02B2006/12123 , H01L27/14 , H01L27/15 , H01L31/03044 , H01L31/16 , H01L33/007 , H01L33/32
摘要： A semiconductor structure includes a first optical waveguide and a second optical waveguide located on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate.
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7.发明申请公开(公告)号：US20170205350A1
公开(公告)日：2017-07-20
申请号：US15432719
申请日：2017-02-14
IPC分类号： G01N21/64 , G02B6/132 , G02B6/13 , H01L31/16 , G02B6/12 , H01L33/32 , H01L33/00 , H01L31/0304 , G02B6/136 , G02B6/122
CPC分类号： G01N21/6454 , B01L3/502707 , B01L3/502715 , B01L2300/0654 , G01N15/1436 , G01N15/1459 , G01N15/1484 , G01N21/6428 , G01N21/645 , G01N2015/1006 , G01N2021/6439 , G01N2021/6482 , G01N2201/0873 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B6/132 , G02B6/136 , G02B2006/12078 , G02B2006/12123 , H01L27/14 , H01L27/15 , H01L31/03044 , H01L31/16 , H01L33/007 , H01L33/32
摘要： A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.
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8.发明授权Cointegration of optical waveguides, microfluidics, and electronics on sapphire substrates 有权蓝宝石衬底上的光波导，微流体和电子的协整公开(公告)号：US09588289B1
公开(公告)日：2017-03-07
申请号：US15002041
申请日：2016-01-20
CPC分类号： G01N21/6454 , B01L3/502707 , B01L3/502715 , B01L2300/0654 , G01N15/1436 , G01N15/1459 , G01N15/1484 , G01N21/6428 , G01N21/645 , G01N2015/1006 , G01N2021/6439 , G01N2021/6482 , G01N2201/0873 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B6/132 , G02B6/136 , G02B2006/12078 , G02B2006/12123 , H01L27/14 , H01L27/15 , H01L31/03044 , H01L31/16 , H01L33/007 , H01L33/32
摘要： A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.
摘要翻译： 形成半导体结构的方法包括在蓝宝石衬底上形成第一光波导和第二光波导。 第一光波导和第二光波导均包括氮化镓（GaN）的核心部分和横向包围核心部分的包层。 包覆层包括折射率小于蓝宝石衬底的折射率的材料。 该方法还包括蚀刻包层的一部分以在其中形成微流体通道，并在第一光波导，第二光波导和微流体通道的顶表面上形成覆盖层。
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公开(公告)号：US09188578B2
公开(公告)日：2015-11-17
申请号：US14041922
申请日：2013-09-30
IPC分类号： G01N33/487 , B01L3/00 , B81C1/00 , H01L29/06 , H01L29/41
CPC分类号： G01N33/48721 , B01L3/502707 , B01L2300/0645 , B01L2300/0896 , B81B2201/0214 , B81B2203/0353 , B81C1/00206 , H01L29/0669 , H01L29/413
摘要： An anti-retraction capping material is formed on a surface of a nanowire that is located upon a dielectric membrane. A gap is then formed into the anti-retraction capping material and nanowire forming first and second capped nanowire structures of a nanodevice. The nanodevice can be used for recognition tunneling measurements including, for example DNA sequencing. The anti-retraction capping material serves as a mobility barrier to pin, i.e., confine, a nanowire portion of each of the first and second capped nanowire structures in place, allowing long-term structural stability. In some embodiments, interelectrode leakage through solution during recognition tunneling measurements can be minimized.
摘要翻译： 在位于电介质膜上的纳米线的表面上形成防回缩封盖材料。 然后形成纳米线形成第一和第二封端的纳米线结构的抗回缩封盖材料和纳米线的间隙。 纳米器件可用于识别隧道测量，包括例如DNA测序。 抗回缩封盖材料用作将第一和第二封端的纳米线结构中的每一个的纳米线部分引导，即限制在适当位置的迁移率屏障，从而允许长期的结构稳定性。 在一些实施例中，可以最小化在识别隧道测量期间通过溶液的电极间泄漏。
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公开(公告)号：US09097698B2
公开(公告)日：2015-08-04
申请号：US14608781
申请日：2015-01-29
IPC分类号： G01N33/487 , H01L29/06 , H01L29/41
CPC分类号： G01N33/48721 , B01L3/502707 , B01L2300/0645 , B01L2300/0896 , B81B2201/0214 , B81B2203/0353 , B81C1/00206 , H01L29/0669 , H01L29/413
摘要： An anti-retraction capping material is formed on a surface of a nanowire that is located upon a dielectric membrane. A gap is then formed into the anti-retraction capping material and nanowire forming first and second capped nanowire structures of a nanodevice. The nanodevice can be used for recognition tunneling measurements including, for example DNA sequencing. The anti-retraction capping material serves as a mobility barrier to pin, i.e., confine, a nanowire portion of each of the first and second capped nanowire structures in place, allowing long-term structural stability. In some embodiments, interelectrode leakage through solution during recognition tunneling measurements can be minimized.
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