发明申请
- 专利标题: NANOGAP DEVICE WITH CAPPED NANOWIRE STRUCTURES
- 专利标题(中): 带纳米纳米结构的纳米器件
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申请号: US14041922申请日: 2013-09-30
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公开(公告)号: US20140374695A1公开(公告)日: 2014-12-25
- 发明人: Yann A. N. Astier , Jingwei Bai , Satyavolu S. Papa Rao , Kathleen B. Reuter , Joshua T. Smith
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: G01N33/487
- IPC分类号: G01N33/487
摘要:
An anti-retraction capping material is formed on a surface of a nanowire that is located upon a dielectric membrane. A gap is then formed into the anti-retraction capping material and nanowire forming first and second capped nanowire structures of a nanodevice. The nanodevice can be used for recognition tunneling measurements including, for example DNA sequencing. The anti-retraction capping material serves as a mobility barrier to pin, i.e., confine, a nanowire portion of each of the first and second capped nanowire structures in place, allowing long-term structural stability. In some embodiments, interelectrode leakage through solution during recognition tunneling measurements can be minimized.
公开/授权文献
- US09188578B2 Nanogap device with capped nanowire structures 公开/授权日:2015-11-17
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