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公开(公告)号：US12057678B2
公开(公告)日：2024-08-06
申请号：US18137462
申请日：2023-04-21
发明人： Susumu Noda , Tomoaki Koizumi , Kei Emoto
CPC分类号： H01S5/2009 , H01S5/04253 , H01S5/04254 , H01S5/11 , H01S5/185 , H01S5/2086 , H01S5/2095 , H01S5/320225 , H01S5/320275 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: growing a first cladding layer with a {0001} growth plane; growing a guide layer on the first cladding layer; forming holes which are two-dimensionally periodically arranged within the guide layer; etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and growing an active layer and a second cladding layer on the first embedding layer, The step includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.
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公开(公告)号：US11990730B2
公开(公告)日：2024-05-21
申请号：US16973602
申请日：2019-06-19
发明人： Yuta Aoki , Kazuyoshi Hirose , Satoru Okawara
CPC分类号： H01S5/11 , H01S5/18305 , H01S5/185 , H01S5/34333
摘要： A light-emitting device according to an embodiment includes a structure for increasing an optical confinement coefficient of a layer forming a resonance mode. The light-emitting device includes a first cladding layer, an active layer, a second cladding layer, a resonance mode formation layer, and a high refractive index layer. The first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain nitride semiconductors. The high refractive index layer has a refractive index higher than that of any of the first cladding layer, the active layer, the second cladding layer, and the resonance mode formation layer, and has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated.
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公开(公告)号：US11973318B2
公开(公告)日：2024-04-30
申请号：US17499847
申请日：2021-10-12
CPC分类号： H01S5/34333 , H01S5/11 , H01S5/185 , H01S5/34346 , G03B21/2033 , H01S5/0218 , H01S5/04257
摘要： A light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a columnar part, wherein the columnar part includes a first GaN layer having a first conductivity type, a second GaN layer having a second conductivity type different from the first conductivity type, and a light emitting layer disposed between the first GaN layer and the second GaN layer, the first GaN layer is disposed between the substrate and the light emitting layer, the light emitting layer has a first well layer as an InGaN layer, the first GaN layer has a c-face region, the first GaN layer has a crystal structure of a cubical crystal, and has a first layer constituting the c-face region, and a second layer as a GaN layer having a crystal structure of a hexagonal crystal is disposed between the first layer and the first well layer.
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公开(公告)号：US12051883B2
公开(公告)日：2024-07-30
申请号：US17787976
申请日：2020-12-23
CPC分类号： H01S5/0085 , G02F1/0151 , G02F1/025 , H01S5/026 , H01S5/0265 , H01S5/11 , H01S5/185 , G02F2201/12 , H01S5/18
摘要： This disclosure relates to a spatial light modulator, etc., the spatial light modulator being capable of dynamically controlling the phase distribution of light, and provided with a structure having a smaller pixel arrangement period and suitable for high-speed operation. The spatial light modulator includes a substrate. The substrate has a front surface, a back surface, and through-holes arranged one-dimensionally or two-dimensionally and penetrating between the front surface and the back surface. The spatial light modulator further includes layered structures each covering the inner walls of the through-holes. Each layered structure includes a first electroconductive layer on the inner wall, a dielectric layer on the first electroconductive layer and having optical transparency, and a second electroconductive layer on the dielectric layer and having optical transparency. At least one of the first and second electroconductive layers is electrically isolated for each group including one or more through-holes.
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公开(公告)号：US11923655B2
公开(公告)日：2024-03-05
申请号：US17269313
申请日：2019-08-27
CPC分类号： H01S5/026 , H01S5/18305 , H01S5/185 , H01S5/11 , H01S5/34313 , H01S5/34353
摘要： The present embodiment relates to a light emission device capable of removing zero-order light from output light of an S-iPM laser. The light emission device comprises an active layer and a phase modulation layer. The phase modulation layer includes a base layer and a plurality of modified refractive index regions. In a state in which a virtual square lattice is set on the phase modulation layer, a center of gravity of each modified refractive index region is separated from a corresponding lattice point, and a rotation angle around each lattice point that decides a position of the center of gravity of each modified refractive index region is set according to a phase distribution for forming an optical image. A lattice spacing and an emission wavelength satisfy a condition of M-point oscillation in a reciprocal lattice space of the phase modulation layer. A magnitude of at least one of in-plane wavenumber vectors in four directions formed in the reciprocal lattice space and each including a wavenumber spread corresponding to an angle spread of the output light is smaller than 2π/λ.
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公开(公告)号：US20240047944A1
公开(公告)日：2024-02-08
申请号：US18266311
申请日：2021-10-29
发明人： Naoya KONO , Yuki ITO , Naoki FUJIWARA , Susumu NODA , Takuya INOUE , Menaka De ZOYSA , Kenji ISHIZAKI
CPC分类号： H01S5/11 , H01S5/185 , H01S5/04254 , H01S5/04253
摘要： A photonic-crystal surface emitting laser includes a first semiconductor layer, a photonic crystal layer having a refractive index higher than a refractive index of the first semiconductor layer and provided on the first semiconductor layer, and an active layer provided opposite to the first semiconductor layer with respect to the photonic crystal layer. The photonic crystal layer has a first region and a plurality of second regions each having a refractive index different from a refractive index of the first region and periodically disposed in the first region in a plane of the photonic crystal layer. The second regions extend from the photonic crystal layer to the first semiconductor layer.
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公开(公告)号：US11870218B2
公开(公告)日：2024-01-09
申请号：US16972825
申请日：2019-06-04
CPC分类号： H01S5/185 , H01S5/005 , H01S5/04252 , H01S5/04254 , H01S5/18302 , H01S5/34333 , H01S5/34326
摘要： A light emission device of one embodiment reduces zero-order light included in output of an S-iPM laser. The light emission device includes a light emission unit and a phase modulation layer. The phase modulation layer has a base layer and modified refractive index regions each including modified refractive index elements. In each unit constituent region centered on a lattice point of an imaginary square lattice set on the phase modulation layer, the distance from the corresponding lattice point to each of the centers of gravity of the modified refractive index elements is greater than 0.30 times and is not greater than 0.50 times of the lattice spacing. In addition, the distance from the corresponding lattice point to the center of gravity of the modified refractive index elements as a whole is greater than 0 and is not greater than 0.30 times of the lattice spacing.
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8.发明公开公开(公告)号：US20230283049A1
公开(公告)日：2023-09-07
申请号：US18137462
申请日：2023-04-21
发明人： Susumu NODA , Tomoaki KOIZUMI , Kei EMOTO
CPC分类号： H01S5/2009 , H01S5/04254 , H01S5/11 , H01S5/34333 , H01S5/185 , H01S5/320225 , H01S5/320275 , H01S5/04253 , H01S5/2095 , H01S5/2086 , H01S2304/04 , H01S2301/176
摘要： A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: growing a first cladding layer with a {0001} growth plane; growing a guide layer on the first cladding layer; forming holes which are two-dimensionally periodically arranged within the guide layer; etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and growing an active layer and a second cladding layer on the first embedding layer, The step includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.
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9.发明公开公开(公告)号：US20240364073A1
公开(公告)日：2024-10-31
申请号：US18682606
申请日：2022-08-04
IPC分类号： H01S5/02 , H01S5/02326 , H01S5/028 , H01S5/185
CPC分类号： H01S5/0201 , H01S5/02326 , H01S5/0282 , H01S5/185 , H01S2301/176
摘要： A method for producing a multiplicity of semiconductor laser chips, the method including growing a semiconductor layer having an active region, forming a multiplicity of laser chip regions, each laser chip region having a part of the active region, a part of the semiconductor layer, a first mirror and a second mirror, applying a sacrificial layer to the laser chip regions, shaping at least one support region per laser chip region within the sacrificial layer, applying an auxiliary carrier to the sacrificial layer, singulating the laser chip regions into semiconductor laser chips on the auxiliary carrier, each semiconductor laser chip having a first region of the semiconductor layer and a second region of the semiconductor layer, the first region and the second region having mutually different extents parallel to the main plane of extent of the semiconductor layer, and the first mirror and the second mirror adjoining the second region, removing the sacrificial layer, and simultaneously transferring at least some of the semiconductor laser chips to a carrier. A semiconductor laser chip is additionally specified.
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公开(公告)号：US11967800B2
公开(公告)日：2024-04-23
申请号：US18199960
申请日：2023-05-21
发明人： Chien Hung Pan , Cheng Zu Wu
CPC分类号： H01S5/11 , H01S5/1215 , H01S5/124 , H01S5/183 , H01S5/185 , H01S5/3211 , H01S2304/04
摘要： The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula:
∧
=
m
λ
2
⋆
n
eff
;
in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula:
∧
=
o
λ
2
⋆
n
eff
.
Wherein ∧ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.
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