公开(公告)号：US12034274B2

公开(公告)日：2024-07-09

申请号：US18111686

申请日：2023-02-20

申请人： Sony Corporation

发明人： Tatsushi Hamaguchi ,  Jugo Mitomo ,  Hiroshi Nakajima ,  Masamichi Ito ,  Susumu Sato

IPC分类号： H01S5/183 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343 ,  H01S5/042

CPC分类号： H01S5/18327 ,  H01S5/0207 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2022 ,  H01S5/2219 ,  H01S5/34333 ,  H01S5/04253 ,  H01S5/04256 ,  H01S2301/176 ,  H01S2304/12

摘要： A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

公开(公告)号：US12015248B2

公开(公告)日：2024-06-18

申请号：US18316000

申请日：2023-05-11

申请人： KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION ,  KOALA TECH INC.

发明人： Chihaya Adachi ,  Sangarange Don Atula Sandanayaka ,  Toshinori Matsushima ,  Kou Yoshida ,  Jean-Charles Ribierre ,  Fatima Bencheikh ,  Kenichi Goushi ,  Takashi Fujihara

IPC分类号： H01S5/36 ,  H01S3/13 ,  H01S5/042 ,  H01S5/12

CPC分类号： H01S5/36 ,  H01S3/1305 ,  H01S5/04253 ,  H01S5/1215 ,  H01S5/1231

摘要： Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.

公开(公告)号：US12080991B2

公开(公告)日：2024-09-03

申请号：US17262839

申请日：2019-07-26

申请人： SUZHOU LEKIN SEMICONDUCTOR CO., LTD.

发明人： Yong Gyeong Lee ,  Se Yeon Jung ,  Tae Yong Lee

IPC分类号： H01S3/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/42

CPC分类号： H01S5/04254 ,  H01S5/04253 ,  H01S5/04256 ,  H01S5/18311 ,  H01S5/18361 ,  H01S5/423

摘要： An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to an embodiment may comprise: a substrate; a first reflective layer arranged on the substrate; an active layer arranged on the first reflective layer; an aperture layer arranged on the active layer and comprising an opening; a second reflective layer arranged on the active layer; a transparent electrode layer arranged on the second reflective layer; and a metal electrode layer arranged on the transparent electrode layer. The transparent electrode layer may comprise a first area perpendicularly overlapping the opening and multiple second areas extending from the first area. The multiple second areas may be arranged outside the opening along the circumferential direction of the opening and spaced apart from each other. The multiple second areas may be arranged and spaced apart from each other so as to correspond to the circumference of the opening. The metal electrode layer may electrically contact the second reflective layer between the multiple second areas.

公开(公告)号：US20240283217A1

公开(公告)日：2024-08-22

申请号：US18136923

申请日：2023-04-20

申请人： HLJ TECHNOLOGY CO., LTD.

发明人： LI-HUNG LAI ,  LI-WEN LAI

IPC分类号： H01S5/042 ,  H01S5/183

CPC分类号： H01S5/04253 ,  H01S5/183

摘要： A surface-emitting laser device with a conductive thin film includes a first mirror layer, an active layer, a P-type conductive layer, an insulating layer, a thin film structure and a second mirror layer. The active layer is located on the first mirror layer. The P-type conductive layer is located on a surface of a part of the active layer. The insulating layer is located on the first mirror layer and covers the P-type conductive layer, and the insulating layer is provided with a light-emitting hole corresponding to the P-type conductive layer. The thin film structure has conductivity and light transmission. The thin film structure includes a filling part and a covering part. The filling part fills the light-emitting hole and the covering part is located on the insulating layer. The second mirror layer is located on the thin film structure and corresponds to the light-emitting hole.

公开(公告)号：US12057678B2

公开(公告)日：2024-08-06

申请号：US18137462

申请日：2023-04-21

申请人： Kyoto University ,  Stanley Electric Co., Ltd.

发明人： Susumu Noda ,  Tomoaki Koizumi ,  Kei Emoto

IPC分类号： H01S5/20 ,  H01S5/042 ,  H01S5/11 ,  H01S5/185 ,  H01S5/32 ,  H01S5/343

CPC分类号： H01S5/2009 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/11 ,  H01S5/185 ,  H01S5/2086 ,  H01S5/2095 ,  H01S5/320225 ,  H01S5/320275 ,  H01S5/34333 ,  H01S2301/176 ,  H01S2304/04

摘要： A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: growing a first cladding layer with a {0001} growth plane; growing a guide layer on the first cladding layer; forming holes which are two-dimensionally periodically arranged within the guide layer; etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and growing an active layer and a second cladding layer on the first embedding layer, The step includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.

公开(公告)号：US11979000B2

公开(公告)日：2024-05-07

申请号：US16964072

申请日：2019-01-23

申请人： OSRAM OLED GmbH

发明人： Tilman Rügheimer ,  Hubert Halbritter

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/024 ,  H01S5/042 ,  H01S5/183 ,  H01S5/42

CPC分类号： H01S5/02461 ,  H01S5/0207 ,  H01S5/0217 ,  H01S5/02469 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/1833 ,  H01S5/18377 ,  H01S5/021 ,  H01S5/0216 ,  H01S5/04256 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/423

摘要： Surface-emitting semiconductor laser chip (1) comprising a carrier (20), a layer stack (10) arranged on the carrier (20) and having a layer plane (L) extending perpendicularly to the stacking direction (R), a front side contact (310) and a rear side contact (320), in which in operation a predetermined distribution of a current density (I) is achieved by means of current constriction in the layer stack (10), wherein in the carrier (20) an electrical through-connection (200) is provided, which extends from a bottom surface (20a) of the carrier (20) facing away from the layer stack (10) to a surface of the carrier (20) facing the layer stack (10), and the distribution of the current density (I) is significantly influenced by the shape and size of the cross-section of the through-connection (200) parallel to the layer plane (L) on the surface facing the layer stack.

公开(公告)号：US20230283050A1

公开(公告)日：2023-09-07

申请号：US18316000

申请日：2023-05-11

申请人： KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION ,  KOALA TECH INC.

发明人： Chihaya ADACHI ,  Sangarange Don Atula SANDANAYAKA ,  Toshinori MATSUSHIMA ,  Kou YOSHIDA ,  Jean-Charles RIBIERRE ,  Fatima BENCHEIKH ,  Kenichi GOUSHI ,  Takashi FUJIHARA

IPC分类号： H01S5/36 ,  H01S5/12 ,  H01S5/042 ,  H01S3/13

CPC分类号： H01S5/36 ,  H01S5/1215 ,  H01S5/1231 ,  H01S5/04253 ,  H01S3/1305

摘要： Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.

公开(公告)号：US11695253B2

公开(公告)日：2023-07-04

申请号：US17720794

申请日：2022-04-14

申请人： OSRAM OLED GmbH

发明人： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC分类号： H01S5/22 ,  H01S5/32 ,  H01S5/042 ,  H01S5/323

CPC分类号： H01S5/22 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2301/16

摘要： A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

公开(公告)号：US11901695B2

公开(公告)日：2024-02-13

申请号：US17130309

申请日：2020-12-22

申请人： Seiko Epson Corporation

发明人： Takashi Miyata

IPC分类号： H01S5/042 ,  H01S5/20 ,  H01S5/11 ,  H01S5/34 ,  H01S5/02 ,  H01S5/40 ,  H01S5/185 ,  H01S5/42 ,  G03B21/20 ,  B82Y20/00

CPC分类号： H01S5/04252 ,  G03B21/2033 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/11 ,  H01S5/2054 ,  H01S5/341 ,  B82Y20/00 ,  H01S5/021 ,  H01S5/04257 ,  H01S5/185 ,  H01S5/4012 ,  H01S5/4093 ,  H01S5/42 ,  H01S2301/176

摘要： A light emitting device includes: a substrate; a laminated structure that is provided on the substrate and that includes a plurality of columnar portions; and an electrode provided at an opposite side of the laminated structure from the substrate. The columnar portion includes a first semiconductor layer, a second semiconductor layer of a conductivity type different from that of the first semiconductor layer, and a light emitting layer located between the first semiconductor layer and the second semiconductor layer. The electrode is connected to the second semiconductor layers in the plurality of columnar portions, and includes a first electrode layer formed of a material that has a work function smaller than that of the second semiconductor layer, and a second electrode layer that is connected to the first electrode layer and that has a work function smaller than that of the first electrode layer. An interface between the first electrode layer and the second electrode layer has an uneven shape.

公开(公告)号：US11881684B2

公开(公告)日：2024-01-23

申请号：US17685820

申请日：2022-03-03

申请人： NICHIA CORPORATION

发明人： Yoshitaka Nakatsu

IPC分类号： H01S5/343 ,  H01S5/20 ,  H01S5/22 ,  H01S5/042

CPC分类号： H01S5/34333 ,  H01S5/04253 ,  H01S5/2031 ,  H01S5/2206 ,  H01S5/34346 ,  H01S5/2009 ,  H01S2304/04

摘要： A semiconductor laser element includes: an n-side semiconductor layer formed of a nitride semiconductor; an active layer disposed on or above the n-side semiconductor layer and formed of a nitride semiconductor; a p-side semiconductor layer disposed on the active layer, formed of a nitride semiconductor, and including: an undoped first part disposed in contact with an upper face of the active layer and comprising at least one semiconductor layer, an electron barrier layer disposed in contact with an upper face of the first part, containing a p-type impurity, and having a band gap energy that is larger than a band gap energy of the first part, and a second part disposed in contact with the upper face of the electron barrier layer and comprising at least one p-type semiconductor layer containing a p-type impurity; and a p-electrode disposed in contact with the upper face of the second part.