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公开(公告)号：US12062740B2
公开(公告)日：2024-08-13
申请号：US17260726
申请日：2019-07-17
发明人： Youn Joon Sung
CPC分类号： H01L33/382 , H01L33/14 , H01L33/62
摘要： An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, and a plurality of first recesses and second recesses which extend through the second conductive semiconductor layer and the active layer and are arranged up to one region of the first conductive semiconductor layer, a first electrode disposed inside each of the first recesses and second recesses to be electrically connected to the first conductive semiconductor layer, and a second electrode electrically connected to the second conductive semiconductor layer, wherein the first conductive semiconductor layer, the active layer, the second conductive semiconductor layer include aluminum, and the number of most adjacent recesses in the plurality of second recesses is fewer than that in the plurality of first recesses and the plurality of second recesses include multiple recesses, each having an area larger than that of each of the plurality of first recesses.
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公开(公告)号：US11984703B2
公开(公告)日：2024-05-14
申请号：US17054405
申请日：2019-05-10
发明人： Jeong Sik Lee
CPC分类号： H01S5/18338 , H01S5/0425
摘要： The embodiment relates to a surface emitting laser device and a light emitting device including the same.
The surface-emitting laser device according to the embodiment includes a first reflective layer, an active region disposed on the first reflective layer, a plurality of aperture regions disposed on the active region, including an aperture and an insulating region, a second reflective layer disposed on the aperture region, and a first electrode and a second electrode electrically connected to the first reflective layer and the second reflective layer, respectively.
In the aperture region, an outer periphery of the insulating region may have a circular shape, and an outer periphery of the aperture may have a polygonal shape.-
公开(公告)号：US11973307B2
公开(公告)日：2024-04-30
申请号：US17043338
申请日：2019-04-12
发明人： Se Yeon Jung , Yong Gyeong Lee , Seung Hwan Kim
CPC分类号： H01S5/0021 , H01S5/0425 , H01S5/04252 , H01S5/04253 , H01S5/18 , H01S5/423 , H01S5/18377 , H01S5/18394
摘要： This surface-emitting laser device comprises: a first reflective layer; an active region disposed over the first reflective layer; an aperture region which is disposed over the active region and comprises an aperture and an insulating region; a second reflective layer disposed over the aperture region; and a second electrode electrically connected to the second reflective layer. The second electrode comprises first to sixth conductive layers. The first conductive layer may comprises Ti, and the sixth conductive layer may comprise Au.
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公开(公告)号：US11961943B2
公开(公告)日：2024-04-16
申请号：US17461601
申请日：2021-08-30
发明人： Youn Joon Sung , Min Sung Kim , Eun Dk Lee
CPC分类号： H01L33/38 , H01L33/12 , H01L33/32 , H01L33/382 , H01L2933/0016
摘要： A semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode provided on a first surface of the first semiconductor layer; a second electrode provided on a first surface of the second semiconductor layer, the active layer being provided between the first surface of the first semiconductor layer and a second surface of the second semiconductor layer that is opposite to the first surface of the second semiconductor layer; a first insulation layer provided on the first surface of the first semiconductor layer, the first surface of the second semiconductor layer, and a side surface of the active layer; a first cover electrode provided on the first electrode; a second cover electrode provided on the second electrode, a second insulation layer provided on the first cover electrode, the second cover electrode, and the first insulation layer, wherein: the second insulation layer includes a first opening over the first cover electrode and a second opening over the second cover electrode, and a plan view of the semiconductor includes a light emitting region that includes a surface of the second cover electrode in the second opening of the second insulation layer, and a non-light emitting region that includes a surface of the first cover electrode in the second opening of the first insulation layer, and a first area of the non-light emitting region is smaller than a second area of the light emitting region.
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公开(公告)号：US11569416B2
公开(公告)日：2023-01-31
申请号：US16331015
申请日：2017-09-11
发明人： Youn Joon Sung , Min Sung Kim , Eun Dk Lee
摘要： An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode. The semiconductor structure includes a first surface extending from an upper surface of the first conductive semiconductor layer where the first electrode is disposed to a side surface of the active layer and an upper surface of the second conductive semiconductor where the second electrode is disposed. The first insulation layer is disposed on the first surface to be spaced apart from the first electrode. The first insulation layer is disposed on the first surface to overlap with the first cover electrode in a first direction perpendicular to the upper surface of the first conductive semiconductor layer.
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公开(公告)号：US11469354B2
公开(公告)日：2022-10-11
申请号：US16641771
申请日：2018-08-31
发明人： Sang Youl Lee , Ki Man Kang , Do Yub Kim , Eun Dk Lee
IPC分类号： H01L33/50 , F21S41/153 , F21S41/19 , H01L33/00 , H01L27/15 , H01L33/38 , H01L33/44 , H01L33/58 , H01L33/62 , H01L33/06 , H01L33/30
摘要： Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 μm to 40 μm and the thickness of the wavelength conversion layer is 1 μm to 50 μm.
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7.发明授权公开(公告)号：US11367819B2
公开(公告)日：2022-06-21
申请号：US15506551
申请日：2015-07-16
发明人： Woo Sik Lim
IPC分类号： H01L33/62 , H01L27/15 , H01L33/00 , H01L25/075 , H01L33/06 , H01L33/22 , H01L33/30 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/50 , H01L33/56 , H01L33/38
摘要： A light-emitting device array according to an embodiment includes a plurality of light-emitting devices connected to each other, each of the light-emitting devices comprising a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a (1-1)th electrode connected to the exposed first conductive semiconductor layer; a (1-2)th electrode connected to the second conductive semiconductor layer; (2-1)th and (2-2)th electrodes connected to the (1-1)th and (1-2)th electrodes, respectively; a first bonding layer disposed between the (1-1)th electrode and the (2-1)th electrode; and a second bonding layer disposed between the (1-2)th electrode and the (2-2)th electrode wherein the (2-1)th electrode of the first light-emitting device and the (2-2)th electrode of the second light-emitting device are integrated, and the (2-2)th electrode of the first light-emitting device and the (2-1)th electrode of the second light-emitting device are integrated.
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公开(公告)号：US11342487B2
公开(公告)日：2022-05-24
申请号：US16646700
申请日：2018-09-14
发明人： Won Jung Kim , Ki Seok Kim , June O Song , Chang Man Lim
摘要： A light emitting device package according to an embodiment may comprise: a first package body including a first and a second opening; a light emitting device disposed on the first package body and including a first and a second bonding part; and a first resin disposed between the first package body and the light emitting device. The light emitting device may comprise one surface on which the first and second bonding parts are disposed, the first bonding part may comprise a first side surface and a lower surface facing the first package body, and the second bonding part may comprise a second side surface opposite to the first side surface, and a lower surface facing the first package body. The first resin may comprise an upper surface disposed on the one surface of the light emitting device, a third side surface extending from the upper surface to the lower surface of the first bonding part along the first side surface of the first bonding part, and a fourth side surface extending from the upper surface to the lower surface of the second bonding part along the second side surface of the second bonding part.
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公开(公告)号：US11329205B2
公开(公告)日：2022-05-10
申请号：US16768304
申请日：2018-11-30
发明人： Chang Man Lim , June O Song , Ki Seok Kim
摘要： A light emitting device package according to an embodiment may include first and second frames, a body, a light emitting device, first and second conductive parts, and first and second conductors. According to the embodiment, first and second frames may be spaced apart from each other and include first and second openings, respectively. The body may be disposed between the first and second frames. The light emitting device may be disposed on the body and include first and second bonding parts. The first and second conductive parts may be disposed under the first and second bonding parts. The first and second conductors may be disposed in the first and second openings, respectively. According to the embodiment, the first and second conductive parts may extend into the first and second openings from the first and second bonding parts, respectively, and the first and second conductors may be disposed between the first and second conductive parts and the first and second frames, respectively.
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10.发明授权公开(公告)号：US12051886B2
公开(公告)日：2024-07-30
申请号：US17256571
申请日：2019-06-28
发明人： Keun Uk Park , Yeo Jae Yoon
CPC分类号： H01S5/18377 , H01S5/3086
摘要： An embodiment relates to a surface-emitting laser element, a light-emitting device comprising same, and a method for manufacturing same. A surface-emitting laser element according to an embodiment may comprise: a substrate; a first reflective layer disposed on the substrate; an active layer disposed on the first reflective layer; an aperture region disposed on the active layer and including an aperture and an insulation region; and a second reflective layer disposed on the aperture region. The doping level of the aperture region may be (X+3)×XE18 (atoms/cm3) A ratio (b/a) of a second minimum diameter (b) to a first maximum diameter (a) of the aperture may be [95.0−(2X/3)]% to [99.9−(X/3)]%, wherein X may be 0 to 3.
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