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公开(公告)号：US12062740B2
公开(公告)日：2024-08-13
申请号：US17260726
申请日：2019-07-17
发明人： Youn Joon Sung
CPC分类号： H01L33/382 , H01L33/14 , H01L33/62
摘要： An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, and a plurality of first recesses and second recesses which extend through the second conductive semiconductor layer and the active layer and are arranged up to one region of the first conductive semiconductor layer, a first electrode disposed inside each of the first recesses and second recesses to be electrically connected to the first conductive semiconductor layer, and a second electrode electrically connected to the second conductive semiconductor layer, wherein the first conductive semiconductor layer, the active layer, the second conductive semiconductor layer include aluminum, and the number of most adjacent recesses in the plurality of second recesses is fewer than that in the plurality of first recesses and the plurality of second recesses include multiple recesses, each having an area larger than that of each of the plurality of first recesses.
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公开(公告)号：US11961943B2
公开(公告)日：2024-04-16
申请号：US17461601
申请日：2021-08-30
发明人： Youn Joon Sung , Min Sung Kim , Eun Dk Lee
CPC分类号： H01L33/38 , H01L33/12 , H01L33/32 , H01L33/382 , H01L2933/0016
摘要： A semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode provided on a first surface of the first semiconductor layer; a second electrode provided on a first surface of the second semiconductor layer, the active layer being provided between the first surface of the first semiconductor layer and a second surface of the second semiconductor layer that is opposite to the first surface of the second semiconductor layer; a first insulation layer provided on the first surface of the first semiconductor layer, the first surface of the second semiconductor layer, and a side surface of the active layer; a first cover electrode provided on the first electrode; a second cover electrode provided on the second electrode, a second insulation layer provided on the first cover electrode, the second cover electrode, and the first insulation layer, wherein: the second insulation layer includes a first opening over the first cover electrode and a second opening over the second cover electrode, and a plan view of the semiconductor includes a light emitting region that includes a surface of the second cover electrode in the second opening of the second insulation layer, and a non-light emitting region that includes a surface of the first cover electrode in the second opening of the first insulation layer, and a first area of the non-light emitting region is smaller than a second area of the light emitting region.
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公开(公告)号：US11569416B2
公开(公告)日：2023-01-31
申请号：US16331015
申请日：2017-09-11
发明人： Youn Joon Sung , Min Sung Kim , Eun Dk Lee
摘要： An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode. The semiconductor structure includes a first surface extending from an upper surface of the first conductive semiconductor layer where the first electrode is disposed to a side surface of the active layer and an upper surface of the second conductive semiconductor where the second electrode is disposed. The first insulation layer is disposed on the first surface to be spaced apart from the first electrode. The first insulation layer is disposed on the first surface to overlap with the first cover electrode in a first direction perpendicular to the upper surface of the first conductive semiconductor layer.
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公开(公告)号：US11990567B2
公开(公告)日：2024-05-21
申请号：US17268106
申请日：2019-08-06
发明人： Youn Joon Sung
CPC分类号： H01L33/382 , H01L33/005 , H01L33/62 , H01L2933/0016 , H01L2933/0066
摘要： Disclosed in an embodiment is a semiconductor device comprising: a substrate; a light emitting structure including a first conductive semiconductor layer and a second conductive semiconductor layer, which are arranged on the substrate, an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, a concave part that is concave on the second conductive semiconductor layer toward the first conductive semiconductor layer, and a recess; a first electrode arranged on the concave part and electrically connected to the first conductive semiconductor layer; a second electrode arranged on the light emitting structure and electrically connected to the second conductive semiconductor layer; a first pad arranged on the first electrode; and a second pad arranged on the second electrode, wherein the recess separates the second conductive semiconductor layer and the active layer into an active region and an inactive region, and the first pad vertically overlaps the concave part, the second conductive semiconductor layer on the inactive region, and the recess.
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公开(公告)号：US11527677B2
公开(公告)日：2022-12-13
申请号：US17045297
申请日：2019-04-05
发明人： Youn Joon Sung , Min Sung Kim
IPC分类号： H01L33/38
摘要： An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses extending through the second conductive semiconductor layer and the active layer and arranged up to a partial region of the first conductive semiconductor layer; a plurality of first electrodes arranged inside the plurality of recesses and electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first conductive layer electrically connected to the plurality of first electrodes; a second conductive layer electrically connected to the second electrode; and an electrode pad electrically connected to the second conductive layer, wherein the electrode pad comprises a first electrode pad and a second electrode pad which are spaced apart from each other, and the area ratio of the electrode pad to the second conductive layer is 1:20 to 1:27.
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公开(公告)号：US11329097B2
公开(公告)日：2022-05-10
申请号：US16497835
申请日：2018-03-27
发明人： Woo Sik Lim , Jae Won Seo , Jin Kyung Choi , Youn Joon Sung , Jong Hyun Kim , Hoe Jun Kim
摘要： An embodiment provides a semiconductor device including a light-emitting structure including a plurality of light-emitting portions disposed at a side and a plurality of second light-emitting portions disposed at another side, a plurality of first connection electrodes configured to electrically connect the plurality of first light-emitting portions, a plurality of second connection electrodes configured to electrically connect the plurality of second light-emitting portions, a first pad disposed on the plurality of first light-emitting portions, and a second pad disposed on the plurality of second light-emitting portions. The first pad includes a plurality of 1-2 pads extending toward the second pad. The second pad includes a plurality of 2-2 pads extending toward the first pad. The first connection electrode includes a region between the plurality of 1-2 pads in a thickness direction of the light-emitting structure. The second connection electrode includes a region between the plurality of 2-2 pads in the thickness direction of the light-emitting structure.
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公开(公告)号：US11641006B2
公开(公告)日：2023-05-02
申请号：US16981762
申请日：2019-03-22
发明人： Youn Joon Sung , Min Sung Kim
摘要： Disclosed in an embodiment is a semiconductor device comprising: a semiconductor structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a second electrode electrically connected to the second conductive type semiconductor layer; and a reflective layer disposed under the second electrode, wherein the second conductive type semiconductor layer comprises a first sub-layer and a second sub-layer disposed between the first sub-layer and the active layer and having an aluminum (Al) composition higher than that of the first sub-layer, the reflective layer comes into contact with the lower surface of the second sub-layer, and the second electrode comes into contact with the first sub-layer.
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公开(公告)号：US11355672B2
公开(公告)日：2022-06-07
申请号：US16068091
申请日：2017-01-04
发明人： Youn Joon Sung
摘要： One embodiment comprises: a semiconductor substrate; a pattern layer disposed on the semiconductor substrate and comprising a plurality of patterns that are spaced apart from each other; a nitride semiconductor layer disposed on the pattern layer; and a semiconductor substrate disposed on the nitride semiconductor layer and comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the thermal conductivity of the pattern layer is higher than the thermal conductivity of the semiconductor substrate and the thermal conductivity of the semiconductor structure.
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公开(公告)号：US11984532B2
公开(公告)日：2024-05-14
申请号：US17256585
申请日：2019-06-28
发明人： Youn Joon Sung
CPC分类号： H01L33/22 , A61L9/20 , H01L33/382 , H01L33/44 , H01L33/486 , C02F1/325 , C02F2201/3222 , C02F2303/04
摘要： A semiconductor device including a conductive substrate; a semiconductor structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and including a plurality of recesses; a first electrode electrically connecting the first conductive type semiconductor layer to the conductive substrate; a second electrode electrically connected to the second conductive type semiconductor layer; and an insulating layer arranged inside the plurality of recesses. The plurality of recesses include a first recess and a plurality of second recesses, the first electrode includes a plurality of protrusion electrodes extending to the inside of the second, the active layer includes an inactive area arranged between the semiconductor structure and the first recess, and an active area arranged on the inner side of the first recess.
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公开(公告)号：US11121284B2
公开(公告)日：2021-09-14
申请号：US16343626
申请日：2017-10-20
发明人： Ki Man Kang , Eun Dk Lee , Hyun Soo Lim , Youn Joon Sung
摘要： Disclosed in an embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a reflective layer disposed on the second electrode and including a first metal; and a nitride of the first metal between the second electrode and the reflective layer.
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