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    Semiconductor laser diode
    1.
    发明授权
    Semiconductor laser diode 有权

    公开(公告)号：US12062887B2

    公开(公告)日：2024-08-13

    申请号：US18322661

    申请日：2023-05-24

    申请人： OSRAM OLED GmbH

    发明人： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

    IPC分类号： H01S5/22 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

    CPC分类号： H01S5/22 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2301/16

    摘要： A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

    SEMICONDUCTOR LASER DIODE
    3.
    发明申请
    SEMICONDUCTOR LASER DIODE 有权

    公开(公告)号：US20220239069A1

    公开(公告)日：2022-07-28

    申请号：US17720794

    申请日：2022-04-14

    申请人： OSRAM OLED GmbH

    发明人： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

    IPC分类号： H01S5/22 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

    摘要： A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

    SEMICONDUCTOR LASER AND PROJECTOR
    4.
    发明申请
    SEMICONDUCTOR LASER AND PROJECTOR 有权

    公开(公告)号：US20210057884A1

    公开(公告)日：2021-02-25

    申请号：US16982425

    申请日：2019-03-13

    申请人： OSRAM OLED GmbH

    发明人： Jan Marfeld ,  André Somers ,  Andreas Löffler ,  Sven Gerhard

    IPC分类号： H01S5/22 ,  H01S5/026 ,  H01S5/042 ,  H01S5/022 ,  H01S5/024 ,  H01S5/323

    摘要： In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 μm. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.

    Semiconductor laser diode
    6.
    发明授权
    Semiconductor laser diode 有权

    公开(公告)号：US11695253B2

    公开(公告)日：2023-07-04

    申请号：US17720794

    申请日：2022-04-14

    申请人： OSRAM OLED GmbH

    发明人： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

    IPC分类号： H01S5/22 ,  H01S5/32 ,  H01S5/042 ,  H01S5/323

    CPC分类号： H01S5/22 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2301/16

    摘要： A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

    OPTOELECTRONIC COMPONENT
    7.
    发明申请
    OPTOELECTRONIC COMPONENT 有权

    公开(公告)号：US20210167581A1

    公开(公告)日：2021-06-03

    申请号：US17172138

    申请日：2021-02-10

    申请人： OSRAM OLED GmbH

    发明人： Sven Gerhard ,  Alfred Lell ,  Clemens Vierheilig ,  Andreas Löffler

    IPC分类号： H01S5/22 ,  H01S5/30

    摘要： An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

    Laser diodes separated from a plurality of laser bars
    8.
    发明授权
    Laser diodes separated from a plurality of laser bars 有权

    公开(公告)号：US10985528B2

    公开(公告)日：2021-04-20

    申请号：US16847730

    申请日：2020-04-14

    申请人： OSRAM OLED GmbH

    发明人： Sven Gerhard

    IPC分类号： H01S5/028 ,  H01S5/02 ,  H01S5/32 ,  H01S5/042 ,  H01S5/22 ,  H01S5/30 ,  H01S5/40 ,  H01S5/10 ,  H01S5/20

    摘要： A laser diode includes a semiconductor body having a substrate and a semiconductor layer sequence arranged on the substrate, which includes an active zone that generates electromagnetic radiation, wherein the semiconductor body has a first main surface and a second main surface opposite the first main surface and at least one first and second laser facet, which are respectively arranged transversely to the first and second main surfaces, and at least one structured facet region located at a transition between the first main surface and at least one of the first and second laser facets, and the structured facet region includes at least a strained compensation layer or a recess.

    Method for manufacturing optoelectric semiconductor component and optoelectric semiconductor component device
    10.
    发明授权
    Method for manufacturing optoelectric semiconductor component and optoelectric semiconductor component device 有权

    公开(公告)号：US11837844B2

    公开(公告)日：2023-12-05

    申请号：US16961901

    申请日：2018-12-27

    申请人： OSRAM OLED GmbH

    发明人： John Brückner ,  Urs Heine ,  Sven Gerhard ,  Lars Nähle ,  Andreas Löffler ,  André Somers

    IPC分类号： H01S5/02 ,  H01L21/304 ,  H01L21/302

    CPC分类号： H01S5/0203 ,  H01S5/0206 ,  H01L21/302 ,  H01L21/304

    摘要： A method for singulating semiconductor components (20) is specified, said method comprising the steps of providing a carrier (21), applying at least two semiconductor chips (22) on the carrier (21), etching at least one break nucleus (23) at a side of the carrier (21) facing the semiconductor chips (22), and singulating at least two semiconductor components (20) by breaking the carrier (21) along the at least one break nucleus (23). The at least one break nucleus (23) extends at least in places in a vertical direction (z), the vertical direction (z) being perpendicular to a main extension plane of the carrier (21), and the at least one break nucleus (23) is arranged between the two semiconductor chips (22) in a lateral direction (x), the lateral direction (x) being parallel to the main extension plane of the carrier (21). Further, each of the semiconductor components (20) comprises at least one of the semiconductor chips (22), and the expansion of the at least one break nucleus (23) in the vertical direction (z) is at least 1% of the expansion of the carrier (21) in the vertical direction (z). Furthermore, a semiconductor component (20) is specified.