-
公开(公告)号：US11923660B2
公开(公告)日：2024-03-05
申请号：US16973452
申请日：2019-06-06
Applicant: OSRAM OLED GmbH
Inventor： Bernhard Stojetz , Christoph Eichler , Alfred Lell , Sven Gerhard
CPC classification number: H01S5/18308 , H01S5/041 , H01S5/18361 , H01S5/4093 , H01S2301/176
Abstract: An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.
-
公开(公告)号：US11411375B2
公开(公告)日：2022-08-09
申请号：US16637698
申请日：2018-08-21
Applicant: OSRAM OLED GmbH
Inventor： Alfred Lell , Muhammad Ali , Bernhard Stojetz , Harald Koenig
Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.
-
公开(公告)号：US10673201B2
公开(公告)日：2020-06-02
申请号：US16311868
申请日：2017-06-07
Applicant: OSRAM OLED GmbH
Inventor： Christoph Eichler , Sven Gerhard , Alfred Lell , Bernhard Stojetz
Abstract: A semiconductor light source includes a laser and at least one phosphor, wherein the laser includes a semiconductor body having at least one active zone that generates laser radiation, at least one resonator having resonator mirrors and having a longitudinal axis is formed in the laser so that the laser radiation is guided and amplified along the longitudinal axis during operation and the active zone is located at least partially in the resonator, and the phosphor is optically coupled to the resonator in a gap-free manner so that in the direction transverse to the longitudinal axis at least part of the laser radiation is introduced into the phosphor and converted into a secondary radiation having a greater wavelength.
-
公开(公告)号：US12062887B2
公开(公告)日：2024-08-13
申请号：US18322661
申请日：2023-05-24
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
CPC classification number: H01S5/22 , H01S5/04253 , H01S5/04254 , H01S5/3211 , H01S5/32341 , H01S2301/16
Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.
-
公开(公告)号：US20220239069A1
公开(公告)日：2022-07-28
申请号：US17720794
申请日：2022-04-14
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.
-
Patent Agency Ranking
公开(公告)号：US20200303898A1
公开(公告)日：2020-09-24
申请号：US16890776
申请日：2020-06-02
Applicant: OSRAM OLED GMBH
Inventor： Bernhard Stojetz , Alfred Lell , Christoph Eichler , Andreas Loeffler
Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.
-
公开(公告)号：US10630057B2
公开(公告)日：2020-04-21
申请号：US16092495
申请日：2017-03-27
Applicant: OSRAM OLED GMBH
Inventor： Bernhard Stojetz , Georg Brüderl
Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.
-
公开(公告)号：US11695253B2
公开(公告)日：2023-07-04
申请号：US17720794
申请日：2022-04-14
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
CPC classification number: H01S5/22 , H01S5/04253 , H01S5/04254 , H01S5/3211 , H01S5/32341 , H01S2301/16
Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.
-
公开(公告)号：US20210367406A1
公开(公告)日：2021-11-25
申请号：US16954961
申请日：2018-12-14
Applicant: OSRAM OLED GmbH
Inventor： Harald König , Bernhard Stojetz , Alfred Lell , Muhammad Ali
IPC: H01S5/323 , H01S5/024 , H01S5/0237 , H01S5/40 , H01S5/22 , B23K26/122
Abstract: In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.
-
公开(公告)号：US11165223B2
公开(公告)日：2021-11-02
申请号：US16890776
申请日：2020-06-02
Applicant: OSRAM OLED GMBH
Inventor： Bernhard Stojetz , Alfred Lell , Christoph Eichler , Andreas Loeffler
IPC: H01S5/06 , H01L33/50 , H01S5/00 , F21K9/64 , H01S5/22 , H01S5/30 , H01S5/34 , H01L33/18 , F21Y115/30
Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.
-
-
-
-
-
-
-
-
-
Search Results
21
records
(took 0.016 seconds)
