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    WAVELENGTH STABILIZATION AND LINEWIDTH NARROWING FOR SINGLE MODE AND MULTIMODE LASER DIODES
    3.
    发明申请
    WAVELENGTH STABILIZATION AND LINEWIDTH NARROWING FOR SINGLE MODE AND MULTIMODE LASER DIODES 审中-公开
    单模和多模激光二极管的波长稳定性和线性度

    公开(公告)号：US20160099545A1

    公开(公告)日：2016-04-07

    申请号：US14708963

    申请日：2015-05-11

    Applicant: V-GEN LTD.

    Inventor： Eran Inbar

    IPC: H01S5/068 ,  G02B6/02 ,  G02B6/293 ,  G02B6/28

    CPC classification number: H01S5/068 ,  G02B6/02076 ,  G02B6/2804 ,  G02B6/29389 ,  H01S5/0064 ,  H01S5/0653 ,  H01S5/0654 ,  H01S5/0656 ,  H01S5/141 ,  H01S5/146 ,  H01S5/4006 ,  H01S5/4012 ,  H01S5/4025 ,  H01S2301/16 ,  H01S2301/163

    Abstract: System for wavelength stabilization in a multimode (MM) laser diode (LD), including at least one MM LD, a respective at least one MM 2×2 beam splitter for each MM LD, an isolator and at least one LD, the LD being respectively coupled with the isolator, the MM LD for generating high power MM laser light, the isolator for enabling laser light to pass through in only one direction and the LD for generating low power laser light, each respective MM 2×2 beam splitter including four ports, each respective MM 2×2 beam splitter having a highly asymmetric splitting ratio and for splitting the generated high power MM laser light and the generated low power laser light, each MM LD being respectively coupled with the fourth port of each respective MM 2×2 beam splitter and a wavelength of the high power laser light locking onto a wavelength of the low power laser light.

    Abstract translation: 用于多模（MM）激光二极管（LD）中的波长稳定的系统，包括至少一个MM LD，用于每个MM LD的相应的至少一个MM 2×2分束器，隔离器和至少一个LD，所述LD为 分别耦合隔离器，用于产生大功率MM激光的MM LD，用于使激光仅在一个方向上通过的隔离器和用于产生低功率激光的LD，每个MM 2×2分束器包括四个 端口，每个相应的MM 2×2分束器具有非常不对称的分裂比，并且用于分离所产生的高功率MM激光和所产生的低功率激光，每个MM LD分别与每个相应MM 2×的第四端口耦合 2分束器和大功率激光的波长锁定在低功率激光的波长上。

    Tunable multi-mode laser
    5.
    发明授权
    Tunable multi-mode laser 有权
    可调谐多模激光

    公开(公告)号：US09013785B2

    公开(公告)日：2015-04-21

    申请号：US14240537

    申请日：2012-08-24

    Applicant: Neil David Whitbread ,  Andrew Cannon Carter

    Inventor： Neil David Whitbread ,  Andrew Cannon Carter

    IPC: H01S5/12 ,  H01S5/125 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/04 ,  H01S3/094 ,  H01S3/30 ,  H01S5/022 ,  H01S5/026

    CPC classification number: H01S5/125 ,  H01S3/094096 ,  H01S3/302 ,  H01S5/02248 ,  H01S5/026 ,  H01S5/041 ,  H01S5/06256 ,  H01S5/1096 ,  H01S5/1212 ,  H01S5/1215 ,  H01S2301/16

    Abstract: A widely tunable multi-mode semiconductor laser containing only two electrically active sections, being an optical gain section and a tunable distributed Bragg reflector section adapted to reflect at a plurality of wavelengths, wherein the gain section is bounded by the tunable distributed Bragg reflector section and a broadband facet reflector, and wherein the tunable distributed Bragg reflector section comprises a plurality of discrete segments capable of being selectively tuned, wherein the reflection spectra of one or more segments of the tunable distributed Bragg reflector section can be tuned lower in wavelength to reflect with the reflection spectrum of a further segment of the tunable distributed Bragg reflector section to provide a wavelength range of enhanced reflectivity. An optical transmitter comprising a light source that is such a widely tunable multi-mode semiconductor laser.

    Abstract translation: 仅包含两个电活性部分的广泛可调谐的多模式半导体激光器，其是适于在多个波长处反射的光学增益部分和可调谐分布布拉格反射器部分，其中增益部分由可调散布布拉格反射器部分限定， 宽带小面反射器，并且其中可调谐分布布拉格反射器部分包括能够被选择性调谐的多个分立段，其中可调谐分布布拉格反射器部分的一个或多个段的反射光谱可以被调谐为较低的波长以与 可调谐分布布拉格反射器部分的另一段的反射光谱，以提供增强的反射率的波长范围。 一种光发射机，包括一个这样一个广泛可调多模半导体激光器的光源。

    Flared Laser Oscillator Waveguide
    7.
    发明申请
    Flared Laser Oscillator Waveguide 有权
    扩张激光振荡器波导

    公开(公告)号：US20140301421A1

    公开(公告)日：2014-10-09

    申请号：US14011661

    申请日：2013-08-27

    Applicant: nLIGHT Photonics Corporation

    Inventor： Manoj Kanskar

    IPC: H01S5/10 ,  H01S5/20

    CPC classification number: H01S5/2036 ,  H01S5/0287 ,  H01S5/0651 ,  H01S5/1003 ,  H01S5/1014 ,  H01S5/1203 ,  H01S5/2018 ,  H01S5/22 ,  H01S2301/16 ,  H01S2301/18

    Abstract: A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations.

    Abstract translation: 广域半导体二极管激光器件包括多模高反射器面，与所述多模高反射面相隔开的局部反射器面，以及在多模高反射面与部分反射面之间延伸和加宽的扩张电流注入区，其中， 部分反射器小面宽度对于高反射器面宽度为n：1，其中n> 1。 广域半导体激光器件是一种扩展的激光振荡器波导，其通过传统的直波导配置提供更好的光束亮度和光束参数乘积。

    SEMICONDUCTOR LASER DEVICE
    8.
    发明申请
    SEMICONDUCTOR LASER DEVICE 有权
    半导体激光器件

    公开(公告)号：US20140204969A1

    公开(公告)日：2014-07-24

    申请号：US13826061

    申请日：2013-03-14

    Applicant: NICHIA CORPORATION

    Inventor： Shingo MASUI ,  Yasuhiro Kawata ,  Tsuyoshi Hirao

    IPC: H01S5/223

    CPC classification number: H01S5/223 ,  H01S5/0021 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/16

    Abstract: The present invention is aimed to prevent occurrence of COD and rapid degradation of light output in semiconductor laser devices. The semiconductor laser device includes a semiconductor laser element 100A and a support member 200. The semiconductor laser element 100a includes a first electrode 13, a substrate 11, and a semiconductor structure 12 having an emitting facet and a reflecting facet, a second electrode 15, and a pad 16, in this order. The semiconductor laser element 100A is connected to a support member 200 at its pad 16 side via a connecting member 300. The emitting-side end portion of the second electrode 15 is spaced apart from the emitting facet of the semiconductor structure 12, and the emitting-side end portion of the pad 16 is located at an outer side than the emitting-side end portion the second electrode 15.

    Abstract translation: 本发明旨在防止半导体激光器件中COD的发生和光输出的快速劣化。 半导体激光器件包括半导体激光元件100A和支撑部件200.半导体激光器元件100a包括第一电极13，基板11和具有发光面和反射面的半导体结构12，第二电极15， 和垫16。 半导体激光元件100A经由连接部件300在其焊盘16侧与支撑部件200连接。第二电极15的发光侧端部与半导体结构体12的发光面间隔开，发光 焊盘16的侧端部位于比第二电极15的发光侧端部的外侧。

    SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME
    9.
    发明申请
    SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME 有权
    半导体光学器件及其制造方法

    公开(公告)号：US20120281274A1

    公开(公告)日：2012-11-08

    申请号：US13307067

    申请日：2011-11-30

    Applicant: Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    Inventor： Dong Churl KIM ,  Kisoo Kim ,  Hyun Soo Kim ,  Byung-seok Choi ,  O-Kyun Kwon ,  Jong Sool Jeong ,  Dae Kon Oh

    IPC: H01S5/20 ,  H01L21/04

    CPC classification number: H01S5/1028 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/1003 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/2222 ,  H01S2301/16

    Abstract: A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.

    Abstract translation: 半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制 区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。 第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。 电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。 第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

    LIGHT GENERATING DEVICE
    10.
    发明申请
    LIGHT GENERATING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20120134014A1

    公开(公告)日：2012-05-31

    申请号：US13281463

    申请日：2011-10-26

    Applicant: Jong Sool Jeong ,  Byung-seok Choi ,  O-Kyun Kwon

    Inventor： Jong Sool Jeong ,  Byung-seok Choi ,  O-Kyun Kwon

    IPC: H01S5/20

    CPC classification number: H01S5/141 ,  H01S3/07 ,  H01S3/08027 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/4062 ,  H01S2301/16

    Abstract: Disclosed is a light generating device which comprises a first reflective semiconductor optical amplifier emitting a first light along a first direction, a second reflective semiconductor optical amplifier emitting the second light in a direction opposite to the first direction, an optical distributer reflecting a part of an incident light and to pass the remaining of the incident light, and an optical comb filter passing a wavelength component of a specific period.

    Abstract translation: 公开了一种发光装置，其包括沿着第一方向发射第一光的第一反射半导体光学放大器，沿与第一方向相反的方向发射第二光的第二反射半导体光学放大器，反射部分的光分配器 入射光并使剩余的入射光通过，并且通过具有特定周期的波长分量的光梳状滤波器。

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