Bypass Diode Interconnect for Thin Film Solar Modules

    公开(公告)号:US20230096010A1

    公开(公告)日:2023-03-30

    申请号:US17658302

    申请日:2022-04-07

    Abstract: Solar cell interconnect with bypass diodes are described. In an embodiment, a semiconductor-based bypass layer is formed over a top electrode layer of a solar cell and spans over a vertical interconnect providing vertical interconnection between the bottom electrode layer and top electrode layer of serial solar cells. A bypass electrode layer is formed over the semiconductor-based bypass layer and in contact with the top electrode layer for one of the solar cells.

    STABLE PEROVSKITE MODULE INTERCONNECTS
    6.
    发明申请

    公开(公告)号:US20200152394A1

    公开(公告)日:2020-05-14

    申请号:US16255396

    申请日:2019-01-23

    Abstract: Thin-film solar cell modules and serial cell-to-cell interconnect structures and methods of fabrication are described. In an embodiment, solar cell module and interconnect includes a conformal transport layer over a subcell layer. The conformal transport layer may also laterally surround an outside perimeter the subcell layer.

    Bypass diode interconnect for thin film solar modules

    公开(公告)号:US12094663B2

    公开(公告)日:2024-09-17

    申请号:US17658302

    申请日:2022-04-07

    CPC classification number: H01G9/2081 H01G9/2009 H01L31/0443

    Abstract: Solar cell interconnect with bypass diodes are described. In an embodiment, a semiconductor-based bypass layer is formed over a top electrode layer of a solar cell and spans over a vertical interconnect providing vertical interconnection between the bottom electrode layer and top electrode layer of serial solar cells. A bypass electrode layer is formed over the semiconductor-based bypass layer and in contact with the top electrode layer for one of the solar cells.

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