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公开(公告)号:US20250037943A1
公开(公告)日:2025-01-30
申请号:US18918588
申请日:2024-10-17
Applicant: Swift Solar Inc.
Inventor: Giles Eperon , Emmanuel Van Kerschaver
Abstract: Hybrid solar cell plates with integrated bypass diodes and modules thereof are described. In an embodiment, a hybrid solar cell plate includes a step surface including a floor and a step edge extending from the floor and across a thickness of a top subcell. A bypass diode is over the floor and laterally adjacent to the step edge.
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公开(公告)号:US12046467B2
公开(公告)日:2024-07-23
申请号:US17150944
申请日:2021-01-15
Applicant: Swift Solar Inc.
Inventor: Kevin Alexander Bush , Maximilian Tobias Hoerantner , Tomas Leijtens
CPC classification number: H01L21/02271 , B65G53/16 , C23C14/0694 , C23C14/228 , C30B23/066
Abstract: Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film.
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公开(公告)号:US20230096010A1
公开(公告)日:2023-03-30
申请号:US17658302
申请日:2022-04-07
Applicant: Swift Solar Inc.
Inventor: Kevin Alexander Bush , Giles Eperon
IPC: H01G9/20
Abstract: Solar cell interconnect with bypass diodes are described. In an embodiment, a semiconductor-based bypass layer is formed over a top electrode layer of a solar cell and spans over a vertical interconnect providing vertical interconnection between the bottom electrode layer and top electrode layer of serial solar cells. A bypass electrode layer is formed over the semiconductor-based bypass layer and in contact with the top electrode layer for one of the solar cells.
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公开(公告)号:US20220238739A1
公开(公告)日:2022-07-28
申请号:US17658725
申请日:2022-04-11
Applicant: Swift Solar Inc.
Inventor: Kevin Alexander Bush
IPC: H01L31/0465 , H01L31/0687 , H01L31/02 , H01G9/20 , H01L51/44
Abstract: Thin-film solar cell modules and serial cell-to-cell interconnect structures and methods of fabrication are described. In an embodiment, solar cell module and interconnect includes a conformal transport layer over a subcell layer. The conformal transport layer may also laterally surround an outside perimeter the subcell layer.
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公开(公告)号:US20200295209A1
公开(公告)日:2020-09-17
申请号:US16298675
申请日:2019-03-11
Applicant: Swift Solar Inc.
Inventor: Kevin Alexander Bush
IPC: H01L31/0443 , H01L31/0463 , H01L31/0224 , H01L31/0725 , H01L31/05 , H01L51/44
Abstract: Thin-film solar cell modules and serial cell-to-cell interconnect structures and methods of fabrication are described. In an embodiment, a solar cell interconnect includes a bypass diode between adjacent solar cells to allow the flow of current around a single solar cell.
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公开(公告)号:US20200152394A1
公开(公告)日:2020-05-14
申请号:US16255396
申请日:2019-01-23
Applicant: Swift Solar Inc.
Inventor: Kevin Alexander Bush
Abstract: Thin-film solar cell modules and serial cell-to-cell interconnect structures and methods of fabrication are described. In an embodiment, solar cell module and interconnect includes a conformal transport layer over a subcell layer. The conformal transport layer may also laterally surround an outside perimeter the subcell layer.
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公开(公告)号:US11864399B1
公开(公告)日:2024-01-02
申请号:US17821246
申请日:2022-08-22
Applicant: Swift Solar Inc.
Inventor: Tomas Leijtens , Giles Eperon , Rohit Prasanna , Annikki Santala
IPC: H10K30/10 , H10K85/20 , H10K102/00
CPC classification number: H10K30/10 , H10K85/211 , H10K2102/00
Abstract: Solar cell stack-ups are described in which fullerene based transport layers are blended with a metal halide such as LiF, CsF or MgF2. In particular, perovskite solar cell stack-ups are described in which an electron transport layer includes a metal halide and fullerene blend.
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公开(公告)号:US20200328077A1
公开(公告)日:2020-10-15
申请号:US16842731
申请日:2020-04-07
Applicant: Swift Solar Inc.
Inventor: Kevin Alexander Bush , Maximilian Tobias Hoerantner , Tomas Leijtens
Abstract: Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film.
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公开(公告)号:US20250029830A1
公开(公告)日:2025-01-23
申请号:US18755143
申请日:2024-06-26
Applicant: Swift Solar Inc.
Inventor: Kevin Alexander Bush , Maximilian Tobias Hoerantner , Tomas Leijtens
Abstract: Vapor phase transport systems and methods of depositing perovskite films are described. In an embodiment, a deposition method includes feeding a perovskite solution or constituent powder to a vaporizer, followed by vaporization and depositing the constituent vapor as a perovskite film. In an embodiment, a deposition system and method includes vaporizing different perovskite precursors in different vaporization zones at different temperatures, followed by mixing the vaporized precursors to form a constituent vapor, and depositing the constituent vapor as a perovskite film.
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公开(公告)号:US12094663B2
公开(公告)日:2024-09-17
申请号:US17658302
申请日:2022-04-07
Applicant: Swift Solar Inc.
Inventor: Kevin Alexander Bush , Giles Eperon
IPC: H01G9/20 , H01L31/0443
CPC classification number: H01G9/2081 , H01G9/2009 , H01L31/0443
Abstract: Solar cell interconnect with bypass diodes are described. In an embodiment, a semiconductor-based bypass layer is formed over a top electrode layer of a solar cell and spans over a vertical interconnect providing vertical interconnection between the bottom electrode layer and top electrode layer of serial solar cells. A bypass electrode layer is formed over the semiconductor-based bypass layer and in contact with the top electrode layer for one of the solar cells.
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