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公开(公告)号：US12054850B2
公开(公告)日：2024-08-06
申请号：US17124810
申请日：2020-12-17
申请人： Wolfspeed, Inc.
发明人： Yuri Khlebnikov , Varad R. Sakhalkar , Caleb A. Kent , Valeri F. Tsvetkov , Michael J. Paisley , Oleksandr Kramarenko , Matthew David Conrad , Eugene Deyneka , Steven Griffiths , Simon Bubel , Adrian R. Powell , Robert Tyler Leonard , Elif Balkas , Jeffrey C. Seaman
CPC分类号： C30B29/36 , C30B23/02 , C30B23/063 , C30B23/066 , C30B31/22 , C30B33/02 , H01L21/0475
摘要： Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.
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公开(公告)号：US20240352622A1
公开(公告)日：2024-10-24
申请号：US18762896
申请日：2024-07-03
申请人： Wolfspeed, Inc.
发明人： Yuri Khlebnikov , Varad R. Sakhalkar , Caleb A. Kent , Valeri F. Tsvetkov , Michael J. Paisley , Oleksandr Kramarenko , Matthew David Conrad , Eugene Deyneka , Steven Griffiths , Simon Bubel , Adrian R. Powell , Robert Tyler Leonard , Elif Balkas , Jeffrey C. Seaman
CPC分类号： C30B29/36 , C30B23/02 , C30B23/063 , C30B23/066 , C30B31/22 , C30B33/02 , H01L21/0475
摘要： Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.
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3.发明授权公开(公告)号：US12125701B2
公开(公告)日：2024-10-22
申请号：US17121863
申请日：2020-12-15
申请人： Wolfspeed, Inc.
发明人： Yuri Khlebnikov , Varad R. Sakhalkar , Caleb A. Kent , Valeri F. Tsvetkov , Michael J. Paisley , Oleksandr Kramarenko , Matthew David Conrad , Eugene Deyneka , Steven Griffiths , Simon Bubel , Adrian R. Powell , Robert Tyler Leonard , Elif Balkas , Curt Progl , Michael Fusco , Alexander Shveyd , Kathy Doverspike , Lukas Nattermann
CPC分类号： H01L21/02378 , C30B23/02 , C30B29/36 , H01L21/0242 , C30B23/005
摘要： Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.
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