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公开(公告)号：US20240093408A1
公开(公告)日：2024-03-21
申请号：US18266268
申请日：2021-12-13
IPC分类号： C30B35/00 , C01B32/956 , C23C16/32 , C23C16/44 , C23C16/46 , C23C16/52 , C30B23/06 , C30B29/36
CPC分类号： C30B35/007 , C01B32/956 , C23C16/325 , C23C16/4411 , C23C16/4412 , C23C16/46 , C23C16/52 , C30B23/066 , C30B29/36
摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.
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公开(公告)号：US20240035201A1
公开(公告)日：2024-02-01
申请号：US18266227
申请日：2021-12-13
IPC分类号： C30B35/00 , C30B29/36 , C30B23/06 , C23C16/32 , C23C16/46 , C23C16/44 , C23C16/52 , C23C16/455 , C23C16/54
CPC分类号： C30B35/007 , C30B29/36 , C30B23/066 , C23C16/325 , C23C16/463 , C23C16/4412 , C23C16/52 , C23C16/45593 , C23C16/545
摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas comprising Si, introducing at least one second source gas into the process chamber, the second source gas comprising C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.
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公开(公告)号：US20240060211A1
公开(公告)日：2024-02-22
申请号：US18266261
申请日：2021-12-13
摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps:
Introducing at least a first source gas into a process chamber, said first source gas including Si,
introducing at least one second source gas into the process chamber, the second source gas including C,
electrically energizing at least one separator element disposed in the process chamber to heat the separator element,
setting a deposition rate of more than 200 μm/h,
where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and
where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.-
公开(公告)号：US20240026566A1
公开(公告)日：2024-01-25
申请号：US18266205
申请日：2021-12-13
摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.
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公开(公告)号：US20240044045A1
公开(公告)日：2024-02-08
申请号：US18266260
申请日：2021-12-13
IPC分类号： C30B35/00 , C23C16/32 , C23C16/46 , C23C16/52 , C23C16/44 , C30B23/06 , C30B23/00 , C30B29/36 , C01B32/977
CPC分类号： C30B35/007 , C23C16/325 , C23C16/46 , C23C16/52 , C23C16/4412 , C30B23/06 , C30B23/005 , C30B29/36 , C01B32/977 , C01P2006/11 , C01P2006/80
摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.
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公开(公告)号：US20240035153A1
公开(公告)日：2024-02-01
申请号：US18266264
申请日：2021-12-13
IPC分类号： C23C16/32 , C23C16/46 , C23C16/455 , C23C16/52 , C30B23/02 , C30B35/00 , C01B32/977
CPC分类号： C23C16/325 , C23C16/46 , C23C16/45512 , C23C16/52 , C30B23/02 , C30B35/007 , C01B32/977 , C01P2006/10 , C01P2006/80
摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1700° C.g. 1)
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公开(公告)号：US20240034635A1
公开(公告)日：2024-02-01
申请号：US18266176
申请日：2021-12-13
IPC分类号： C01B32/956 , C30B25/14 , C23C16/44 , C30B29/36
CPC分类号： C01B32/956 , C30B25/14 , C23C16/4411 , C30B29/36
摘要： The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.
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公开(公告)号：US20230407519A1
公开(公告)日：2023-12-21
申请号：US18037672
申请日：2021-11-19
发明人： Kagan Ceran , Didier Marsan , Alexander Syrkin , Omar Benamara , Moaine Jebara
CPC分类号： C30B23/066 , C30B29/36 , C30B23/005
摘要： The disclosure refers to a furnace apparatus, in particular a furnace apparatus for growing crystals, in particular for growing SiC crystals. The furnace apparatus includes a furnace unit, where the furnace unit includes a furnace housing, at least one crucible unit where the crucible unit is arranged inside the furnace housing, where the crucible unit includes a crucible housing, where the housing has an outer surface and an inner surface, where the inner surface at least partially defines a crucible volume, where a receiving space for receiving a source material is arranged or formed inside the crucible volume, where a seed holder unit for holding a defined seed wafer is arranged inside the crucible volume, and at least one heating unit for heating the source material, where the receiving space for receiving the source material is at least in parts arranged between the heating unit and the seed holder unit.
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