公开(公告)号：US20240172564A1

公开(公告)日：2024-05-23

申请号：US18283607

申请日：2022-03-28

Applicant: NITTO DENKO CORPORATION

Inventor： Gaku TSUBURAOKA ,  Daisuke NAKAMURA ,  Taketo ISHIKAWA ,  Hironobu MACHINAGA

IPC: H10N30/853 ,  C04B35/453 ,  C30B23/08 ,  C30B25/06 ,  C30B29/16 ,  H10N30/076

CPC classification number: H10N30/853 ,  C04B35/453 ,  C30B23/08 ,  C30B25/06 ,  C30B29/16 ,  H10N30/076 ,  C04B2235/3206 ,  C04B2235/3284 ,  C04B2235/46 ,  C04B2235/762 ,  C04B2235/95

Abstract: A piezoelectric film contains a piezoelectric material having a wurtzite-type crystal structure as a main component, and an additive element containing Kr, wherein the piezoelectric material contains a component selected from the group consisting of Zn, Al, Ga, Cd, and Si, as an electropositive element, and wherein a ratio of a content of Kr element to a content of contained elements in the piezoelectric material is in a range from 0.01 atm % to 0.05 atm %.

公开(公告)号：US11572635B2

公开(公告)日：2023-02-07

申请号：US16765641

申请日：2018-11-20

Applicant: The Regents of the University of California

Inventor： Sheng Xu ,  Yimu Chen ,  Yusheng Lei

IPC: C30B25/06 ,  C30B29/32 ,  C30B25/16 ,  C30B25/18 ,  H01M4/36

Abstract: Organic-inorganic hybrid perovskite has demonstrated tremendous potential for the next generation of electronic and optoelectronic devices due to their remarkable carrier dynamics. However, current studies of electronic and optoelectronic devices have been focused on polycrystalline materials, due to the challenges in synthesizing device compatible high quality single crystalline materials. Here, we firstly report the epitaxial growth of single crystal hybrid perovskites with controlled locations, morphologies, and orientations, using combined strategies of lithography, homoepitaxy, and low temperature solution method. The crystals grow following a layer-by-layer model under controlled growth parameters. The process is robust and can be readily scaled up. The as-grown epitaxial single crystals were integrated in an array of light emitting diodes, each crystal as a pixel with enhanced quantum efficiencies. This capability opens up new opportunities for designing and fabricating a diverse range of high performance electronic and optoelectronic devices using crystalline hybrid perovskites.

公开(公告)号：US20230015174A1

公开(公告)日：2023-01-19

申请号：US17891342

申请日：2022-08-19

Applicant: University of Science and Technology Beijing

Inventor： Xiaolu Pang ,  Tao Guo ,  Kewei Gao

IPC: C23C14/34 ,  C23C14/06 ,  C23C14/00 ,  C30B29/38 ,  C30B25/06 ,  C30B25/18 ,  C01B21/06

Abstract: In a general aspect, a ceramic thin film with nanotwinned regions at a tunable volume fraction is manufactured. In some aspects, a method for manufacturing a ceramic thin film on a surface of a substrate in an evacuated chamber is disclosed. The ceramic thin film includes crystalline grains; and each of the crystalline grains includes one or more nanotwinned regions. The one or more nanotwinned regions have a volume fraction in a range of 30-80% of the ceramic thin film. The ceramic thin film comprises titanium, nitrogen, and boron. A plurality of targets including a plurality of sputtering materials is prepared. A gas atmosphere in the evacuated chamber is formed. Electric power is supplied to the plurality of targets to cause co-sputtering of the plurality of sputtering materials to form the ceramic thin film with the one or more nanotwinned regions.

公开(公告)号：US11299820B2

公开(公告)日：2022-04-12

申请号：US15661903

申请日：2017-07-27

Applicant: United States of America as represented by the Administrator of NASA

Inventor： Sang H. Choi ,  Adam J. Duzik

IPC: C30B23/06 ,  H01L21/02 ,  C30B29/52 ,  C30B29/20 ,  C30B23/02 ,  C30B25/06 ,  C30B25/18 ,  C30B29/40 ,  C30B29/48

Abstract: Systems, methods, and devices of the various embodiments may provide a mechanism to enable the growth of a rhombohedral epitaxy at a lower substrate temperature by energizing the atoms in flux, thereby reducing the substrate temperature to a moderate level. In various embodiments, sufficiently energized atoms provide the essential energy needed for the rhombohedral epitaxy process which deforms the original cubic crystalline structure approximately into a rhombohedron by physically aligning the crystal structure of both materials at a lower substrate temperature.

公开(公告)号：US20200232119A1

公开(公告)日：2020-07-23

申请号：US16520544

申请日：2019-07-24

Applicant: CHUNG YUAN CHRISTIAN UNIVERSITY ,  NATIONAL CHIAO TUNG UNIVERSITY

Inventor： Jie-He CHEN ,  Yu-Kai HSU ,  Xiang-Zhu XIE ,  Min-Jie LIOU ,  Hui-Ling KAO ,  Wen-Hao CHANG ,  Jyh-Shin CHEN ,  Po-Chun KUO ,  Li-Syuan LU ,  Han YEH

IPC: C30B29/40 ,  C30B25/06 ,  C30B25/18

Abstract: A method of forming a single-crystal group-III nitride is provided in the present invention. In some embodiments, the method includes the following steps. First, a molybdenum disulfide (MoS2) is formed on a remote substrate. Then, the MoS2 is transferred onto a substrate. Next, a sputtering operation is performed to epitaxially grow a single-crystal group-III nitride layer on the MoS2, so as to form the single-crystal group-III nitride layer on the substrate such as a Si substrate or a flexible substrate.

公开(公告)号：US09905341B2

公开(公告)日：2018-02-27

申请号：US14380997

申请日：2013-02-26

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Toshiaki Fujita ,  Hiroshi Tanaka ,  Hitoshi Inaba ,  Kazutaka Fujiwara ,  Noriaki Nagatomo

IPC: G01K7/00 ,  H01C7/00 ,  H01C7/04 ,  C30B25/06 ,  C30B29/38 ,  G01K7/22 ,  H01C17/12 ,  H01C7/02

CPC classification number: H01C7/008 ,  C30B25/06 ,  C30B29/38 ,  G01K7/22 ,  H01C7/023 ,  H01C7/04 ,  H01C7/043 ,  H01C17/12

Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70≦y/(x+y)≦0.95, 0.4≦z≦0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

公开(公告)号：US09897705B2

公开(公告)日：2018-02-20

申请号：US14989242

申请日：2016-01-06

Applicant: Toshiba Electron Tubes & Devices Co., Ltd.

Inventor： Hiroshi Horiuchi ,  Hiroshi Aida ,  Atsuya Yoshida

IPC: G01T1/202 ,  C09K11/62 ,  C23C14/34 ,  C30B23/02 ,  C30B23/08 ,  C30B25/02 ,  C30B25/06 ,  C30B29/10 ,  G01T1/20 ,  G21K4/00

CPC classification number: G01T1/2023 ,  C09K11/628 ,  C23C14/0694 ,  C23C14/34 ,  C30B23/02 ,  C30B23/08 ,  C30B25/00 ,  C30B25/02 ,  C30B25/06 ,  C30B29/10 ,  C30B29/12 ,  C30B29/605 ,  G01T1/2018 ,  G01T1/202 ,  G21K2004/12

Abstract: According to the embodiment, a radiation detector includes a photoelectric conversion substrate converting light to an electrical signal and a scintillator layer being in contact with the photoelectric conversion substrate and converting externally incident radiation to light. The scintillator layer is made of a phosphor containing Tl as an activator in CsI, which is a halide. A concentration of the activator in the phosphor is 1.6 mass %±0.4 mass %, and a concentration distribution of the activator in an in-plane direction and a film thickness direction is within ±15%.

公开(公告)号：US09890472B2

公开(公告)日：2018-02-13

申请号：US14362130

申请日：2012-04-06

Applicant: Shumin Wang

Inventor： Shumin Wang

IPC: C30B19/12 ,  H01L21/02 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  C30B25/06 ,  C30B29/68

CPC classification number: C30B19/12 ,  C30B23/025 ,  C30B25/06 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02546 ,  H01L21/02667 ,  Y10T428/12681 ,  Y10T428/2495 ,  Y10T428/31678

Abstract: The present invention provides a monolithic integrated lattice mismatched crystal template and a preparation method thereof by using low-viscosity material, the preparation method for the crystal template includes: providing a first crystal layer with a first lattice constant; growing a buffer layer on the first crystal layer; below the melting point of the buffer layer, growing a second crystal layer and a template layer by sequentially performing the growth process of a second crystal layer and the growth process of a first template layer on the buffer layer, or growing a template layer by directly performing a first template layer growth process on the buffer layer; melting and converting the buffer layer to an amorphous state, performing a second template layer growth process on the template layer grown by the first template layer growth process at the growth temperature above the glass transition temperature of the buffer layer, sequentially growing a template layer until the lattice of the template layer is fully relaxed. Compared to the prior art, the invention has advantages of simple preparation, achieving in various lattice constant material combinations on one substrate and low dislocation density, high crystal quality.

公开(公告)号：US20160116607A1

公开(公告)日：2016-04-28

申请号：US14989242

申请日：2016-01-06

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electron Tubes & Devices Co., Ltd.

Inventor： Hiroshi Horiuchi ,  Hiroshi Aida ,  Atsuya Yoshida

IPC: G01T1/202 ,  C30B25/02 ,  C23C14/34 ,  C30B23/02 ,  C30B23/08 ,  C30B29/10 ,  G01T1/20 ,  C30B25/06

CPC classification number: G01T1/2023 ,  C09K11/628 ,  C23C14/0694 ,  C23C14/34 ,  C30B23/02 ,  C30B23/08 ,  C30B25/00 ,  C30B25/02 ,  C30B25/06 ,  C30B29/10 ,  C30B29/12 ,  C30B29/605 ,  G01T1/2018 ,  G01T1/202 ,  G21K2004/12

Abstract: According to the embodiment, a radiation detector includes a photoelectric conversion substrate converting light to an electrical signal and a scintillator layer being in contact with the photoelectric conversion substrate and converting externally incident radiation to light. The scintillator layer is made of a phosphor containing Tl as an activator in CsI, which is a halide. A concentration of the activator in the phosphor is 1.6 mass %±0.4 mass %, and a concentration distribution of the activator in an in-plane direction and a film thickness direction is within ±15%.

Abstract translation: 根据实施例，辐射检测器包括将光转换为电信号的光电转换基板和与光电转换基板接触并将外部入射的辐射转换成光的闪烁体层。 闪烁体层由含有作为卤化物的CsI中的Tl作为活化剂的荧光体制成。 荧光体中的活化剂的浓度为1.6质量％±0.4质量％，活化剂在面内方向和膜厚度方向上的浓度分布为±15％以内。

公开(公告)号：US09217207B2

公开(公告)日：2015-12-22

申请号：US13953315

申请日：2013-07-29

Applicant: National Chiao Tung University

Inventor： Li Chang ,  Yu-Chang Chen ,  Jr-Yu Chen

IPC: C30B29/04 ,  C30B25/18 ,  C30B25/06 ,  C30B25/10

CPC classification number: C30B25/183 ,  C30B25/06 ,  C30B25/10 ,  C30B25/105 ,  C30B25/186 ,  C30B29/04

Abstract: The present invention is directed to a method of growing thin film diamond. Since there are micro-grooves formed between internal grains of the heterogeneous substrate during lateral epitaxy growth, diamond seeds are allowed to be embedded in the micro-grooves; surface damage caused by scratching method or seeding method also can be prevented. As a result, a continuous diamond thin film with uniform thickness and high quality can be obtained.

Abstract translation: 本发明涉及一种生长薄膜金刚石的方法。 由于在横向外延生长期间在异质衬底的内部晶粒之间形成微槽，所以允许将金刚石晶粒嵌入微槽中; 也可以防止由划痕法或播种法造成的表面损伤。 结果，可以获得具有均匀厚度和高质量的连续金刚石薄膜。