公开(公告)号：US20220158071A1

公开(公告)日：2022-05-19

申请号：US17439504

申请日：2020-03-10

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Taketo ISHIKAWA ,  Hironobu MACHINAGA

IPC: H01L41/047 ,  H01L41/08 ,  H01L41/187 ,  H01L41/29

Abstract: A piezo electric device having a configuration that can suppress the formation of a leakage path between electrodes that sandwich a piezoelectric layer and also reduce deterioration in the piezoelectric characteristics, is provided. The piezoelectric device has a first electrode, a piezoelectric layer, and a second electrode stacked in this order on a substrate. The first electrode and the second electrode are arranged so as not to overlap each other in the stacking direction.

公开(公告)号：US20220085274A1

公开(公告)日：2022-03-17

申请号：US17279054

申请日：2019-09-27

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Manami KUROSE ,  Hironobu MACHINAGA ,  Taketo ISHIKAWA ,  Takahiko YANAGITANI ,  Takahiro SHIMIZU

IPC: H01L41/187 ,  H01L41/08 ,  H01L41/316 ,  C04B35/453 ,  C04B35/622

Abstract: A piezoelectric device having a high conversion efficiency between electrical energy and mechanical energy is provided. The piezoelectric device has first electrode, a second electrode, and a piezoelectric layer provided between the first electrode and the second electrode, wherein the piezoelectric layer is formed of a ZnO-based material having a wurtzite crystal structure to which a metal that does not cause the piezoelectric layer to exhibit conductivity is added, and wherein a squared value of a electromechanical coupling coefficient in thickness vibration mode is 6.5% or more.

公开(公告)号：US20220181542A1

公开(公告)日：2022-06-09

申请号：US17439806

申请日：2020-03-10

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Manami KUROSE ,  Taketo ISHIKAWA ,  Hironobu MACHINAGA

IPC: H01L41/08 ,  H01L41/047 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319

Abstract: The occurrence of cracking in a functional layer is suppressed, while maintaining flexibility of a layered structure. The layered structure includes a polymer substrate, and a crystalline functional layer formed on the first surface of the substrate. The surface roughness of the first surface of the substrate is 3 nm or less in terms of arithmetic mean roughness (Ra).

公开(公告)号：US20240172564A1

公开(公告)日：2024-05-23

申请号：US18283607

申请日：2022-03-28

Applicant: NITTO DENKO CORPORATION

Inventor： Gaku TSUBURAOKA ,  Daisuke NAKAMURA ,  Taketo ISHIKAWA ,  Hironobu MACHINAGA

IPC: H10N30/853 ,  C04B35/453 ,  C30B23/08 ,  C30B25/06 ,  C30B29/16 ,  H10N30/076

CPC classification number: H10N30/853 ,  C04B35/453 ,  C30B23/08 ,  C30B25/06 ,  C30B29/16 ,  H10N30/076 ,  C04B2235/3206 ,  C04B2235/3284 ,  C04B2235/46 ,  C04B2235/762 ,  C04B2235/95

Abstract: A piezoelectric film contains a piezoelectric material having a wurtzite-type crystal structure as a main component, and an additive element containing Kr, wherein the piezoelectric material contains a component selected from the group consisting of Zn, Al, Ga, Cd, and Si, as an electropositive element, and wherein a ratio of a content of Kr element to a content of contained elements in the piezoelectric material is in a range from 0.01 atm % to 0.05 atm %.

公开(公告)号：US20220037580A1

公开(公告)日：2022-02-03

申请号：US17279692

申请日：2019-09-20

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Manami KUROSE ,  Hironobu MACHINAGA

IPC: H01L41/083 ,  H01L41/08 ,  H01L41/187 ,  H01L41/277 ,  H01L41/316 ,  H01L41/319

Abstract: For a piezoelectric device, an optical characteristic and/or a piezoelectric characteristic is improved. A piezoelectric device has a first electrode layer, a second electrode layer, and a piezoelectric layer provided between the first electrode layer and the second electrode layer, wherein the piezoelectric layer is formed of a wurtzite crystal material as a main component, to which one or more elements is/are added, said one or more elements being transparent when turned into an oxide, and wherein a haze value is 3% or less, and transmittance with respect to light having a wavelength of 380 nm is 50% or more.

公开(公告)号：US20210399202A1

公开(公告)日：2021-12-23

申请号：US17279538

申请日：2019-09-26

Applicant: Nitto Denko Corporation

Inventor： Naoki NAGAOKA ,  Daisuke NAKAMURA ,  Manami KUROSE

IPC: H01L41/047 ,  H01L41/113 ,  H01L41/187 ,  H01L41/29

Abstract: A piezoelectric device that exhibits good piezoelectric characteristics, while reducing generation of leakage current paths, and a method of manufacturing the same, are provided. The piezoelectric device has a multilayer stack in which a first electrode, a piezoelectric layer, and a second electrode are stacked in this order on a substrate, wherein at least the first electrode is formed of an amorphous oxide conductor.

公开(公告)号：US20210343927A1

公开(公告)日：2021-11-04

申请号：US17279943

申请日：2019-09-20

Applicant: Nitto Denko Corporation

Inventor： Naoki NAGAOKA ,  Daisuke NAKAMURA

IPC: H01L41/083 ,  H01L41/08 ,  H01L41/313 ,  H01L41/27

Abstract: A piezoelectric device has a good piezoelectric characteristic, while suppressing a leakage current between electrodes. The piezoelectric device has a first substrate, a first conductive film provided on the first substrate, a piezoelectric layer formed of an inorganic material and provided on the first conductive film, an adhesive layer provided on the piezoelectric layer, and a second conductive film provided on the adhesive layer.