公开(公告)号：US20220085274A1

公开(公告)日：2022-03-17

申请号：US17279054

申请日：2019-09-27

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Manami KUROSE ,  Hironobu MACHINAGA ,  Taketo ISHIKAWA ,  Takahiko YANAGITANI ,  Takahiro SHIMIZU

IPC: H01L41/187 ,  H01L41/08 ,  H01L41/316 ,  C04B35/453 ,  C04B35/622

Abstract: A piezoelectric device having a high conversion efficiency between electrical energy and mechanical energy is provided. The piezoelectric device has first electrode, a second electrode, and a piezoelectric layer provided between the first electrode and the second electrode, wherein the piezoelectric layer is formed of a ZnO-based material having a wurtzite crystal structure to which a metal that does not cause the piezoelectric layer to exhibit conductivity is added, and wherein a squared value of a electromechanical coupling coefficient in thickness vibration mode is 6.5% or more.

公开(公告)号：US20190263996A1

公开(公告)日：2019-08-29

申请号：US16320366

申请日：2017-04-06

Applicant: NITTO DENKO CORPORATION

Inventor： Masayoshi NAKAMURA ,  Masayuki HODONO ,  Takahiko ITO ,  Naoki NAGAOKA ,  Tomoaki HISHIKI

IPC: C08J9/28 ,  C08G73/10

Abstract: Provided is a low-dielectric porous polymer film having a low dielectric constant at high millimeter-wave frequencies and thereby useful as a sheet for a millimeter-wave antenna. The low-dielectric porous polymer film is made of a polymer material and formed with fine pores dispersed therein, wherein the film has a porosity of 60% or more, and the pores have an average pore diameter of 10 μm or less.

公开(公告)号：US20220158071A1

公开(公告)日：2022-05-19

申请号：US17439504

申请日：2020-03-10

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Taketo ISHIKAWA ,  Hironobu MACHINAGA

IPC: H01L41/047 ,  H01L41/08 ,  H01L41/187 ,  H01L41/29

Abstract: A piezo electric device having a configuration that can suppress the formation of a leakage path between electrodes that sandwich a piezoelectric layer and also reduce deterioration in the piezoelectric characteristics, is provided. The piezoelectric device has a first electrode, a piezoelectric layer, and a second electrode stacked in this order on a substrate. The first electrode and the second electrode are arranged so as not to overlap each other in the stacking direction.

公开(公告)号：US20190263995A1

公开(公告)日：2019-08-29

申请号：US16320056

申请日：2017-04-06

Applicant: NITTO DENKO CORPORATION

Inventor： Masayoshi NAKAMURA ,  Masayuki HODONO ,  Takahiko ITO ,  Naoki NAGAOKA ,  Tomoaki HISHIKI

IPC: C08J9/26 ,  C08G73/10 ,  C08J5/18 ,  B32B7/022 ,  B32B7/025 ,  B32B27/08 ,  B32B27/28

Abstract: Provided is a low-dielectric porous polymer film having a low dielectric constant at high millimeter-wave frequencies and thereby useful as a sheet for a millimeter-wave antenna. The low-dielectric porous polymer film comprises: a base material layer made of a polymer material and formed with fine pores dispersed therein; and a substantially smooth skin layer made of the same polymer material as that of the base material layer and formed on at least one of the surfaces of the base material layer.

公开(公告)号：US20220181542A1

公开(公告)日：2022-06-09

申请号：US17439806

申请日：2020-03-10

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Manami KUROSE ,  Taketo ISHIKAWA ,  Hironobu MACHINAGA

IPC: H01L41/08 ,  H01L41/047 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319

Abstract: The occurrence of cracking in a functional layer is suppressed, while maintaining flexibility of a layered structure. The layered structure includes a polymer substrate, and a crystalline functional layer formed on the first surface of the substrate. The surface roughness of the first surface of the substrate is 3 nm or less in terms of arithmetic mean roughness (Ra).

公开(公告)号：US20200032026A1

公开(公告)日：2020-01-30

申请号：US16500882

申请日：2018-04-06

Applicant: NITTO DENKO CORPORATION

Inventor： Masayoshi NAKAMURA ,  Masayuki HODONO ,  Takahiko ITO ,  Naoki NAGAOKA ,  Tomoaki HISHIKI

IPC: C08J9/28 ,  B32B7/12 ,  B32B15/08 ,  B32B15/20 ,  B32B27/28

Abstract: Provided is a porous low-dielectric polymer film which has a low dielectric constant at high millimeter-wave frequencies to fulfill utility as a sheet for a millimeter-wave antenna, and provides excellent circuit board processability. The porous low-dielectric polymer film is made of a polymer material and formed with fine pores dispersed therein, wherein the film has a porosity of 60% or more, and the pores have an average pore diameter of 50 μm or less, and wherein a porous structure of the film is a closed-cell structure.

公开(公告)号：US20230140996A1

公开(公告)日：2023-05-11

申请号：US17915317

申请日：2021-02-25

Applicant: NITTO DENKO CORPORATION

Inventor： Koji SAKAMOTO ,  Takahiko ITO ,  Naoki NAGAOKA ,  Shu SASAKI ,  Daiki KATO

IPC: B32B5/18 ,  B32B27/08 ,  B32B27/32 ,  B32B25/08 ,  B32B27/34

CPC classification number: B32B5/18 ,  B32B27/08 ,  B32B27/32 ,  B32B25/08 ,  B32B27/34 ,  B32B2266/025 ,  B32B2266/0257 ,  B32B2250/04 ,  B32B2250/24 ,  B32B2250/22 ,  B32B2307/206 ,  B32B2305/026 ,  B32B2266/104 ,  B32B2457/00

Abstract: A resin sheet includes a porous structure. The porous structure is configured to adjust transmission of a millimeter wave. The porous structure has a relative permittivity varying in stages in a thickness direction of the resin sheet from a plane on which the millimeter wave is incident, the relative permittivity varying such that a difference between average relative permittivities in two adjacent layer portions is a predetermined value or less, the layer portions each having a particular thickness smaller than a wavelength of the millimeter wave. The porous structure has, as pores, only pores each having a pore diameter equal to or less than 10% of the wavelength of the millimeter wave.

公开(公告)号：US20210343927A1

公开(公告)日：2021-11-04

申请号：US17279943

申请日：2019-09-20

Applicant: Nitto Denko Corporation

Inventor： Naoki NAGAOKA ,  Daisuke NAKAMURA

IPC: H01L41/083 ,  H01L41/08 ,  H01L41/313 ,  H01L41/27

Abstract: A piezoelectric device has a good piezoelectric characteristic, while suppressing a leakage current between electrodes. The piezoelectric device has a first substrate, a first conductive film provided on the first substrate, a piezoelectric layer formed of an inorganic material and provided on the first conductive film, an adhesive layer provided on the piezoelectric layer, and a second conductive film provided on the adhesive layer.

公开(公告)号：US20220037580A1

公开(公告)日：2022-02-03

申请号：US17279692

申请日：2019-09-20

Applicant: Nitto Denko Corporation

Inventor： Daisuke NAKAMURA ,  Naoki NAGAOKA ,  Manami KUROSE ,  Hironobu MACHINAGA

IPC: H01L41/083 ,  H01L41/08 ,  H01L41/187 ,  H01L41/277 ,  H01L41/316 ,  H01L41/319

Abstract: For a piezoelectric device, an optical characteristic and/or a piezoelectric characteristic is improved. A piezoelectric device has a first electrode layer, a second electrode layer, and a piezoelectric layer provided between the first electrode layer and the second electrode layer, wherein the piezoelectric layer is formed of a wurtzite crystal material as a main component, to which one or more elements is/are added, said one or more elements being transparent when turned into an oxide, and wherein a haze value is 3% or less, and transmittance with respect to light having a wavelength of 380 nm is 50% or more.

公开(公告)号：US20210399202A1

公开(公告)日：2021-12-23

申请号：US17279538

申请日：2019-09-26

Applicant: Nitto Denko Corporation

Inventor： Naoki NAGAOKA ,  Daisuke NAKAMURA ,  Manami KUROSE

IPC: H01L41/047 ,  H01L41/113 ,  H01L41/187 ,  H01L41/29

Abstract: A piezoelectric device that exhibits good piezoelectric characteristics, while reducing generation of leakage current paths, and a method of manufacturing the same, are provided. The piezoelectric device has a multilayer stack in which a first electrode, a piezoelectric layer, and a second electrode are stacked in this order on a substrate, wherein at least the first electrode is formed of an amorphous oxide conductor.