公开(公告)号：US09396936B2

公开(公告)日：2016-07-19

申请号：US14304416

申请日：2014-06-13

Applicant: National Chiao Tung University

Inventor： Li Chang ,  Jr-Yu Chen ,  Wei-Chun Chen ,  Pei-Yin Lin

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/20

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003

Abstract: A method for growing aluminum indium nitride (AlInN) films on silicon substrates comprises several steps: firstly, arranging a silicon substrate in a reaction chamber; secondly, providing multiple reaction gases in the reaction chamber, wherein the reaction gases include aluminum precursors, indium precursors and nitrogen-containing gases; finally, dynamically adjusting flow rates of the reaction gases and directly growing an AlInN layer on the silicon substrate via a crystal growth process. By directly forming an AlInN layer on the silicon substrate, lattice matching is increased, residual thermal stress is reduced and film quality is improved. In addition, fabrication process is simplified and thus cost is reduced.

Abstract translation: 在硅衬底上生长铝铟氮化物（AlInN）膜的方法包括几个步骤：首先将硅衬底布置在反应室中; 其次，在反应室中提供多个反应气体，其中反应气体包括铝前体，铟前体和含氮气体; 最后，动态调整反应气体的流速，并通过晶体生长过程直接生长硅衬底上的AlInN层。 通过在硅衬底上直接形成AlInN层，晶格匹配增加，残余热应力降低，膜质量提高。 此外，制造工艺简化，从而降低成本。

公开(公告)号：US09217207B2

公开(公告)日：2015-12-22

申请号：US13953315

申请日：2013-07-29

Applicant: National Chiao Tung University

Inventor： Li Chang ,  Yu-Chang Chen ,  Jr-Yu Chen

IPC: C30B29/04 ,  C30B25/18 ,  C30B25/06 ,  C30B25/10

CPC classification number: C30B25/183 ,  C30B25/06 ,  C30B25/10 ,  C30B25/105 ,  C30B25/186 ,  C30B29/04

Abstract: The present invention is directed to a method of growing thin film diamond. Since there are micro-grooves formed between internal grains of the heterogeneous substrate during lateral epitaxy growth, diamond seeds are allowed to be embedded in the micro-grooves; surface damage caused by scratching method or seeding method also can be prevented. As a result, a continuous diamond thin film with uniform thickness and high quality can be obtained.

Abstract translation: 本发明涉及一种生长薄膜金刚石的方法。 由于在横向外延生长期间在异质衬底的内部晶粒之间形成微槽，所以允许将金刚石晶粒嵌入微槽中; 也可以防止由划痕法或播种法造成的表面损伤。 结果，可以获得具有均匀厚度和高质量的连续金刚石薄膜。