知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

85 records (took 0.024 seconds)

    Reduced hydrogen deposition processes
    1.
    发明授权
    Reduced hydrogen deposition processes 有权

    公开(公告)号：US12027366B2

    公开(公告)日：2024-07-02

    申请号：US17095037

    申请日：2020-11-11

    Applicant: Applied Materials, Inc.

    Inventor： Xiaoquan Min ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Lee

    IPC: H01L21/02

    CPC classification number: H01L21/02518 ,  H01L21/02642

    Abstract: Exemplary methods of semiconductor processing may include treating a surface of a substrate with a hydrogen-containing precursor. The substrate may be disposed within a processing region of a semiconductor processing chamber. The methods may include contacting the substrate with a tungsten-containing precursor. The methods may include forming an initiation layer comprising tungsten on the substrate. The methods may include treating the initiation layer with a hydrogen-containing precursor. The methods may include forming a plasma of the tungsten-containing precursor and a carbon-containing precursor. Hydrogen in the plasma may be limited to hydrogen included in the carbon-containing precursor. The methods may include forming a tungsten-containing hardmask layer on the initiation layer.

    Patterning a Target Layer
    3.
    发明申请
    Patterning a Target Layer 审中-公开

    公开(公告)号：US20180374837A1

    公开(公告)日：2018-12-27

    申请号：US16014888

    申请日：2018-06-21

    Applicant: IMEC VZW

    Inventor： Frederic Lazzarino

    IPC: H01L27/02 ,  H01L21/768 ,  H01L21/02 ,  H01L21/033 ,  H01L23/528

    CPC classification number: H01L27/0207 ,  H01L21/02518 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/76816 ,  H01L21/76877 ,  H01L23/528

    Abstract: A method is provided for patterning a target layer, the method comprising: (i) forming above the target layer a line mask and a mandrel mask, wherein forming the line mask comprises forming parallel material lines extending in a longitudinal direction, wherein forming the mandrel mask comprises forming a mandrel mask having sidewalls including at least a first sidewall extending transverse to a plurality of the material lines; (ii) forming on the sidewalls of the mandrel mask a sidewall spacer including a first sidewall spacer portion extending along the first sidewall; (iii) partially removing the sidewall spacer such that a remainder of the sidewall spacer comprises at least a part of the first sidewall spacer portion; and (iv) subsequent to removing the mandrel mask, transferring into the target layer a pattern defined by the line mask and the remainder of the sidewall spacer.

    Semiconductor nanocrystals and methods
    6.
    发明授权
    Semiconductor nanocrystals and methods 有权
    半导体纳米晶体和方法

    公开(公告)号：US09543142B2

    公开(公告)日：2017-01-10

    申请号：US14182076

    申请日：2014-02-17

    Applicant: QD VISION, INC.

    Inventor： Inja Song ,  Craig Breen

    IPC: H01L21/02 ,  B82Y30/00 ,  B01J13/22

    CPC classification number: H01L21/02601 ,  B01J13/22 ,  B82Y30/00 ,  H01L21/02518 ,  H01L21/02628

    Abstract: In one embodiment, a method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and an aromatic solvent, introducing one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, reacting the precursors in the reaction mixture, without the addition of an acid compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals, and wherein an amide compound is formed in situ in the reaction mixture prior to isolating the coated semiconductor nanocrystals. In another embodiment, method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and a solvent, introducing an amide compound, one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, and reacting the precursors in the reaction mixture in the presence of the amide compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals. Semiconductor nanocrystals including coatings grown in accordance with the above methods are also disclosed.

    Abstract translation: 在一个实施方案中，在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和芳族溶剂的第一混合物，引入一种或多种阳离子前体和一种或多种阴离子前体 进入第一混合物以形成用于形成半导体材料的反应混合物，使反应混合物中的前体在不加入酸化合物的条件下，在足以在至少一部分外部生长包含半导体材料的涂层的条件下反应 半导体纳米晶体的至少一部分的表面，并且其中在分离涂覆的半导体纳米晶体之前在反应混合物中原位形成酰胺化合物。 在另一个实施方案中，在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和溶剂的第一混合物，引入酰胺化合物，一种或多种阳离子前体和一种或多种 阴离子前体进入第一混合物以形成用于形成半导体材料的反应混合物，并且在酰胺化合物存在下使反应混合物中的前体在足以在至少一部分 半导体纳米晶体的至少一部分的外表面。 还公开了包括根据上述方法生长的涂层的半导体纳米晶体。

    BULK FIN-FIELD EFFECT TRANSISTORS WITH WELL DEFINED ISOLATION
    9.
    发明申请
    BULK FIN-FIELD EFFECT TRANSISTORS WITH WELL DEFINED ISOLATION 有权
    具有良好定义分离的大块晶体效应晶体管

    公开(公告)号：US20140295647A1

    公开(公告)日：2014-10-02

    申请号：US14054152

    申请日：2013-10-15

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Kangguo CHENG ,  Balasubramanian S. HARAN ,  Shom PONOTH ,  Theodorus E. STANDAERT ,  Tenko YAMASHITA

    IPC: H01L29/66

    CPC classification number: H01L29/66795 ,  H01L21/02518 ,  H01L21/02636 ,  H01L21/265 ,  H01L29/66477 ,  H01L29/6681 ,  H01L29/785

    Abstract: A computer program storage product includes instructions for forming a fin field-effect-transistor. The instructions are configured to perform a method. The method includes implanting a dopant into an exposed portion of a semiconductor substrate within a cavity. The cavity is formed in a dielectric layer on the semiconductor substrate. The cavity exposes the portion of the semiconductor substrate within the cavity. A semiconductor layer is epitaxially grown within the cavity atop the dopant implanted exposed portion of the semiconductor substrate. A height of the cavity defines a height of the epitaxially grown semiconductor.

    Abstract translation: 计算机程序存储产品包括用于形成鳍状场效应晶体管的指令。 指令被配置为执行一种方法。 该方法包括将掺杂剂注入腔内的半导体衬底的暴露部分。 空腔形成在半导体衬底上的电介质层中。 空腔将半导体衬底的部分暴露在空腔内。 在半导体衬底的掺杂剂注入的暴露部分的顶部的腔内外延生长半导体层。 空腔的高度限定外延生长的半导体的高度。

Patent Agency Ranking