公开(公告)号：US20240295026A1

公开(公告)日：2024-09-05

申请号：US18025197

申请日：2021-09-09

申请人： LAM RESEARCH CORPORATION

发明人： Lipyeow YAP ,  Panya WONGSENAKHUM ,  Nivin VIKRAMAN ,  Gary B. LIND

IPC分类号： C23C16/455 ,  C23C16/44

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/4557

摘要： A showerhead for a processing chamber comprises a metal plate attached to the processing chamber. a ceramic faceplate attached to the metal plate and including a plurality of gas outlets on a substrate-facing surface. and a metal ring surrounding the ceramic faceplate and attached to the processing chamber.

公开(公告)号：US20230383404A1

公开(公告)日：2023-11-30

申请号：US18446984

申请日：2023-08-09

申请人： Picosun Oy

发明人： Marko PUDAS

IPC分类号： C23C16/455 ,  C23C16/44 ,  F16K1/44

CPC分类号： C23C16/45544 ,  C23C16/4408 ,  C23C16/4405 ,  C23C16/45557 ,  C23C16/4557 ,  C23C16/45589 ,  C23C16/45561 ,  C23C16/4402 ,  C23C16/45519 ,  F16K1/446

摘要： An apparatus, a method and a valve with a reactive chemical inlet, a reaction chamber outlet, and a closure having an open and closed configuration to open and close, respectively, a route from the reactive chemical inlet to the reaction chamber outlet, the valve further including an additional cleaning chemical inlet at a downstream side of the closure to purge the closure.

公开(公告)号：US20230193466A1

公开(公告)日：2023-06-22

申请号：US18108989

申请日：2023-02-13

申请人： Applied Materials, Inc.

发明人： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward W. BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC分类号： C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

CPC分类号： C23C16/52 ,  G01B11/0683 ,  H01L21/687 ,  H01L21/67248 ,  H01L21/67253 ,  C23C16/5096 ,  G01N21/55 ,  G01N21/658 ,  G01B11/0625 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/509 ,  G01N2201/1222

摘要： A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US11655542B2

公开(公告)日：2023-05-23

申请号：US17105261

申请日：2020-11-25

申请人： Carpe Diem Technologies, Inc.

发明人： Daniel Beane ,  John S. Berg ,  Dimitur Benchev

IPC分类号： C23C16/54 ,  C23C16/455 ,  C23C16/458

CPC分类号： C23C16/545 ,  C23C16/458 ,  C23C16/4557 ,  C23C16/45544 ,  C23C16/45578

摘要： An atomic layer deposition system for depositing thin layers of material onto a common substrate includes a deposition head shaped to define a conical interior cavity into which a conical deposition drum is disposed. Together, the deposition head and the deposition drum define a narrow gap adapted to receive the common substrate, the spacing of the narrow gap being adjustable through acute axial displacement of the deposition head relative to the deposition drum. A pair of rollers advances the substrate through the gap in a first direction, as the deposition head rotates in the opposite direction at a precise rate. Each of the deposition head and deposition drum includes a plurality of separate fluid channels which enable gasses utilized in the deposition process to be delivered into and exhausted from the narrow gap, with the delivery of inert gas on both sides of the substrate effectively creating an air bearing.

公开(公告)号：US20190048462A1

公开(公告)日：2019-02-14

申请号：US16164315

申请日：2018-10-18

申请人： Goodrich Corporation

发明人： Ying She ,  Brian St. Rock

IPC分类号： C23C16/04 ,  F16D65/12 ,  C23C16/52 ,  C23C16/458 ,  C23C16/455 ,  C23C16/26 ,  C04B35/83

CPC分类号： C23C16/045 ,  C04B35/83 ,  C04B2235/614 ,  C23C16/26 ,  C23C16/45502 ,  C23C16/45523 ,  C23C16/4557 ,  C23C16/4581 ,  C23C16/4583 ,  C23C16/52 ,  F16D65/126

摘要： A system and method for enhancing a diffusion limited CVI/CVD process is provided. The system may densify a porous structure by flowing a reactant gas around the porous structure. A mass flow controller may be configured to pulse the flow rate of the reactant gas around the porous structure. The mass flow controller may pulse the flow rate from a nominal flow rate to a first flow rate. The mass flow controller may pulse the first flow rate back to the nominal flow rate or to a second flow rate. The mass flow controller may pulse the flow rate between the nominal flow rate, the first flow rate, and the second flow rate, as desired.

公开(公告)号：US20180187305A1

公开(公告)日：2018-07-05

申请号：US15859035

申请日：2017-12-29

申请人： Applied Materials, Inc.

发明人： Lara HAWRYLCHAK ,  Agus Sofian TJANDRA ,  Emre CUVALCI

IPC分类号： C23C16/455

CPC分类号： C23C16/4557 ,  C23C16/45587 ,  C23C16/4584

摘要： A gas injection apparatus for a thermal processing chamber includes a gas injector having an inlet at a first end and a port at a second end; and a plate having a first opening matching the port, one or more second openings, and at least one circuitous flow path defined by the plate and fluidly connecting the first opening to the one or more second openings.

公开(公告)号：US09982364B2

公开(公告)日：2018-05-29

申请号：US15092875

申请日：2016-04-07

申请人： APPLIED MATERIALS, INC.

发明人： David Masayuki Ishikawa ,  Paul J. Steffas ,  Sumedh Acharya ,  Brian H. Burrows

IPC分类号： C30B25/10 ,  C30B25/22 ,  H01L31/18 ,  H01L21/67 ,  H01L21/687 ,  C30B25/12 ,  C30B25/14 ,  C30B29/06 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02

CPC分类号： C30B25/22 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/4557 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/68771 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In some embodiments, an substrate processing system may include a chamber body, a heater assembly disposed within the chamber body, wherein the heater assembly includes a plurality of resistive heater elements coupled together to form an isothermal heated enclosure, and a process kit disposed within the isothermal heated enclosure and having an inner processing volume that includes a plurality of substrate supports to support substrates when disposed thereon, wherein the process kit includes a first processing gas inlet to provide processing gases to the inner processing volume, a first carrier gas inlet to provide a carrier gas to the inner processing volume, and a first exhaust outlet, and a first gas heater coupled via a first conduit to the first carrier gas inlet to heat the carrier gas prior to flowing into the inner processing volume.

公开(公告)号：US20180144932A1

公开(公告)日：2018-05-24

申请号：US15876829

申请日：2018-01-22

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Ren-Hua GUO ,  Ju-Ru HSIEH ,  Jen-Hao YANG

IPC分类号： H01L21/02 ,  C23C16/509 ,  C23C16/455 ,  H01L29/66 ,  H01L21/8238 ,  C23C16/52 ,  C23C16/44 ,  C23C16/50 ,  C23C16/46 ,  C23C16/458

CPC分类号： H01L21/02271 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01L21/02315 ,  H01L21/8238 ,  H01L21/823871 ,  H01L29/165 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833

摘要： A method for manufacturing a semiconductor device includes introducing a gas into a chamber from a showerhead. The chamber has a sidewall surrounding a pedestal. The temperature of the showerhead is increased. The showerhead is thermally connected to the sidewall of the chamber, and a temperature of the sidewall of the chamber is increased by increasing the temperature of the showerhead.

公开(公告)号：US20170327938A1

公开(公告)日：2017-11-16

申请号：US15531328

申请日：2015-11-19

申请人： AIXTRON SE

发明人： Michael LONG

IPC分类号： C23C14/24 ,  C23C16/455

CPC分类号： C23C14/24 ,  C23C14/12 ,  C23C14/562 ,  C23C16/45519 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578

摘要： A device for depositing a layer on a substrate includes a process chamber and a gas inlet element. The substrate is moved in a movement direction in the process chamber during a coating process. The gas inlet element has a first, second and third gas distribution chamber with a first, second and third gas outlet zone, respectively. The second gas outlet zone is arranged immediately before the first gas outlet zone in the movement direction of the substrate and the third gas outlet zone is arranged immediately after the first gas outlet zone in the movement direction of the substrate. The first, second and the third gas distribution chambers each have a gas-heating apparatus. The first gas distribution chamber has an evaporating apparatus for a solid or liquid starting material, which can be fed into the first gas distribution chamber through an feed-in opening.

公开(公告)号：US09816187B2

公开(公告)日：2017-11-14

申请号：US15278455

申请日：2016-09-28

申请人： Applied Materials, Inc.

发明人： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC分类号： G01N21/00 ,  C23C16/52 ,  G01B11/06 ,  H01L21/00 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  G01N21/55 ,  G01N21/65 ,  C23C16/455

CPC分类号： C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

摘要： A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.