公开(公告)号：US20140117982A1

公开(公告)日：2014-05-01

申请号：US13662330

申请日：2012-10-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Edward W. BUDIARTO ,  Todd J. EGAN ,  Dmitry A. DZILNO

IPC: G01B7/06

CPC classification number: G01B7/105

Abstract: In one embodiment, a sample is tested by an eddy current sensor at two distances separated by a known incremental distance. In one aspect, at least one of an unknown distance of the sensor from the test sample and the film thickness of the test sample may be determined as a function of a comparison of sensor output levels of a single parameter and the known incremental distance to calibration data. In yet another aspect, the distance between the sensor and the test sample may oscillated to produce an oscillating sensor output signal having an amplitude and mean which may be measured and compared to calibration data to identify at least one of the unknown film thickness of a conductive film on a test sample, and the unknown distance of the test sample from the sensor. Other aspects and features are also described.

Abstract translation: 在一个实施例中，样品由涡流传感器以已知增量距离隔开的两个距离进行测试。 在一个方面，传感器与测试样品的未知距离和测试样品的膜厚度中的至少一个可以被确定为单个参数的传感器输出水平与已校准的增量距离与校准的比较的函数 数据。 在另一方面，传感器和测试样品之间的距离可以振荡以产生具有振幅和平均值的振荡传感器输出信号，该振幅和平均值可以被测量并与校准数据进行比较以识别导电的未知膜厚度中的至少一个 测试样品上的胶片，以及测试样品与传感器的未知距离。 还描述了其他方面和特征。

公开(公告)号：US20230193466A1

公开(公告)日：2023-06-22

申请号：US18108989

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward W. BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

CPC classification number: C23C16/52 ,  G01B11/0683 ,  H01L21/687 ,  H01L21/67248 ,  H01L21/67253 ,  C23C16/5096 ,  G01N21/55 ,  G01N21/658 ,  G01B11/0625 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/509 ,  G01N2201/1222

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20240142223A1

公开(公告)日：2024-05-02

申请号：US18308844

申请日：2023-04-28

Applicant: Applied Materials, Inc.

Inventor： Khokan C. PAUL ,  Zhepeng CONG ,  Tao SHENG ,  Edward W. BUDIARTO ,  Todd EGAN

IPC: G01B11/06

CPC classification number: G01B11/0625

Abstract: In one implementation, a method of monitoring film thickness on a substrate, comprises: generating light from a light source; collimating the light from the light source to form a collimated beam; reflecting the collimated beam off of a surface to be measured to produce a reflected beam; splitting the reflected beam with a dichroic mirror, wherein the reflected beam splits into a first beam and a second beam; receiving, by a pyrometer, the first beam from the dichroic mirror; receiving, by a spectrometer, the second beam from the dichroic mirror; and analyzing data derived from the pyrometer and the spectrometer to determine one or more characteristics of the surface to be measured.