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    ULTRA-HIGH MODULUS AND ETCH SELECTIVITY BORON-CARBON HARDMASK FILMS
    2.
    发明申请
    ULTRA-HIGH MODULUS AND ETCH SELECTIVITY BORON-CARBON HARDMASK FILMS 审中-公开

    公开(公告)号：US20190122889A1

    公开(公告)日：2019-04-25

    申请号：US16219557

    申请日：2018-12-13

    申请人： Applied Materials, Inc.

    发明人： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Karthik Thimmavajjula NARASIMHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM

    IPC分类号： H01L21/033 ,  C23C16/32 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/505

    摘要： Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

    INTEGRATED PRE-CLEAN AND DEPOSITION OF LOW-DAMAGE LAYERS
    4.
    发明申请
    INTEGRATED PRE-CLEAN AND DEPOSITION OF LOW-DAMAGE LAYERS 审中-公开
    一体化预清洗和低损耗层的沉积

    公开(公告)号：US20160017487A1

    公开(公告)日：2016-01-21

    申请号：US14472311

    申请日：2014-08-28

    申请人： Applied Materials, Inc.

    发明人： Yihong CHEN ,  Shaunak MUKHERJEE ,  Martin Jay SEAMONS ,  Kelvin CHAN ,  Abhijit Basu MALLICK ,  Bok Hoen KIM ,  Jianhua ZHOU

    IPC分类号： C23C16/34 ,  C23C16/50 ,  C23C16/40 ,  C23C16/44

    CPC分类号： C23C16/34 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/403

    摘要： A method of processing a substrate includes positioning the substrate within a processing zone of a processing chamber and removing an oxide layer from a surface of the substrate by introducing first radicals into the processing zone. The method further includes, after removing the oxide layer, introducing at least one first precursor gas into the processing zone and depositing at least one dielectric layer onto the surface by exposing the at least one first precursor gas to second radicals. After positioning the substrate within the processing zone, the substrate is not removed from the processing chamber until each of removing the oxide layer and depositing the at least one dielectric layer is performed.

    摘要翻译： 一种处理衬底的方法包括将衬底定位在处理室的处理区内，并通过将第一自由基引入处理区从衬底的表面去除氧化物层。 该方法还包括在除去氧化物层之后，通过将至少一种第一前体气体暴露于第二自由基将至少一种第一前体气体引入到处理区域中并将至少一个电介质层沉积到表面上。 在将衬底定位在处理区域内之前，基板不会从处理室中移除，直到执行去除氧化物层和沉积至少一个电介质层。

    ULTRA-CONFORMAL CARBON FILM DEPOSITION LAYER-BY-LAYER DEPOSITION OF CARBON-DOPED OXIDE FILMS
    5.
    发明申请
    ULTRA-CONFORMAL CARBON FILM DEPOSITION LAYER-BY-LAYER DEPOSITION OF CARBON-DOPED OXIDE FILMS 有权
    碳化硅薄膜超级一致性碳膜沉积层逐层沉积

    公开(公告)号：US20160005596A1

    公开(公告)日：2016-01-07

    申请号：US14770412

    申请日：2014-02-14

    申请人： APPLIED MATERIALS, INC.

    发明人： Swayambhu P. BEHERA ,  Shahid SHAIKH ,  Pramit MANNA ,  Mandar B. PANDIT ,  Tersem SUMMAN ,  Patrick REILLY ,  Deenesh PADHI ,  Bok Hoen KIM ,  Heung Lak PARK ,  Derek R. WITTY

    IPC分类号： H01L21/02 ,  H01L21/033 ,  H01L21/311

    CPC分类号： H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116

    摘要： Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source: plasma-initiating gas: dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features.

    摘要翻译： 本发明的实施方案涉及保形碳基材料的沉积。 在一个实施例中，该方法包括在衬底上沉积具有预定厚度的牺牲电介质层，通过去除牺牲电介质层的部分以暴露衬底的上表面，引入烃源，等离子体 - 引发气体和稀释气体进入处理室，其中烃源的体积流量：等离子体起始气体：稀释气体的比例为1:0.5:20，在约300℃的沉积温度下产生等离子体 C至约500℃以在图案化特征和暴露的基底的上表面上沉积共形无定形碳层，从图案化特征的上表面和基底的上表面选择性地除去无定形碳层， 图案特征。

    ULTRA-HIGH MODULUS AND ETCH SELECTIVITY BORON-CARBON HARDMASK FILMS
    6.
    发明申请
    ULTRA-HIGH MODULUS AND ETCH SELECTIVITY BORON-CARBON HARDMASK FILMS 有权

    公开(公告)号：US20210225650A1

    公开(公告)日：2021-07-22

    申请号：US17220441

    申请日：2021-04-01

    申请人： Applied Materials, Inc.

    发明人： Prashant Kumar KULSHRESHTHA ,  Ziqing DUAN ,  Karthik Thimmavajjula NARASIMHA ,  Kwangduk Douglas LEE ,  Bok Hoen KIM

    IPC分类号： H01L21/033 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/02 ,  C23C16/32

    摘要： Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.

    METHODS TO IMPROVE IN-FILM PARTICLE PERFORMANCE OF AMORPHOUS BORON-CARBON HARDMASK PROCESS IN PECVD SYSTEM
    9.
    发明申请
    METHODS TO IMPROVE IN-FILM PARTICLE PERFORMANCE OF AMORPHOUS BORON-CARBON HARDMASK PROCESS IN PECVD SYSTEM 有权
    改进PECVD系统中非晶态碳纳米管工艺的膜内粒子性能的方法

    公开(公告)号：US20170062218A1

    公开(公告)日：2017-03-02

    申请号：US15203032

    申请日：2016-07-06

    申请人： Applied Materials, Inc.

    发明人： Ziqing DUAN ,  Kwangduk Douglas LEE ,  Abdul Aziz KHAJA ,  Amit Kumar BANSAL ,  Bok Hoen KIM ,  Prashant Kumar KULSHRESHTHA

    IPC分类号： H01L21/033 ,  C23C16/455 ,  C23C16/505

    CPC分类号： H01L21/0338 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/455 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/5096 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31122

    摘要： Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.

    摘要翻译： 本公开的实施方式一般涉及集成电路的制造。 更具体地，本文所述的实施方案提供了用于在具有减少的颗粒污染的基底上沉积含硼无定形碳膜的技术。 在一个实施方案中，该方法包括使含烃气体混合物流入具有位于其中的基底的处理体积，使含硼气体混合物流入处理体积中，将处理体积中的压力稳定在预定义的射频开启延迟 时间段，在预定义的射频导通延迟时间段到期之后在处理容积中产生RF等离子体以在基底上沉积含硼非晶膜，将处理室的处理体积暴露于干法清洗过程中并沉积非晶态 硼化季节层在处理室的处理体积中的至少一个表面上。