公开(公告)号：US20230193466A1

公开(公告)日：2023-06-22

申请号：US18108989

申请日：2023-02-13

申请人： Applied Materials, Inc.

发明人： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward W. BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC分类号： C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

CPC分类号： C23C16/52 ,  G01B11/0683 ,  H01L21/687 ,  H01L21/67248 ,  H01L21/67253 ,  C23C16/5096 ,  G01N21/55 ,  G01N21/658 ,  G01B11/0625 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/509 ,  G01N2201/1222

摘要： A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20170157651A1

公开(公告)日：2017-06-08

申请号：US15349443

申请日：2016-11-11

申请人： Applied Materials, Inc.

发明人： Thomas NOWAK

IPC分类号： B08B5/02 ,  G01N15/06 ,  B08B15/04

摘要： Embodiments described herein generally relate to a particle collection apparatus and probe head for the collection of particles on process tool components. In one embodiment, a particle collection apparatus for counting particles present on a processing tool component is disclosed herein. The particle collection apparatus includes a particle collector. The particle collector is configured to scan a processing tool component and collect particles collected from the processing tool component. The particle collector includes a body and a probe head coupled to the body. The probe head has a probe body and a controlled spacing element. The controlled spacing element is coupled to the probe body and is configured to form a uniform manifold between the probe body and the processing tool component.

公开(公告)号：US20170016118A1

公开(公告)日：2017-01-19

申请号：US15278455

申请日：2016-09-28

申请人： Applied Materials, Inc.

发明人： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC分类号： C23C16/52 ,  C23C16/46 ,  H01L21/687 ,  C23C16/458 ,  G01B11/06 ,  H01L21/67 ,  C23C16/455 ,  C23C16/509

CPC分类号： C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

摘要： A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

摘要翻译： 描述了根据PECVD工艺处理衬底的方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。

公开(公告)号：US20190304825A1

公开(公告)日：2019-10-03

申请号：US16443185

申请日：2019-06-17

申请人： Applied Materials, Inc.

发明人： Dale R. Du BOIS ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Ganesh BALASUBRAMANIAN ,  Lipyeow YAP ,  Jianhua ZHOU ,  Thomas NOWAK

IPC分类号： H01L21/68 ,  H01L21/687 ,  H01L21/67 ,  H01L21/324 ,  B05C13/00 ,  H01J37/32 ,  C23C16/458

摘要： A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering fingers for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering fingers are movably disposed along a periphery of the support surface, and each of the plurality of centering fingers comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

公开(公告)号：US20180258535A1

公开(公告)日：2018-09-13

申请号：US15976468

申请日：2018-05-10

申请人： Applied Materials, Inc.

发明人： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC分类号： C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  C23C16/509 ,  C23C16/455 ,  C23C16/505 ,  C23C16/50 ,  C23C16/46 ,  C23C16/458 ,  G01N21/65 ,  G01N21/55 ,  H01L21/67 ,  H01L21/00

摘要： A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20140053866A1

公开(公告)日：2014-02-27

申请号：US13970176

申请日：2013-08-19

申请人： APPLIED MATERIALS, INC.

发明人： Sanjeev BALUJA ,  Alexandros T. DEMOS ,  Kelvin CHAN ,  Juan Carlos ROCHA-ALVAREZ ,  Scott A. HENDRICKSON ,  Abhijit KANGUDE ,  Inna TUREVSKY ,  Mahendra CHHABRA ,  Thomas NOWAK ,  Daping YAO ,  Bo XIE ,  Daemian RAJ

IPC分类号： B08B7/00

CPC分类号： C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

摘要： A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

摘要翻译： 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

公开(公告)号：US20160289838A1

公开(公告)日：2016-10-06

申请号：US15184675

申请日：2016-06-16

申请人： Applied Materials, Inc.

发明人： Amit BANSAL ,  Dale R. DU BOIS ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Scott A. HENDRICKSON ,  Thomas NOWAK

IPC分类号： C23C16/56

摘要： Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.

摘要翻译： 本发明的实施例提供了用于在相同的室中进行UV处理和化学处理和/或沉积的装置和方法。 本发明的一个实施例提供了一种处理室，其包括设置在位于处理室的内部体积中的基板支撑件上方的UV透明气体分配喷头，设置在UV透明气体分配喷头上方的UV透明窗口，以及设置在UV透明气体分配喷头 在内容之外。 UV单元被配置为通过UV透明窗口和UV透明气体分配喷头将UV光引向基板支撑。

公开(公告)号：US20160084400A1

公开(公告)日：2016-03-24

申请号：US14932384

申请日：2015-11-04

申请人： Applied Materials, Inc.

发明人： Ramprakash SANKARAKRISHNAN ,  Dale R. DU BOIS ,  Ganesh BALASUBRAMANIAN ,  Karthik JANAKIRAMAN ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Visweswaren SIVARAMAKRISHNAN ,  Hichem M'SAAD

IPC分类号： F16K31/06 ,  F16K1/22

CPC分类号： F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

公开(公告)号：US20160296981A1

公开(公告)日：2016-10-13

申请号：US15180514

申请日：2016-06-13

申请人： Applied Materials, Inc.

发明人： Sanjeev BALUJA ,  Alexandros T. DEMOS ,  Kelvin CHAN ,  Juan Carlos ROCHA-ALVAREZ ,  Scott A. HENDRICKSON ,  Abhijit KANGUDE ,  Inna TUREVSKY ,  Mahendra CHHABRA ,  Thomas NOWAK ,  Daping YAO ,  Bo XIE ,  Daemian RAJ

IPC分类号： B08B7/00 ,  B08B5/00 ,  C23C16/48 ,  C23C16/44 ,  C23C16/455 ,  B08B9/08 ,  B08B17/02

CPC分类号： C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

摘要： A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

摘要翻译： 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

公开(公告)号：US20160093521A1

公开(公告)日：2016-03-31

申请号：US14875392

申请日：2015-10-05

申请人： Applied Materials, Inc.

发明人： Dale R. DU BOIS ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Ganesh BALASUBRAMANIAN ,  Lipyeow YAP ,  Jianhua ZHOU ,  Thomas NOWAK

IPC分类号： H01L21/68 ,  H01L21/67 ,  H01L21/324 ,  H01L21/687

CPC分类号： H01L21/68 ,  C23C16/4585 ,  H01J37/32091 ,  H01L21/324 ,  H01L21/67103 ,  H01L21/68728 ,  H01L21/6875

摘要： A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

摘要翻译： 提供了一种用于加热室中的衬底的方法和装置。 用于将基板定位在处理室中的装置。 在一个实施例中，该装置包括基板支撑组件，该基板支撑组件具有适于接收基板的支撑表面和用于在平行于支撑表面的距离处支撑基板的多个定心构件，并且用于使基板相对于参考轴线基本垂直 到支撑面。 多个定心构件沿着支撑表面的周边可移动地设置，并且多个定心构件中的每一个包括用于接触或支撑衬底的周缘的第一端部。