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    METHOD AND HARDWARE FOR CLEANING UV CHAMBERS
    2.
    发明申请
    METHOD AND HARDWARE FOR CLEANING UV CHAMBERS 有权
    清洁紫外线灯的方法和硬件

    公开(公告)号：US20140053866A1

    公开(公告)日：2014-02-27

    申请号：US13970176

    申请日：2013-08-19

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Sanjeev BALUJA ,  Alexandros T. DEMOS ,  Kelvin CHAN ,  Juan Carlos ROCHA-ALVAREZ ,  Scott A. HENDRICKSON ,  Abhijit KANGUDE ,  Inna TUREVSKY ,  Mahendra CHHABRA ,  Thomas NOWAK ,  Daping YAO ,  Bo XIE ,  Daemian RAJ

    IPC: B08B7/00

    CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

    Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

    Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

    METHOD TO DETECT VALVE DEVIATION
    4.
    发明申请
    METHOD TO DETECT VALVE DEVIATION 审中-公开
    检测阀偏差的方法

    公开(公告)号：US20140261703A1

    公开(公告)日：2014-09-18

    申请号：US14188629

    申请日：2014-02-24

    Applicant: Applied Materials, Inc.

    Inventor： Daemian RAJ ,  Juan Carlos ROCHA-ALVAREZ ,  Jason K. FOSTER ,  Bo XIE ,  Alexandros T. DEMOS

    IPC: F16K37/00

    CPC classification number: F16K37/0091 ,  Y10T137/0318 ,  Y10T137/8326

    Abstract: Methods for detecting valve leakage and apparatus for the same are provided. In one embodiment, a method for detecting a valve leakage includes flowing a gas through a diverter valve, determining a pressure in a gas source provided to the diverter valve, comparing the determined pressure value with an expected pressure value, and generating a signal in response to the comparison.

    Abstract translation: 提供了检测阀门泄漏的方法及其设备。 在一个实施例中，一种用于检测阀泄漏的方法包括使气体流过分流阀，确定提供给转向阀的气源中的压力，将所确定的压力值与预期压力值进行比较，并产生响应的信号 比较。

    DIFFUSER DESIGN FOR FLOWABLE CVD
    5.
    发明申请
    DIFFUSER DESIGN FOR FLOWABLE CVD 审中-公开

    公开(公告)号：US20180258531A1

    公开(公告)日：2018-09-13

    申请号：US15893184

    申请日：2018-02-09

    Applicant: Applied Materials, Inc.

    Inventor： Ying MA ,  Daemian RAJ ,  Greg CHICHKANOFF

    IPC: C23C16/455 ,  H01J37/32 ,  C23C16/513

    Abstract: Implementations described herein generally relate to an apparatus for forming flowable films. In one implementation, the apparatus is a diffuser including a body having a first surface and a second surface opposing the first surface, a plurality of dome structures formed in the first surface, a central manifold formed in the second surface, and a plurality of tubular conduits coupled between the central manifold and a respective one of the plurality of dome structures, at least a portion of the plurality of tubular conduits being positioned diagonally relative to a plane of the first surface.

    WET CLEANING OF A CHAMBER COMPONENT
    6.
    发明申请
    WET CLEANING OF A CHAMBER COMPONENT 审中-公开
    室内组件的湿度清洁

    公开(公告)号：US20160017263A1

    公开(公告)日：2016-01-21

    申请号：US14650565

    申请日：2014-01-21

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Ren-Guan DUAN ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Daemian RAJ ,  Inna TUREVSKY

    IPC: C11D11/00 ,  C11D7/10 ,  B08B3/10 ,  C11D7/08 ,  B08B3/08 ,  B08B3/12

    CPC classification number: C11D11/007 ,  B08B3/08 ,  B08B3/10 ,  B08B3/12 ,  C11D7/08 ,  C11D7/10 ,  C11D11/0041 ,  H01L21/67028

    Abstract: Embodiments of the invention generally provide methods for cleaning a UV processing chamber component. In one embodiment, a method for cleaning a UV processing chamber component includes soaking the chamber component having a SiCO residue formed thereon in a cleaning solution for about 1 to 10 minutes. The cleaning solution comprises about 5% by weight to about 60% weight of NH4F and about 0.5% by weight to about 10% by weight of HF. The method also includes polishing the chamber component. In another embodiment, a method of cleaning a processing chamber component fabricated from quartz includes soaking the chamber component having a SiCO residue formed thereon in a cleaning solution comprising about 36% by weight of NH4F and about by weight of HF for about 3 minutes. The method also includes applying an ultrasonic power to the cleaning solution, and mechanically polishing the chamber component.

    Abstract translation: 本发明的实施方案通常提供用于清洁UV处理室部件的方法。 在一个实施例中，用于清洁UV处理室部件的方法包括将其上形成有SiCO残留物的室部件浸泡在清洁溶液中约1至10分钟。 清洁溶液包含约5重量％至约60重量％的NH 4 F和约0.5重量％至约10重量％的HF。 该方法还包括抛光室部件。 在另一个实施例中，清洁由石英制成的处理室部件的方法包括将其中形成有SiCO残余物的室组件浸泡在包含约36重量％NH 4 F和约HF重量约3分钟的清洁溶液中。 该方法还包括向清洗溶液施加超声波功率，并机械抛光室部件。

    BOTTOM PUMP AND PURGE AND BOTTOM OZONE CLEAN HARDWARE TO REDUCE FALL-ON PARTICLE DEFECTS
    9.
    发明申请
    BOTTOM PUMP AND PURGE AND BOTTOM OZONE CLEAN HARDWARE TO REDUCE FALL-ON PARTICLE DEFECTS 审中-公开
    底部泵和冲洗和底部臭氧清洁硬件，以减少落下的颗粒缺陷

    公开(公告)号：US20150211114A1

    公开(公告)日：2015-07-30

    申请号：US14593068

    申请日：2015-01-09

    Applicant: Applied Materials, Inc.

    Inventor： Abhijit KANGUDE ,  Sanjeev BALUJA ,  Juan Carlos ROCHA-ALVAREZ ,  Daemian RAJ

    IPC: C23C16/44 ,  C23C16/455 ,  C23C16/48

    CPC classification number: C23C16/4412 ,  C23C16/4405 ,  C23C16/4408

    Abstract: Embodiments described herein generally relate to preventing contaminant deposition within a semiconductor processing chamber and removing contaminants from a semiconductor processing chamber. Bottom purging and pumping prevents contaminant deposition below a pedestal heater or exhausts contaminants from below the pedestal, respectively. Bottom purging prevents contaminants from depositing below the pedestal and provides for an exhaust from the processing chamber to be located substantially coplanar with a substrate being processed. Bottom pumping removes contaminants present below the pedestal from the processing chamber. Specifically, embodiments described herein relate to purging and pumping via a pedestal bellows and/or equalization port.

    Abstract translation: 本文描述的实施例通常涉及防止在半导体处理室内的污染物沉积并从半导体处理室去除污染物。 底部清洗和抽吸可以防止底座加热器下方的污染物沉积或分别从基座下方排出污染物。 底部清洗防止污染物沉积在基座下方，并且提供来自处理室的排气物，以与被处理的基底基本上共面定位。 底部泵送从处理室移除底座下面的污染物。 具体地，本文所述的实施例涉及通过基座波纹管和/或均衡端口的清洗和泵送。

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