公开(公告)号：US20240136160A1

公开(公告)日：2024-04-25

申请号：US17971205

申请日：2022-10-20

申请人： Applied Materials, Inc.

发明人： Zheng John YE ,  Andrew C. LAM ,  Zeqiong ZHAO ,  Jianhua ZHOU ,  Hshiang AN ,  Suhail ANWAR ,  Yoshitake NAKAJIMA ,  Fu-ting CHANG

IPC分类号： H01J37/32 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

CPC分类号： H01J37/32715 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32183 ,  H01J2237/0262 ,  H01J2237/20235 ,  H01J2237/24564 ,  H01J2237/3321 ,  H01J2237/3323

摘要： Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedances at a substrate support in a plasma processing chamber during processing of a substrate. A substrate support includes a plurality of substrate support pins wherein the radio frequency voltage, current and phase of each of the plurality of substrate support pins are measured and impedances of the support pins are adjusted in real time. Each of the substrate support pins is coupled to an associated adjustable impedance circuit that may be remotely controlled. In one embodiment a variable capacitor is used to adjust the impedance of the impedance circuit coupled to the associated substrate support pin and may be remotely adjusted with a stepper motor. In another embodiment a microcontroller may control the impedance adjustments for all of the plurality of substrate support pins and may be used to track these impedances with each other and with a bulk impedance of the plasma processing chamber.

公开(公告)号：US20210296144A1

公开(公告)日：2021-09-23

申请号：US17332458

申请日：2021-05-27

申请人： Applied Materials, Inc.

发明人： Xing LIN ,  Vijay D. PARKHE ,  Jianhua ZHOU ,  Edward P. HAMMOND, IV ,  Jaeyong CHO ,  Zheng John YE ,  Zonghui SU ,  Juan Carlos ROCHA-ALVAREZ

IPC分类号： H01L21/67 ,  C23C16/46 ,  C23C14/50 ,  H01J37/32 ,  H01L21/687 ,  C23C16/509 ,  C23C16/458

摘要： A method and apparatus for a heated substrate support pedestal is provided. In one embodiment, a substrate support pedestal includes a ceramic body having a top surface and a bottom surface. The substrate support pedestal has a stem coupled to the bottom surface of the ceramic body. A top electrode is disposed within the ceramic body. A conductive rod is disposed through the stem and coupled to the top electrode. A plurality of heater elements is disposed within the ceramic body below the top electrode. A ground mesh is disposed within the ceramic body, below the plurality of heater elements, and above the bottom surface of the ceramic body.

公开(公告)号：US20200051848A1

公开(公告)日：2020-02-13

申请号：US16660385

申请日：2019-10-22

申请人： Applied Materials, Inc.

发明人： Xing LIN ,  Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Ramprakash SANKARAKRISHNAN

IPC分类号： H01L21/687 ,  H01J37/32 ,  C23C16/458 ,  H01L21/67

摘要： A method and apparatus for a pedestal is provided. In one embodiment, the pedestal includes a body comprising a ceramic material having a flange, one or more heating elements embedded in the body, a first shaft coupled to the flange, and a second shaft coupled to the first shaft; wherein the second shaft includes a plurality of fluid channels formed therein that terminate in the second shaft.

公开(公告)号：US20170352569A1

公开(公告)日：2017-12-07

申请号：US15612054

申请日：2017-06-02

申请人： Applied Materials, Inc.

发明人： Abdul Aziz KHAJA ,  Xing LIN ,  Edward P. HAMMOND, IV ,  Juan Carlos ROCHA-ALVAREZ ,  Chidambara A. RAMALINGAM ,  Ganesh BALASUBRAMANIAN ,  Ren-Guan DUAN ,  Jianhua ZHOU ,  Jonathan J. STRAHLE

IPC分类号： H01L21/683 ,  H01L21/67

CPC分类号： H01L21/6833 ,  H01L21/67103 ,  H01L21/6831

摘要： A heated support assembly is disclosed which includes a body comprising aluminum nitride doped with magnesium oxide having a volume resistivity of about 1×1010 Ω-cm at about 600 degrees Celsius, an electrode embedded in the body, and a heater mesh embedded in the body.

公开(公告)号：US20170278682A1

公开(公告)日：2017-09-28

申请号：US15463020

申请日：2017-03-20

申请人： Applied Materials, Inc.

发明人： Xing LIN ,  Jianhua ZHOU ,  Ningli LIU ,  Juan Carlos ROCHA-ALVAREZ

IPC分类号： H01J37/32 ,  C23C16/46 ,  C30B23/06 ,  C30B25/12 ,  C30B25/10 ,  C23C14/50 ,  C23C16/458

摘要： Embodiments of the present disclosure generally relate to a substrate support assembly in a semiconductor processing chamber. The semiconductor processing chamber may be a PECVD chamber including a substrate support assembly having a substrate support and a stem coupled to the substrate support. An RF electrode is embedded in the substrate support and a rod is coupled to the RF electrode. The rod is made of titanium (Ti) or of nickel (Ni) coated with gold (Au), silver (Ag), aluminum (Al), or copper (Cu). The rod made of Ti or of Ni coated with Au, Ag, Al or Cu has a reduced electrical resistivity and increased skin depth, which minimizes heat generation as RF current travels through the rod.

公开(公告)号：US20170092511A1

公开(公告)日：2017-03-30

申请号：US15013547

申请日：2016-02-02

申请人： Applied Materials, Inc.

发明人： Saptarshi BASU ,  Jeongmin LEE ,  Paul CONNORS ,  Dale R. DU BOIS ,  Prashant Kumar KULSHRESHTHA ,  Karthik Thimmavajjula NARASIMHA ,  Brett BERENS ,  Kalyanjit GHOSH ,  Jianhua ZHOU ,  Ganesh BALASUBRAMANIAN ,  Kwangduk Douglas LEE ,  Juan Carlos ROCHA-ALVAREZ ,  Hiroyuki OGISO ,  Liliya KRIVULINA ,  Rick GILBERT ,  Mohsin WAQAR ,  Venkatanarayana SHANKARAMURTHY ,  Hari K. PONNEKANTI

IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC分类号： H01L21/67069 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/6708 ,  H01L21/67201 ,  H01L21/68785

摘要： Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US20170040198A1

公开(公告)日：2017-02-09

申请号：US15212695

申请日：2016-07-18

申请人： Applied Materials, Inc.

发明人： Xing LIN ,  Jianhua ZHOU ,  Zheng John YE ,  Jian CHEN ,  Juan Carlos ROCHA-ALVAREZ

IPC分类号： H01L21/683 ,  H01L21/67

CPC分类号： H01L21/6833 ,  H01J37/32715 ,  H01L21/67103 ,  H01L21/68735

摘要： Embodiments of the present disclosure provide an improved electrostatic chuck for supporting a substrate. The electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, a plurality of tabs projecting from the substrate supporting surface of the chuck body, wherein the tabs are disposed around the circumference of the chuck body, an electrode embedded within the chuck body, the electrode extending radially from a center of the chuck body to a region beyond the plurality of tabs, and an RF power source coupled to the electrode through a first electrical connection.

摘要翻译： 本公开的实施例提供了用于支撑衬底的改进的静电吸盘。 静电卡盘包括联接到支撑杆的卡盘主体，卡盘主体具有基板支撑表面，从卡盘主体的基板支撑表面突出的多个突片，其中突片围绕卡盘主体的圆周设置， 嵌入在所述卡盘主体内的电极，所述电极从所述卡盘主体的中心径向延伸到超过所述多个突片的区域，以及通过第一电连接与所述电极连接的RF电源。

公开(公告)号：US20160093521A1

公开(公告)日：2016-03-31

申请号：US14875392

申请日：2015-10-05

申请人： Applied Materials, Inc.

发明人： Dale R. DU BOIS ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Ganesh BALASUBRAMANIAN ,  Lipyeow YAP ,  Jianhua ZHOU ,  Thomas NOWAK

IPC分类号： H01L21/68 ,  H01L21/67 ,  H01L21/324 ,  H01L21/687

CPC分类号： H01L21/68 ,  C23C16/4585 ,  H01J37/32091 ,  H01L21/324 ,  H01L21/67103 ,  H01L21/68728 ,  H01L21/6875

摘要： A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

摘要翻译： 提供了一种用于加热室中的衬底的方法和装置。 用于将基板定位在处理室中的装置。 在一个实施例中，该装置包括基板支撑组件，该基板支撑组件具有适于接收基板的支撑表面和用于在平行于支撑表面的距离处支撑基板的多个定心构件，并且用于使基板相对于参考轴线基本垂直 到支撑面。 多个定心构件沿着支撑表面的周边可移动地设置，并且多个定心构件中的每一个包括用于接触或支撑衬底的周缘的第一端部。

公开(公告)号：US20160049323A1

公开(公告)日：2016-02-18

申请号：US14824229

申请日：2015-08-12

申请人： Applied Materials, Inc.

发明人： Zheng John YE ,  Jay D. PINSON, II ,  Hiroji HANAWA ,  Jianhua ZHOU ,  Xing LIN ,  Ren-Guan DUAN ,  Kwangduk Douglas LEE ,  Bok Hoen KIM ,  Swayambhu P. BEHERA ,  Sungwon HA ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA- ALVAREZ ,  Prashant Kumar KULSHRESHTHA ,  Jason K. FOSTER ,  Mukund SRINIVASAN ,  Uwe P. HALLER ,  Hari K. PONNEKANTI

IPC分类号： H01L21/683 ,  H02N13/00

CPC分类号： H01L21/6833 ,  H01L21/68757 ,  H02N13/00

摘要： Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

摘要翻译： 本公开的实施例提供了一种静电卡盘，用于在高温下维持在等离子体反应器中正在加工的基板的平坦度。 在一个实施例中，静电卡盘包括联接到支撑杆的卡盘体，卡盘主体具有基底支撑表面，卡盘体的体积电阻率值约为1×107ohm-cm至约1×1015ohm- 在约250℃至约700℃的温度下，以及嵌入在本体中的电极，电极耦合到电源。 在一个实例中，卡盘主体由氮化铝材料组成，已经被观察到能够在沉积或蚀刻过程期间优化约600℃或更高的夹持性能，或任何其他使用高工作温度和 基板夹紧功能。

公开(公告)号：US20150194326A1

公开(公告)日：2015-07-09

申请号：US14149070

申请日：2014-01-07

申请人： Applied Materials, Inc.

发明人： Jianhua ZHOU ,  Juan Carlos Rocha-Alvarez

IPC分类号： H01L21/67 ,  H01L21/687

CPC分类号： H01L21/68792 ,  H01L21/67109

摘要： Embodiments of the present invention generally relate to semiconductor processing chamber, and more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, the pedestal comprises a substrate support including a support surface for receiving a substrate, a heating element encapsulated within the substrate support, and a first hollow shaft having a first end and a second end, where the first end is fixed to the substrate support. The substrate support and the first hollow shaft are made of a ceramic material and the first hollow shaft has a length between about 50 mm to 100 mm. The pedestal further comprises a second hollow shaft coupled to the second end of the first hollow shaft. The second hollow shaft has a length that is greater than the length of the first hollow shaft.

摘要翻译： 本发明的实施例一般涉及半导体处理室，更具体地说，涉及半导体处理室的加热支撑基座。 在一个实施例中，基座包括衬底支撑件，其包括用于接收衬底的支撑表面，封装在衬底支撑件内的加热元件以及具有第一端和第二端的第一空心轴，其中第一端固定到 底物支撑。 基板支撑件和第一空心轴由陶瓷材料制成，第一空心轴的长度在约50mm至100mm之间。 基座还包括联接到第一空心轴的第二端的第二空心轴。 第二空心轴的长度大于第一中空轴的长度。