公开(公告)号：US20230193466A1

公开(公告)日：2023-06-22

申请号：US18108989

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward W. BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

CPC classification number: C23C16/52 ,  G01B11/0683 ,  H01L21/687 ,  H01L21/67248 ,  H01L21/67253 ,  C23C16/5096 ,  G01N21/55 ,  G01N21/658 ,  G01B11/0625 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/509 ,  G01N2201/1222

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20170016118A1

公开(公告)日：2017-01-19

申请号：US15278455

申请日：2016-09-28

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  C23C16/46 ,  H01L21/687 ,  C23C16/458 ,  G01B11/06 ,  H01L21/67 ,  C23C16/455 ,  C23C16/509

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract translation: 描述了根据PECVD工艺处理衬底的方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。

公开(公告)号：US20160095196A1

公开(公告)日：2016-03-31

申请号：US14496093

申请日：2014-09-25

Applicant: Applied Materials, Inc.

Inventor： Jian J. CHEN ,  Shilpa SUDHAKARAN ,  Mohamad A. AYOUB

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32082 ,  H01J37/32944 ,  H05H2001/4652

Abstract: Embodiments of the present disclosure generally relate to methods for detecting unstable plasma in a substrate processing chamber. In one embodiment, the method includes providing a forward power from a power source to the substrate processing chamber through a detection device, splitting the forward power passing through the detection device at a predetermined ratio to obtain a first value of the power to the substrate processing chamber, measuring a reflected power from the substrate processing chamber to obtain a second value of the power from the substrate processing chamber, and directing the power source to turn off the forward power if the second value of the power is different than the first value of the power.

Abstract translation: 本公开的实施例一般涉及用于检测衬底处理室中的不稳定等离子体的方法。 在一个实施例中，该方法包括通过检测装置从电源向基板处理室提供正向功率，以预定比率分离通过检测装置的正向功率，以获得基板处理功率的第一值 测量来自基板处理室的反射功率，以获得来自基板处理室的功率的第二值，并且如果功率的第二值不同于第一值，则引导电源关闭正向功率 动力。

公开(公告)号：US20190153592A1

公开(公告)日：2019-05-23

申请号：US16259011

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Dale Du BOIS ,  Mohamad A. AYOUB ,  Robert KIM ,  Amit Kumar BANSAL ,  Mark FODOR ,  Binh NGUYEN ,  Siu F. CHENG ,  Hang YU ,  Chiu CHAN ,  Ganesh BALASUBRAMANIAN ,  Deenesh PADHI ,  Juan Carlos ROCHA

IPC: C23C16/04 ,  C23C16/458 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  C23C14/04 ,  H01L21/687 ,  C30B25/12 ,  H01J37/34

Abstract: Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.

公开(公告)号：US20190080916A1

公开(公告)日：2019-03-14

申请号：US16189104

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Juan Carlos ROCHA-ALVAREZ ,  Amit Kumar BANSAL ,  Ganesh BALASUBRAMANIAN ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Mohamad A. AYOUB ,  Jian J. CHEN

IPC: H01L21/30 ,  H01J37/32

Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.

公开(公告)号：US20140087489A1

公开(公告)日：2014-03-27

申请号：US14033947

申请日：2013-09-23

Applicant: Applied Materials, Inc.

Inventor： Juan Carlos ROCHA-ALVAREZ ,  Amit Kumar BANSAL ,  Ganesh BALASUBRAMANIAN ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Mohamad A. AYOUB ,  Jian J. CHEN

IPC: H01L21/30

CPC classification number: H01L21/30 ,  H01J37/32091 ,  H01J37/32532

Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.

Abstract translation: 提供了一种用于等离子体处理衬底的装置。 该装置包括处理室，设置在处理室中的基板支撑件和联接到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器。 调谐电极可以设置在导电气体分配器和腔体之间，用于调节等离子体的接地路径。 第二调谐电极可以耦合到衬底支撑件，并且偏置电极也可以耦合到衬底支撑件。

公开(公告)号：US20180130637A1

公开(公告)日：2018-05-10

申请号：US15862851

申请日：2018-01-05

Applicant: Applied Materials, Inc.

Inventor： Mohamad A. AYOUB ,  Jian J. CHEN ,  Amit K. BANSAL

IPC: H01J37/32 ,  C23C16/505

CPC classification number: H01J37/32174 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/3321

Abstract: Embodiments of the present invention relate to apparatus for enhancing deposition rate and improving a plasma profile during plasma processing of a substrate. According to embodiments, the apparatus includes a tuning electrode disposed in a substrate support pedestal and electrically coupled to a variable capacitor. The capacitance is controlled to control the RF and resulting plasma coupling to the tuning electrode. The plasma profile and the resulting deposition rate and deposited film thickness across the substrate are correspondingly controlled by adjusting the capacitance and impedance at the tuning electrode.

公开(公告)号：US20180066364A1

公开(公告)日：2018-03-08

申请号：US15802496

申请日：2017-11-03

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  H01L21/687 ,  G01B11/06 ,  H01L21/67 ,  G01N21/55 ,  G01N21/65 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455 ,  C23C16/509 ,  H01L21/00

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20160268103A1

公开(公告)日：2016-09-15

申请号：US15068690

申请日：2016-03-14

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz KHAJA ,  Mohamad A. AYOUB ,  Ramesh BOKKA ,  Jay D. PINSON, II ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01J37/32

CPC classification number: H01J37/32458 ,  H01J37/3211 ,  H01J37/32357

Abstract: A plasma source is provided including a core element extending from a first end to a second end along a first axis. The plasma source further includes one or more coils disposed around respective one or more first portions of the core element. The plasma source further includes a plasma block having one or more interior walls at least partially enclosing an annular plasma-generating volume that is disposed around a second portion of the core element. The annular plasma-generating volume includes a first region that is symmetrical about a plurality of perpendicular axes that are perpendicular to a first point positioned on the first axis, the first region having a width in a direction parallel to the first axis and a depth in a direction perpendicular from the first axis. The first region has a width that is at least three times greater than the depth of the first region.

Abstract translation: 提供了等离子体源，其包括沿着第一轴线从第一端延伸到第二端的芯元件。 等离子体源还包括设置在核心元件的相应的一个或多个第一部分周围的一个或多个线圈。 等离子体源还包括具有一个或多个内壁的等离子体块，其至少部分地包围围绕核心元件的第二部分设置的环形等离子体产生容积。 环形等离子体产生体积包括关于垂直于位于第一轴线上的第一点的多个垂直轴对称的第一区域，第一区域具有在平行于第一轴线的方向上的宽度， 与第一轴垂直的方向。 第一区域具有比第一区域的深度至少三倍的宽度。

公开(公告)号：US20160017497A1

公开(公告)日：2016-01-21

申请号：US14869371

申请日：2015-09-29

Applicant: Applied Materials, Inc.

Inventor： NAGARAJAN RAJAGOPALAN ,  Xinhai HAN ,  Michael TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  C23C16/46 ,  C23C16/509 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract translation: 描述了根据PECVD工艺处理衬底的方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。