Patent search ap:("Applied Materials Page Inc.") AND inv:"Prashant KULSHRESHTHA"

1.

发明申请
HIGH TEMPERATURE ELECTROSTATIC CHUCKING WITH DIELECTRIC CONSTANT ENGINEERED IN-SITU CHARGE TRAP MATERIALS 审中-公开
Title translation: 具有介电常数工程原位充电材料的高温静电切割

公开(公告)号：US20160064264A1

公开(公告)日：2016-03-03

申请号：US14469573

申请日：2014-08-26

Applicant: Applied Materials, Inc.

Inventor： Prashant KULSHRESHTHA , Kwangduk Douglas LEE , Bok Hoen KIM , Zheng John YE , Swayambhu Prasad BEHERA , Ganesh BALASUBRAMANIAN , Juan Carlos ROCHA-ALVAREZ , Jian J. CHEN

IPC: H01L21/683 , H01L21/02

CPC classification number: H01L21/6833

Abstract: Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.

Abstract translation: 公开了用于增加击穿电压的方法和装置的技术，同时在处理室中超过约300摄氏度的温度下显着降低静电卡盘的电压泄漏。

2.

发明申请
HIGH TEMPERATURE ELECTROSTATIC CHUCKING WITH DIELECTRIC CONSTANT ENGINEERED IN-SITU CHARGE TRAP MATERIALS 审中-公开

公开(公告)号：US20190355609A1

公开(公告)日：2019-11-21

申请号：US16440513

申请日：2019-06-13

Applicant: Applied Materials, Inc.

Inventor： Prashant KULSHRESHTHA , Kwangduk Douglas LEE , Bok Hoen KIM , Zheng John YE , Swayambhu Prasad BEHERA , Ganesh BALASUBRAMANIAN , Juan Carlos ROCHA-ALVAREZ , Jian J. CHEN

IPC: H01L21/683

Abstract: Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.

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