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    TREATMENT METHODS FOR SILICON NITRIDE THIN FILMS
    1.
    发明申请
    TREATMENT METHODS FOR SILICON NITRIDE THIN FILMS 审中-公开

    公开(公告)号：US20190233940A1

    公开(公告)日：2019-08-01

    申请号：US16256670

    申请日：2019-01-24

    申请人： Applied Materials, Inc.

    发明人： Jinrui GUO ,  Jingmei LIANG ,  Praket P. JHA ,  Tejasvi ASHOK ,  Tza-Jing GUNG

    IPC分类号： C23C16/452 ,  C23C16/34 ,  H01L21/02

    CPC分类号： C23C16/452 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02337

    摘要： Embodiments herein provide for radical based treatment of silicon nitride layers deposited using a flowable chemical vapor deposition (FCVD) process. Radical based treatment of the FCVD deposited silicon nitride layers desirably increases the number of stable Si—N bonds therein, removes undesirably hydrogen impurities therefrom, and desirably provides for further crosslinking, densification, and nitridation (nitrogen incorporation) in the resulting silicon nitride layer. In one embodiment, a method of forming a silicon nitride layer includes positioning a substrate on a substrate support disposed in the processing volume of a processing chamber and treating a silicon nitride layer deposited on the substrate. Treating the silicon nitride layer includes flowing one or more radical species of a first gas comprising NH3, N2, H2, Ar, He, or combinations thereof and exposing a silicon nitride layer to the radical species.

    OXIDE WITH HIGHER UTILIZATION AND LOWER COST
    5.
    发明申请
    OXIDE WITH HIGHER UTILIZATION AND LOWER COST 审中-公开

    公开(公告)号：US20190074176A1

    公开(公告)日：2019-03-07

    申请号：US16120867

    申请日：2018-09-04

    申请人： Applied Materials, Inc.

    发明人： Lei GUO ,  Praket P. JHA ,  Milind GADRE ,  Deenesh PADHI ,  Tza-Jing GUNG

    IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/50

    摘要： Aspects disclosed herein relate to methods of depositing pure silicon oxide on a substrate using Octamethylcyclotetrasiloxane (OMCTS) precursor. In one aspect, the method generally includes positioning a substrate in a processing chamber, introducing an oxygen-containing gas into the processing chamber, introducing OMCTS precursor into the processing chamber, and reacting the oxygen-containing gas and the OMCTS precursor to remove carbon and deposit pure silicon oxide on the substrate.

    METHOD TO ENABLE HIGH TEMPERATURE PROCESSING WITHOUT CHAMBER DRIFTING
    6.
    发明申请
    METHOD TO ENABLE HIGH TEMPERATURE PROCESSING WITHOUT CHAMBER DRIFTING 审中-公开

    公开(公告)号：US20200095677A1

    公开(公告)日：2020-03-26

    申请号：US16464892

    申请日：2017-12-18

    申请人： Applied Materials, Inc.

    发明人： Michael Wenyoung TSIANG ,  Praket P. JHA ,  Deenesh PADHI

    IPC分类号： C23C16/44 ,  H01L21/02 ,  H01J37/32 ,  C23C16/505 ,  C23C16/40 ,  C23C16/24

    摘要： Implementations of the present disclosure provide methods for processing substrates in a processing chamber. In one implementation, the method includes (a) depositing a dielectric layer on a first substrate at a first chamber pressure using a first high-frequency RF power, (b) depositing sequentially a dielectric layer on N substrates subsequent to the first substrate at a second chamber pressure, wherein N is an integral number of 5 to 10, and wherein depositing each substrate of N substrates comprises using a second high-frequency RF power that has a power density of about 0.21 W/cm2 to about 0.35 W/cm2 lower than that of the first high-frequency RF power, (c) performing a chamber cleaning process without the presence of a substrate, and (d) repeating (a) to (c).

    A METHOD AND SYSTEM FOR HIGH TEMPERATURE CLEAN
    7.
    发明申请
    A METHOD AND SYSTEM FOR HIGH TEMPERATURE CLEAN 审中-公开

    公开(公告)号：US20180023193A1

    公开(公告)日：2018-01-25

    申请号：US15654436

    申请日：2017-07-19

    申请人： Applied Materials, Inc.

    发明人： Sanjeev BALUJA ,  Kalyanjit GHOSH ,  Ren-Guan DUAN ,  Mayur G. KULKARNI ,  Gregory SIU ,  Praket P. JHA ,  Deenesh PADHI ,  Lei GUO ,  Wei Min CHAN ,  Ajit BALAKRISHNA

    IPC分类号： C23C16/44

    CPC分类号： C23C16/4405 ,  C23C16/4408 ,  C23C16/45519 ,  H01J37/00

    摘要： Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.

    GATE STACK MATERIALS FOR SEMICONDUCTOR APPLICATIONS FOR LITHOGRAPHIC OVERLAY IMPROVEMENT
    9.
    发明申请
    GATE STACK MATERIALS FOR SEMICONDUCTOR APPLICATIONS FOR LITHOGRAPHIC OVERLAY IMPROVEMENT 有权
    用于层间叠加改进的半导体应用的栅极堆叠材料

    公开(公告)号：US20160203971A1

    公开(公告)日：2016-07-14

    申请号：US14879043

    申请日：2015-10-08

    申请人： Applied Materials, Inc.

    发明人： Michael TSIANG ,  Praket P. JHA ,  Xinhai HAN ,  Nagarajan RAJAGOPALAN ,  Bok Hoen KIM ,  Tsutomu KIYOHARA ,  Subbalakshmi SREEKALA

    IPC分类号： H01L21/02 ,  H01L27/115

    CPC分类号： H01L21/0217 ,  H01L21/02274 ,  H01L27/11582

    摘要： Embodiments of the disclosure provide methods and system for manufacturing film layers with minimum lithographic overlay errors on a semiconductor substrate. In one embodiment, a method for forming a film layer on a substrate includes supplying a deposition gas mixture including a silicon containing gas and a reacting gas onto a substrate disposed on a substrate support in a processing chamber, forming a plasma in the presence of the depositing gas mixture in the processing chamber, applying current to a plasma profile modulator disposed in the processing chamber while supplying the depositing gas mixture into the processing chamber, and rotating the substrate while depositing a film layer on the substrate.

    摘要翻译： 本公开的实施例提供了在半导体衬底上制造具有最小光刻重叠误差的膜层的方法和系统。 在一个实施例中，用于在衬底上形成膜层的方法包括将包含含硅气体和反应气体的沉积气体混合物供给到设置在处理室中的衬底支撑体上的衬底上，在存在 在处理室中沉积气体混合物，将电流施加到设置在处理室中的等离子体轮廓调制器，同时将沉积气体混合物供应到处理室中，并且在衬底上沉积膜层的同时旋转衬底。