公开(公告)号：US20190229128A1

公开(公告)日：2019-07-25

申请号：US16267151

申请日：2019-02-04

申请人： Applied Materials, Inc.

发明人： Michael Wenyoung TSIANG ,  Praket P. JHA ,  Xinhai HAN ,  Bok Hoen KIM ,  Sang Hyuk KIM ,  Myung Hun JU ,  Hyung Jin PARK ,  Ryeun Kwan KIM ,  Jin Chul SON ,  Saiprasanna GNANAVELU ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Majid K. SHAHREZA ,  Jason K. FOSTER

IPC分类号： H01L27/11582 ,  C23C16/455 ,  C23C16/40 ,  H01L29/06 ,  C23C16/505 ,  C23C16/52 ,  C23C16/02 ,  H01L21/02 ,  H01L21/3115 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11548 ,  H01L21/768

CPC分类号： H01L27/11582 ,  C23C16/0272 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/3115 ,  H01L21/76801 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11575 ,  H01L29/06

摘要： Embodiments of the present disclosure generally relate to an improved method for forming a dielectric film stack used for inter-level dielectric (ILD) layers in a 3D NAND structure. In one embodiment, the method comprises providing a substrate having a gate stack deposited thereon, forming on exposed surfaces of the gate stack a first oxide layer using a first RF power and a first process gas comprising a TEOS gas and a first oxygen-containing gas, and forming over the first oxide layer a second oxide layer using a second RF power and a second process gas comprising a silane gas and a second oxygen-containing gas.

公开(公告)号：US20160293609A1

公开(公告)日：2016-10-06

申请号：US15063569

申请日：2016-03-08

申请人： Applied Materials, Inc.

发明人： Praket P. JHA ,  Allen KO ,  Xinhai HAN ,  Thomas Jongwan KWON ,  Bok Hoen KIM ,  Byung Ho KIL ,  Ryeun KIM ,  Sang Hyuk KIM

IPC分类号： H01L27/115 ,  H01L21/311 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  H01L29/423 ,  H01L21/02

CPC分类号： C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31116 ,  H01L27/11556 ,  H01L27/11582

摘要： Implementations of the present disclosure generally relate to thin films incorporating high aspect ratio feature definitions and methods for forming the same. As gate height increases, 3D NAND gate stacks are subject to higher aspect ratio etching. Due to the current limitations of etching techniques, the vertical etch profile typically tapers as the depth into the gate stack increases. The inventors have devised a unique deposition scheme that compensates for etch performance degradation in deep trenches by a novel plasma-enhanced chemical vapor deposition (PECVD) film deposition method. The inventors have found that by grading various properties (e.g., refractive index, stress of the film, dopant concentration in the film) of the as-deposited films (e.g., silicon nitride) a more uniform etch profile can be achieved by compensating for variations in both dry and wet etch rates.

摘要翻译： 本公开的实施方式一般涉及包含高纵横比特征定义的薄膜及其形成方法。 随着栅极高度的增加，3D NAND栅极堆叠受到更高的纵横比蚀刻。 由于蚀刻技术的当前局限性，垂直蚀刻轮廓通常随着进入栅极堆叠的深度而增加。 本发明人设计了一种独特的沉积方案，其通过新颖的等离子体增强化学气相沉积（PECVD）膜沉积方法来补偿深沟槽中的蚀刻性能降低。 本发明人已经发现，通过分级沉积膜（例如，氮化硅）的各种性质（例如，折射率，膜的应力，膜中的掺杂剂浓度），可以通过补偿变化来实现更均匀的蚀刻轮廓 干和湿蚀刻速率。

公开(公告)号：US20190185996A1

公开(公告)日：2019-06-20

申请号：US16269337

申请日：2019-02-06

申请人： Applied Materials, Inc.

发明人： Praket P. JHA ,  Allen KO ,  Xinhai HAN ,  Thomas Jongwan KWON ,  Bok Hoen KIM ,  Byung Ho KIL ,  Ryeun KIM ,  Sang Hyuk KIM

IPC分类号： C23C16/34 ,  H01L21/02 ,  H01L21/311 ,  C23C16/455 ,  C23C16/40

CPC分类号： C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31116 ,  H01L27/11556 ,  H01L27/11582

摘要： The present disclosure generally relate to thin films incorporating high aspect ratio feature definitions and methods for forming the same. As gate height increases, 3D NAND gate stacks are subject to higher aspect ratio etching. Due to the current limitations of etching techniques, the vertical etch profile typically tapers as the depth into the gate stack increases. The inventors have devised a unique deposition scheme that compensates for etch performance degradation in deep trenches by a novel plasma-enhanced chemical vapor deposition (PECVD) film deposition method. The inventors have found that by grading various properties (e.g., refractive index, stress of the film, dopant concentration in the film) of the as-deposited films (e.g., silicon nitride) a more uniform etch profile can be achieved by compensating for variations in both dry and wet etch rates.

公开(公告)号：US20170062469A1

公开(公告)日：2017-03-02

申请号：US15214104

申请日：2016-07-19

申请人： Applied Materials, Inc.

发明人： Michael Wenyoung TSIANG ,  Praket P. JHA ,  Xinhai HAN ,  Bok Hoen KIM ,  Sang Hyuk KIM ,  Myung Hun JU ,  Hyung Jin PARK ,  Ryeun Kwan KIM ,  Jin Chul SON ,  Saiprasanna GNANAVELU ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Majid K. SHAHREZA ,  Jason K. FOSTER

IPC分类号： H01L27/115 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/423 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/28 ,  H01L21/324

CPC分类号： H01L27/11582 ,  C23C16/0272 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/3115 ,  H01L21/76801 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11575 ,  H01L29/06

摘要： Embodiments of the present disclosure generally relate to an improved method for forming a dielectric film stack used for inter-level dielectric (ILD) layers in a 3D NAND structure. In one embodiment, the method comprises providing a substrate having a gate stack deposited thereon, forming on exposed surfaces of the gate stack a first oxide layer using a first RF power and a first process gas comprising a TEOS gas and a first oxygen-containing gas, and forming over the first oxide layer a second oxide layer using a second RF power and a second process gas comprising a silane gas and a second oxygen-containing gas.

摘要翻译： 本公开的实施例通常涉及用于形成用于3D NAND结构中的层间电介质（ILD）层的电介质膜叠层的改进方法。 在一个实施例中，该方法包括提供其上沉积有栅极叠层的衬底，其中使用第一RF功率在栅极堆叠的暴露表面上形成第一氧化物层，以及第一工艺气体，其包括TEOS气体和第一含氧气体 并且使用第二RF功率在第一氧化物层上形成第二氧化物层，以及包括硅烷气体和第二含氧气体的第二工艺气体。